JP5165914B2 - 多孔質シリカフィルム及びその製造方法 - Google Patents

多孔質シリカフィルム及びその製造方法 Download PDF

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JP5165914B2
JP5165914B2 JP2007090327A JP2007090327A JP5165914B2 JP 5165914 B2 JP5165914 B2 JP 5165914B2 JP 2007090327 A JP2007090327 A JP 2007090327A JP 2007090327 A JP2007090327 A JP 2007090327A JP 5165914 B2 JP5165914 B2 JP 5165914B2
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porous silica
film
silica film
group
alkyl group
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JP2008251774A5 (cg-RX-API-DMAC10.html
JP2008251774A (ja
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一夫 高村
博文 田中
雅美 村上
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Mitsui Chemicals Inc
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Mitsui Chemicals Inc
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  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2007090327A 2007-03-30 2007-03-30 多孔質シリカフィルム及びその製造方法 Active JP5165914B2 (ja)

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JP2007090327A JP5165914B2 (ja) 2007-03-30 2007-03-30 多孔質シリカフィルム及びその製造方法

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JP2008251774A JP2008251774A (ja) 2008-10-16
JP2008251774A5 JP2008251774A5 (cg-RX-API-DMAC10.html) 2010-04-30
JP5165914B2 true JP5165914B2 (ja) 2013-03-21

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Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
JP5603586B2 (ja) * 2009-11-06 2014-10-08 旭化成イーマテリアルズ株式会社 トレンチ埋め込み用絶縁膜の形成方法
JP5999593B2 (ja) * 2012-05-22 2016-09-28 国立大学法人広島大学 シリカゼオライト絶縁膜の製造方法
KR102684626B1 (ko) * 2017-09-11 2024-07-15 도쿄엘렉트론가부시키가이샤 절연막의 성막 방법, 기판 처리 장치 및 기판 처리 시스템
CN117439567A (zh) * 2023-11-02 2024-01-23 上海新硅聚合半导体有限公司 异质衬底结构及其制备方法、声表面波器件

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JPH08236518A (ja) * 1995-02-28 1996-09-13 Hitachi Ltd シリコン酸化膜の形成方法
JP4028032B2 (ja) * 1997-07-25 2007-12-26 日本テキサス・インスツルメンツ株式会社 半導体装置及びその製造方法
JP4040255B2 (ja) * 1998-12-23 2008-01-30 バトル・メモリアル・インスティチュート 界面活性剤を含む溶剤から調製するメソポーラスシリカ薄膜及びその製造方法
US6768200B2 (en) * 2000-10-25 2004-07-27 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device
WO2002043119A2 (en) * 2000-10-25 2002-05-30 International Business Machines Corporation An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same
TWI240959B (en) * 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
JP2005133060A (ja) * 2003-10-29 2005-05-26 Rohm & Haas Electronic Materials Llc 多孔性材料
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
TWI323244B (en) * 2005-08-12 2010-04-11 Mitsui Chemicals Inc Method for producing porous silica and apparatus for producing thereof

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