JP5165868B2 - 誘電膜上のパッシベーション膜と共に金属−絶縁体−金属キャパシタ（ｍｅｔａｌ−ｉｎｓｕｌａｔｏｒ−ｍｅｔａｌｍｉｍｃａｐａｃｉｔｏｒｓ）を形成する方法 - Google Patents

誘電膜上のパッシベーション膜と共に金属−絶縁体−金属キャパシタ（ｍｅｔａｌ−ｉｎｓｕｌａｔｏｒ−ｍｅｔａｌｍｉｍｃａｐａｃｉｔｏｒｓ）を形成する方法 Download PDF

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JP5165868B2
JP5165868B2 JP2006208185A JP2006208185A JP5165868B2 JP 5165868 B2 JP5165868 B2 JP 5165868B2 JP 2006208185 A JP2006208185 A JP 2006208185A JP 2006208185 A JP2006208185 A JP 2006208185A JP 5165868 B2 JP5165868 B2 JP 5165868B2
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film
forming
insulating film
photoresist pattern
capping insulating
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JP2007049139A (ja
JP2007049139A5 (enExample
Inventor
鐘 采 金
悳 ▲びん▼ 李
相 日 鄭
鍾 郁 洪
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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JP2006208185A 2005-08-10 2006-07-31 誘電膜上のパッシベーション膜と共に金属−絶縁体−金属キャパシタ（ｍｅｔａｌ−ｉｎｓｕｌａｔｏｒ−ｍｅｔａｌｍｉｍｃａｐａｃｉｔｏｒｓ）を形成する方法 Expired - Fee Related JP5165868B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020050073498A KR100870178B1 (ko) 2005-08-10 2005-08-10 엠아이엠 커패시터를 구비하는 반도체 소자들 및 그제조방법들
KR10-2005-0073498 2005-08-10
US11/413,282 2006-04-28
US11/413,282 US7749852B2 (en) 2005-08-10 2006-04-28 Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers

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JP2007049139A JP2007049139A (ja) 2007-02-22
JP2007049139A5 JP2007049139A5 (enExample) 2009-09-10
JP5165868B2 true JP5165868B2 (ja) 2013-03-21

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JP2006208185A Expired - Fee Related JP5165868B2 (ja) 2005-08-10 2006-07-31 誘電膜上のパッシベーション膜と共に金属−絶縁体−金属キャパシタ（ｍｅｔａｌ−ｉｎｓｕｌａｔｏｒ−ｍｅｔａｌｍｉｍｃａｐａｃｉｔｏｒｓ）を形成する方法

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Publication number Priority date Publication date Assignee Title
JP6149578B2 (ja) * 2013-07-30 2017-06-21 富士通セミコンダクター株式会社 電子デバイスの製造方法
JP7272098B2 (ja) * 2019-05-09 2023-05-12 富士通セミコンダクターメモリソリューション株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3415551B2 (ja) * 2000-03-27 2003-06-09 日本電気株式会社 半導体装置の製造方法
JP3956118B2 (ja) * 2002-07-23 2007-08-08 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体装置の製造方法及びその半導体装置
JP4037711B2 (ja) * 2002-07-26 2008-01-23 株式会社東芝 層間絶縁膜内に形成されたキャパシタを有する半導体装置
KR100505682B1 (ko) * 2003-04-03 2005-08-03 삼성전자주식회사 금속-절연체-금속 커패시터를 포함하는 이중 다마신 배선구조 및 그 제조방법
KR100532455B1 (ko) * 2003-07-29 2005-11-30 삼성전자주식회사 Ｍｉｍ 커패시터 및 배선 구조를 포함하는 반도체 장치의제조 방법
JP2005079513A (ja) * 2003-09-03 2005-03-24 Seiko Epson Corp 半導体装置及びその製造方法

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