JP5159005B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5159005B2
JP5159005B2 JP2001011031A JP2001011031A JP5159005B2 JP 5159005 B2 JP5159005 B2 JP 5159005B2 JP 2001011031 A JP2001011031 A JP 2001011031A JP 2001011031 A JP2001011031 A JP 2001011031A JP 5159005 B2 JP5159005 B2 JP 5159005B2
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Prior art keywords
film
semiconductor layer
layer
concentration
tft
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Expired - Fee Related
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JP2001011031A
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Japanese (ja)
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JP2001274412A (ja
JP2001274412A5 (cg-RX-API-DMAC7.html
Inventor
舜平 山崎
久 大谷
英人 大沼
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001011031A priority Critical patent/JP5159005B2/ja
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Publication of JP2001274412A5 publication Critical patent/JP2001274412A5/ja
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JP2001011031A 2000-01-20 2001-01-19 半導体装置の作製方法 Expired - Fee Related JP5159005B2 (ja)

Priority Applications (1)

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JP2001011031A JP5159005B2 (ja) 2000-01-20 2001-01-19 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000012148 2000-01-20
JP2000012148 2000-01-20
JP2000-12148 2000-01-20
JP2001011031A JP5159005B2 (ja) 2000-01-20 2001-01-19 半導体装置の作製方法

Publications (3)

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JP2001274412A JP2001274412A (ja) 2001-10-05
JP2001274412A5 JP2001274412A5 (cg-RX-API-DMAC7.html) 2008-01-17
JP5159005B2 true JP5159005B2 (ja) 2013-03-06

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JP2001011031A Expired - Fee Related JP5159005B2 (ja) 2000-01-20 2001-01-19 半導体装置の作製方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102679509B1 (ko) * 2012-09-13 2024-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6812962B2 (ja) * 2017-12-26 2021-01-13 株式会社Sumco エピタキシャルシリコンウェーハの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126921A (ja) * 1989-10-12 1991-05-30 Sony Corp 液晶表示装置
JP3512550B2 (ja) * 1995-01-30 2004-03-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH1140811A (ja) * 1997-07-22 1999-02-12 Hitachi Ltd 半導体装置およびその製造方法
JPH11111634A (ja) * 1997-10-02 1999-04-23 Ishikawajima Harima Heavy Ind Co Ltd Ｎ型半導体膜の形成方法
JP3586558B2 (ja) * 1998-04-17 2004-11-10 日本電気株式会社 薄膜の改質方法及びその実施に使用する装置
JP4089843B2 (ja) * 1998-05-26 2008-05-28 カシオ計算機株式会社 液晶表示装置

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JP2001274412A (ja) 2001-10-05

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