JP5147669B2 - 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子の製造方法および窒化物半導体発光素子 Download PDFInfo
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- JP5147669B2 JP5147669B2 JP2008315792A JP2008315792A JP5147669B2 JP 5147669 B2 JP5147669 B2 JP 5147669B2 JP 2008315792 A JP2008315792 A JP 2008315792A JP 2008315792 A JP2008315792 A JP 2008315792A JP 5147669 B2 JP5147669 B2 JP 5147669B2
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- electrode
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- nitride semiconductor
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- semiconductor light
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- 239000004065 semiconductor Substances 0.000 title claims description 102
- 150000004767 nitrides Chemical class 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000003776 cleavage reaction Methods 0.000 claims description 41
- 230000007017 scission Effects 0.000 claims description 41
- 238000002955 isolation Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 21
- 239000007789 gas Substances 0.000 description 21
- 238000005253 cladding Methods 0.000 description 16
- 239000011810 insulating material Substances 0.000 description 14
- 239000000470 constituent Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008315792A JP5147669B2 (ja) | 2008-12-11 | 2008-12-11 | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008315792A JP5147669B2 (ja) | 2008-12-11 | 2008-12-11 | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010141116A JP2010141116A (ja) | 2010-06-24 |
| JP2010141116A5 JP2010141116A5 (https=) | 2012-01-05 |
| JP5147669B2 true JP5147669B2 (ja) | 2013-02-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008315792A Expired - Fee Related JP5147669B2 (ja) | 2008-12-11 | 2008-12-11 | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5147669B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250112439A1 (en) * | 2022-01-27 | 2025-04-03 | Kyocera Corporation | Manufacturing method and manufacturing apparatus for laser element, laser element, and electronic device |
| WO2023219132A1 (ja) * | 2022-05-13 | 2023-11-16 | ヌヴォトンテクノロジージャパン株式会社 | 半導体レーザ素子及び半導体レーザ素子の製造方法 |
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- 2008-12-11 JP JP2008315792A patent/JP5147669B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2010141116A (ja) | 2010-06-24 |
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