JP2010141116A5 - - Google Patents
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- Publication number
- JP2010141116A5 JP2010141116A5 JP2008315792A JP2008315792A JP2010141116A5 JP 2010141116 A5 JP2010141116 A5 JP 2010141116A5 JP 2008315792 A JP2008315792 A JP 2008315792A JP 2008315792 A JP2008315792 A JP 2008315792A JP 2010141116 A5 JP2010141116 A5 JP 2010141116A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- forming
- isolation groove
- element isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000002955 isolation Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 238000003776 cleavage reaction Methods 0.000 claims description 20
- 230000007017 scission Effects 0.000 claims description 20
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008315792A JP5147669B2 (ja) | 2008-12-11 | 2008-12-11 | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008315792A JP5147669B2 (ja) | 2008-12-11 | 2008-12-11 | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010141116A JP2010141116A (ja) | 2010-06-24 |
| JP2010141116A5 true JP2010141116A5 (https=) | 2012-01-05 |
| JP5147669B2 JP5147669B2 (ja) | 2013-02-20 |
Family
ID=42350988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008315792A Expired - Fee Related JP5147669B2 (ja) | 2008-12-11 | 2008-12-11 | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5147669B2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250112439A1 (en) * | 2022-01-27 | 2025-04-03 | Kyocera Corporation | Manufacturing method and manufacturing apparatus for laser element, laser element, and electronic device |
| WO2023219132A1 (ja) * | 2022-05-13 | 2023-11-16 | ヌヴォトンテクノロジージャパン株式会社 | 半導体レーザ素子及び半導体レーザ素子の製造方法 |
-
2008
- 2008-12-11 JP JP2008315792A patent/JP5147669B2/ja not_active Expired - Fee Related
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