JP5145528B2 - 二重目的電極を備えるシールドされたｃｍｏｓ画素構造 - Google Patents

二重目的電極を備えるシールドされたｃｍｏｓ画素構造 Download PDF

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Publication number
JP5145528B2
JP5145528B2 JP2000380105A JP2000380105A JP5145528B2 JP 5145528 B2 JP5145528 B2 JP 5145528B2 JP 2000380105 A JP2000380105 A JP 2000380105A JP 2000380105 A JP2000380105 A JP 2000380105A JP 5145528 B2 JP5145528 B2 JP 5145528B2
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region
collection
pixel structure
semiconductor substrate
conductivity type
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Expired - Lifetime
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JP2000380105A
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Japanese (ja)
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JP2001237407A (ja
JP2001237407A5 (enExample
Inventor
バート・ディーリクス
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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Priority claimed from US09/460,630 external-priority patent/US6815791B1/en
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Publication of JP2001237407A5 publication Critical patent/JP2001237407A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies

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  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2000380105A 1999-12-14 2000-12-14 二重目的電極を備えるシールドされたｃｍｏｓ画素構造 Expired - Lifetime JP5145528B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/460,630 US6815791B1 (en) 1997-02-10 1999-12-14 Buried, fully depletable, high fill factor photodiodes
US09/460630 1999-12-14

Publications (3)

Publication Number Publication Date
JP2001237407A JP2001237407A (ja) 2001-08-31
JP2001237407A5 JP2001237407A5 (enExample) 2008-05-29
JP5145528B2 true JP5145528B2 (ja) 2013-02-20

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JP2000380105A Expired - Lifetime JP5145528B2 (ja) 1999-12-14 2000-12-14 二重目的電極を備えるシールドされたｃｍｏｓ画素構造

Country Status (2)

Country Link
EP (1) EP1109229A3 (enExample)
JP (1) JP5145528B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545303B1 (en) * 2001-11-06 2003-04-08 Fillfactory Method to increase conversion gain of an active pixel, and corresponding active pixel
US6462365B1 (en) 2001-11-06 2002-10-08 Omnivision Technologies, Inc. Active pixel having reduced dark current in a CMOS image sensor
WO2004061965A1 (ja) * 2003-01-06 2004-07-22 Takeharu Etoh 裏面照射型撮像素子
US7541627B2 (en) 2004-03-08 2009-06-02 Foveon, Inc. Method and apparatus for improving sensitivity in vertical color CMOS image sensors
DE102004053077B4 (de) * 2004-11-03 2006-11-02 X-Fab Semiconductor Foundries Ag Vertikale PIN-Fotodiode und Verfahren zur Herstellung, kompatibel zu einem konventionellen CMOS-Prozess
JP4859045B2 (ja) * 2006-09-06 2012-01-18 シャープ株式会社 固体撮像素子および電子情報機器
CN108257996A (zh) * 2017-12-07 2018-07-06 德淮半导体有限公司 像素单元及其制造方法以及成像装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
US5196719A (en) * 1990-05-14 1993-03-23 Nec Corporation Solid-state image pick-up device having electric field for accelerating electric charges from photoelectric converting region to shift register
KR0136934B1 (ko) * 1994-02-23 1998-04-24 문정환 선형 고체영상소자
JPH08250697A (ja) * 1995-03-10 1996-09-27 Sharp Corp 増幅型光電変換素子及びそれを用いた増幅型固体撮像装置
US5625210A (en) * 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
JP2848268B2 (ja) * 1995-04-20 1999-01-20 日本電気株式会社 固体撮像装置およびその製造方法
JP3919243B2 (ja) * 1995-08-23 2007-05-23 キヤノン株式会社 光電変換装置
JPH10150180A (ja) * 1996-11-15 1998-06-02 Toshiba Corp 固体撮像装置
EP0858111B1 (en) * 1997-02-10 2010-07-07 Cypress Semiconductor Corporation (Belgium) BVBA A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector
JP3455655B2 (ja) * 1997-03-03 2003-10-14 株式会社東芝 固体撮像装置および固体撮像装置応用システム
US5898168A (en) * 1997-06-12 1999-04-27 International Business Machines Corporation Image sensor pixel circuit
JPH1126741A (ja) * 1997-07-04 1999-01-29 Toshiba Corp 固体撮像装置
US6026964A (en) * 1997-08-25 2000-02-22 International Business Machines Corporation Active pixel sensor cell and method of using
US5898196A (en) * 1997-10-10 1999-04-27 International Business Machines Corporation Dual EPI active pixel cell design and method of making the same
JP3403061B2 (ja) * 1998-03-31 2003-05-06 株式会社東芝 固体撮像装置

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JP2001237407A (ja) 2001-08-31
EP1109229A3 (en) 2008-03-26
EP1109229A2 (en) 2001-06-20

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