JP5136253B2 - シリコン単結晶の育成方法 - Google Patents
シリコン単結晶の育成方法 Download PDFInfo
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- JP5136253B2 JP5136253B2 JP2008181669A JP2008181669A JP5136253B2 JP 5136253 B2 JP5136253 B2 JP 5136253B2 JP 2008181669 A JP2008181669 A JP 2008181669A JP 2008181669 A JP2008181669 A JP 2008181669A JP 5136253 B2 JP5136253 B2 JP 5136253B2
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- 239000013078 crystal Substances 0.000 title claims description 123
- 229910052710 silicon Inorganic materials 0.000 title claims description 108
- 239000010703 silicon Substances 0.000 title claims description 108
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 106
- 238000000034 method Methods 0.000 title claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 128
- 239000010453 quartz Substances 0.000 claims description 110
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 61
- 229910052799 carbon Inorganic materials 0.000 claims description 48
- 229910052782 aluminium Inorganic materials 0.000 claims description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 38
- 238000002109 crystal growth method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 58
- 125000004429 atom Chemical group 0.000 description 16
- 239000002994 raw material Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000008710 crystal-8 Substances 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
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- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- 239000002019 doping agent Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/52—Improvements relating to the production of bulk chemicals using catalysts, e.g. selective catalysts
Description
(a)炭素ドープ単結晶育成と炭素ドープなしの単結晶育成では、前者の炭素ドープ単結晶育成において有転位化が発生しやすく、単結晶引き上げ歩留まりが低下する。
(b)石英ルツボのアルミニウム濃度が、炭素ドープ単結晶育成における有転位化発生に大きな影響を与える因子である。
(c)シリコン溶融液の炭素濃度が高くなるとともに有転位化の発生率が高くなる。単結晶成長過程における偏析によりシリコン溶融液の炭素濃度が徐々に高くなるので、特に単結晶育成の後半において有転位化し易い。
前記図1に示した概略構成を有する単結晶育成装置により、内径18インチ、22インチまたは32インチの石英ルツボを使用して、それぞれ、直径150mm(6インチ)、直径200mm(8インチ)または直径300mm(12インチ)のシリコン単結晶(いずれもn型で、直胴部長さは1100mm)を育成した。
前記図1に示した概略構成を有する単結晶育成装置により、内径22インチの石英ルツボを使用して、直径200mm(8インチ)のシリコン単結晶(いずれもn型で、直胴部長さは1100mm)を育成した。
3:断熱材、 4:支持軸、 5:溶融液、
6:引上げワイヤー、 7:種結晶、 8:単結晶、
9:ネック部、 10:コーン、
11:肩部、 12:直胴部(ボディ部)
Claims (3)
- 石英ルツボ内に収容され、炭素が添加されたシリコン溶融液からチョクラルスキー法によりシリコン単結晶を育成する方法であって、
内表面側にアルミニウム濃度が0.1ppm以下のアルミニウム低濃度層を有する石英ルツボを用いて、炭素が添加されたシリコン単結晶を育成することを特徴とするシリコン単結晶の育成方法。 - 前記石英ルツボは、直胴円筒部と該直胴円筒部の下方に繋がる底部からなり、該直胴円筒部および底部の内表面、または該底部の内表面が前記アルミニウム低濃度層で構成されることを特徴とする請求項1に記載のシリコン単結晶の育成方法。
- 引き上げられるシリコン単結晶の炭素濃度を0.5×1016atoms/cm3〜15×1016atoms/cm3の範囲に制御することを特徴とする請求項1または請求項2に記載のシリコン単結晶の育成方法。
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JP2010018500A JP2010018500A (ja) | 2010-01-28 |
JP5136253B2 true JP5136253B2 (ja) | 2013-02-06 |
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Families Citing this family (1)
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JP5656414B2 (ja) | 2010-01-29 | 2015-01-21 | キヤノン株式会社 | 眼科像撮像装置及び眼科像撮像方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3195889B2 (ja) * | 1994-07-06 | 2001-08-06 | 信越半導体株式会社 | シリコン単結晶の製造方法及び石英ガラスルツボ |
JPH10182287A (ja) * | 1996-12-19 | 1998-07-07 | Nippon Steel Corp | シリコン単結晶製造方法および石英ルツボ |
JP4688984B2 (ja) * | 1997-12-26 | 2011-05-25 | 株式会社Sumco | シリコンウエーハ及び結晶育成方法 |
JP2005060151A (ja) * | 2003-08-08 | 2005-03-10 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法及びシリコン単結晶ウェーハ |
JP2005060153A (ja) * | 2003-08-08 | 2005-03-10 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法及びシリコン単結晶ウェーハ |
JP4803784B2 (ja) * | 2004-06-30 | 2011-10-26 | 信越石英株式会社 | シリコン単結晶引上げ用石英ガラスルツボの製造方法 |
JP4604889B2 (ja) * | 2005-05-25 | 2011-01-05 | 株式会社Sumco | シリコンウェーハの製造方法、並びにシリコン単結晶育成方法 |
JP4807130B2 (ja) * | 2006-04-04 | 2011-11-02 | 株式会社Sumco | シリコン単結晶の引上げ方法 |
JP4788445B2 (ja) * | 2006-04-04 | 2011-10-05 | 株式会社Sumco | シリコン単結晶の引上げ方法 |
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