JP5128172B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5128172B2
JP5128172B2 JP2007116407A JP2007116407A JP5128172B2 JP 5128172 B2 JP5128172 B2 JP 5128172B2 JP 2007116407 A JP2007116407 A JP 2007116407A JP 2007116407 A JP2007116407 A JP 2007116407A JP 5128172 B2 JP5128172 B2 JP 5128172B2
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layer
insulating layer
semiconductor
semiconductor layer
insulating
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JP2007116407A
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Japanese (ja)
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JP2008103666A (ja
JP2008103666A5 (enrdf_load_stackoverflow
Inventor
舜平 山崎
幸恵 鈴木
康行 荒井
芳隆 守屋
佳寿子 池田
好文 棚田
修平 高橋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007116407A priority Critical patent/JP5128172B2/ja
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Publication of JP2008103666A5 publication Critical patent/JP2008103666A5/ja
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JP2007116407A 2006-04-28 2007-04-26 半導体装置の作製方法 Expired - Fee Related JP5128172B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007116407A JP5128172B2 (ja) 2006-04-28 2007-04-26 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2006126670 2006-04-28
JP2006126670 2006-04-28
JP2006254205 2006-09-20
JP2006254205 2006-09-20
JP2007116407A JP5128172B2 (ja) 2006-04-28 2007-04-26 半導体装置の作製方法

Publications (3)

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JP2008103666A JP2008103666A (ja) 2008-05-01
JP2008103666A5 JP2008103666A5 (enrdf_load_stackoverflow) 2010-05-20
JP5128172B2 true JP5128172B2 (ja) 2013-01-23

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JP2007116407A Expired - Fee Related JP5128172B2 (ja) 2006-04-28 2007-04-26 半導体装置の作製方法

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010098054A (ja) * 2008-10-15 2010-04-30 Sharp Corp メモリ素子、半導体記憶装置、表示装置、および携帯電子機器
JP5558695B2 (ja) * 2008-11-18 2014-07-23 株式会社東芝 不揮発性半導体記憶装置
JP4902716B2 (ja) * 2008-11-20 2012-03-21 株式会社日立国際電気 不揮発性半導体記憶装置およびその製造方法
WO2011132590A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI570809B (zh) * 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI787452B (zh) 2011-01-26 2022-12-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI570920B (zh) 2011-01-26 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2012128030A1 (en) 2011-03-18 2012-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
TWI565067B (zh) 2011-07-08 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2019220530A (ja) * 2018-06-18 2019-12-26 株式会社ジャパンディスプレイ 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188387A (ja) * 2001-12-20 2003-07-04 Sony Corp 薄膜トランジスタ及びその製造方法
TWI225668B (en) * 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
WO2006025363A1 (ja) * 2004-08-31 2006-03-09 Tokyo Electron Limited シリコン酸化膜の形成方法、半導体装置の製造方法およびコンピュータ記憶媒体

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JP2008103666A (ja) 2008-05-01

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