JP5122057B2 - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法 Download PDF

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Publication number
JP5122057B2
JP5122057B2 JP2003123500A JP2003123500A JP5122057B2 JP 5122057 B2 JP5122057 B2 JP 5122057B2 JP 2003123500 A JP2003123500 A JP 2003123500A JP 2003123500 A JP2003123500 A JP 2003123500A JP 5122057 B2 JP5122057 B2 JP 5122057B2
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Japan
Prior art keywords
thin film
film
region
crystal
tft
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Expired - Lifetime
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JP2003123500A
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English (en)
Japanese (ja)
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JP2004006849A (ja
JP2004006849A5 (enExample
Inventor
輝 西谷
睦 山本
義尚 武富
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2003123500A priority Critical patent/JP5122057B2/ja
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Publication of JP2004006849A5 publication Critical patent/JP2004006849A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
JP2003123500A 2000-07-24 2003-04-28 薄膜トランジスタの製造方法 Expired - Lifetime JP5122057B2 (ja)

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JP2003123500A JP5122057B2 (ja) 2000-07-24 2003-04-28 薄膜トランジスタの製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000222275 2000-07-24
JP2000222275 2000-07-24
JP2000322301 2000-10-23
JP2000322301 2000-10-23
JP2003123500A JP5122057B2 (ja) 2000-07-24 2003-04-28 薄膜トランジスタの製造方法

Related Parent Applications (1)

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JP2001221823A Division JP3448685B2 (ja) 2000-07-24 2001-07-23 半導体装置、液晶表示装置およびｅｌ表示装置

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JP2004006849A JP2004006849A (ja) 2004-01-08
JP2004006849A5 JP2004006849A5 (enExample) 2008-07-31
JP5122057B2 true JP5122057B2 (ja) 2013-01-16

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101347552B1 (ko) * 2011-07-21 2014-01-10 주식회사 엘지화학 마스크 및 이를 포함하는 광학필터 제조장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0740542B2 (ja) * 1986-09-25 1995-05-01 富士通株式会社 投影露光方法
JPH01116526A (ja) * 1987-10-29 1989-05-09 Toshiba Corp 液晶表示用薄膜トランジスタアレイの製造方法
JPH03250620A (ja) * 1990-02-27 1991-11-08 Mitsubishi Electric Corp 半導体装置の製造方法
JPH03292721A (ja) * 1990-04-10 1991-12-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP3180481B2 (ja) * 1992-11-24 2001-06-25 日新電機株式会社 薄膜トランジスタ用単結晶シリコン層の形成方法
JP3339894B2 (ja) * 1992-12-18 2002-10-28 オリンパス光学工業株式会社 微細パターンの作成方法
JP3048829B2 (ja) * 1994-03-31 2000-06-05 シャープ株式会社 半導体装置の製造方法
JP3346145B2 (ja) * 1996-01-12 2002-11-18 セイコーエプソン株式会社 半導体膜の結晶化方法、薄膜トランジスタの製造方法、アクティブマトリクス基板、アクティブマトリクス基板の製造方法、液晶表示装置及びアニール装置
JP3477969B2 (ja) * 1996-01-12 2003-12-10 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法及び液晶表示装置
JPH1050999A (ja) * 1996-07-30 1998-02-20 Matsushita Electric Works Ltd 半導体装置及びその製造方法
JP3090113B2 (ja) * 1998-02-13 2000-09-18 日本電気株式会社 半導体装置の製造方法
JP4278013B2 (ja) * 1999-03-19 2009-06-10 シャープ株式会社 薄膜素子の製造方法

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