JP5119606B2 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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JP5119606B2
JP5119606B2 JP2006099770A JP2006099770A JP5119606B2 JP 5119606 B2 JP5119606 B2 JP 5119606B2 JP 2006099770 A JP2006099770 A JP 2006099770A JP 2006099770 A JP2006099770 A JP 2006099770A JP 5119606 B2 JP5119606 B2 JP 5119606B2
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film
fluorine
gas
oxygen
sicn
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Expired - Fee Related
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JP2006099770A
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JP2007273873A (ja
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良幸 菊地
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2006099770A priority Critical patent/JP5119606B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN2007800013688A priority patent/CN101356638B/zh
Priority to EP07739885A priority patent/EP2003687A4/en
Priority to KR1020087005618A priority patent/KR100942179B1/ko
Priority to PCT/JP2007/056447 priority patent/WO2007116758A1/ja
Priority to TW096111350A priority patent/TW200805498A/zh
Publication of JP2007273873A publication Critical patent/JP2007273873A/ja
Priority to US12/157,795 priority patent/US7851351B2/en
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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  • Materials Engineering (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2006099770A 2006-03-31 2006-03-31 半導体装置及び半導体装置の製造方法 Expired - Fee Related JP5119606B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006099770A JP5119606B2 (ja) 2006-03-31 2006-03-31 半導体装置及び半導体装置の製造方法
EP07739885A EP2003687A4 (en) 2006-03-31 2007-03-27 SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
KR1020087005618A KR100942179B1 (ko) 2006-03-31 2007-03-27 반도체 장치 및 반도체 장치의 제조 방법
PCT/JP2007/056447 WO2007116758A1 (ja) 2006-03-31 2007-03-27 半導体装置及び半導体装置の製造方法
CN2007800013688A CN101356638B (zh) 2006-03-31 2007-03-27 半导体装置和半导体装置的制造方法
TW096111350A TW200805498A (en) 2006-03-31 2007-03-30 Semiconductor device and manufacturing method therefor
US12/157,795 US7851351B2 (en) 2006-03-31 2008-06-13 Manufacturing method for semiconductor devices with enhanced adhesivity and barrier properties

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JP2006099770A JP5119606B2 (ja) 2006-03-31 2006-03-31 半導体装置及び半導体装置の製造方法

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JP2007273873A JP2007273873A (ja) 2007-10-18
JP5119606B2 true JP5119606B2 (ja) 2013-01-16

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EP (1) EP2003687A4 (enExample)
JP (1) JP5119606B2 (enExample)
KR (1) KR100942179B1 (enExample)
CN (1) CN101356638B (enExample)
TW (1) TW200805498A (enExample)
WO (1) WO2007116758A1 (enExample)

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JP5700513B2 (ja) * 2010-10-08 2015-04-15 国立大学法人東北大学 半導体装置の製造方法および半導体装置
JP5364765B2 (ja) 2011-09-07 2013-12-11 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
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