CN101356638B - 半导体装置和半导体装置的制造方法 - Google Patents
半导体装置和半导体装置的制造方法 Download PDFInfo
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- CN101356638B CN101356638B CN2007800013688A CN200780001368A CN101356638B CN 101356638 B CN101356638 B CN 101356638B CN 2007800013688 A CN2007800013688 A CN 2007800013688A CN 200780001368 A CN200780001368 A CN 200780001368A CN 101356638 B CN101356638 B CN 101356638B
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
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- Materials Engineering (AREA)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006099770A JP5119606B2 (ja) | 2006-03-31 | 2006-03-31 | 半導体装置及び半導体装置の製造方法 |
| JP099770/2006 | 2006-03-31 | ||
| PCT/JP2007/056447 WO2007116758A1 (ja) | 2006-03-31 | 2007-03-27 | 半導体装置及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101356638A CN101356638A (zh) | 2009-01-28 |
| CN101356638B true CN101356638B (zh) | 2010-12-01 |
Family
ID=38581055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800013688A Expired - Fee Related CN101356638B (zh) | 2006-03-31 | 2007-03-27 | 半导体装置和半导体装置的制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2003687A4 (enExample) |
| JP (1) | JP5119606B2 (enExample) |
| KR (1) | KR100942179B1 (enExample) |
| CN (1) | CN101356638B (enExample) |
| TW (1) | TW200805498A (enExample) |
| WO (1) | WO2007116758A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5700513B2 (ja) * | 2010-10-08 | 2015-04-15 | 国立大学法人東北大学 | 半導体装置の製造方法および半導体装置 |
| JP5364765B2 (ja) | 2011-09-07 | 2013-12-11 | 東京エレクトロン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP2013058559A (ja) * | 2011-09-07 | 2013-03-28 | Tokyo Electron Ltd | 半導体装置の製造方法及び基板処理システム |
| JP2014036148A (ja) * | 2012-08-09 | 2014-02-24 | Tokyo Electron Ltd | 多層膜をエッチングする方法、及びプラズマ処理装置 |
| CN102881611B (zh) * | 2012-10-12 | 2015-05-20 | 上海华力微电子有限公司 | 晶圆电性测试的方法 |
| CN104752400B (zh) * | 2013-12-31 | 2019-06-04 | 中芯国际集成电路制造(上海)有限公司 | 互连介质层、其制作方法及包括其的半导体器件 |
| JP6523091B2 (ja) | 2015-07-24 | 2019-05-29 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1182956A (zh) * | 1996-11-08 | 1998-05-27 | 国际商业机器公司 | 导电体与绝缘体之间防止变质的氟阻挡层 |
| US6429518B1 (en) * | 1998-10-05 | 2002-08-06 | Tokyo Electron Ltd. | Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08148562A (ja) * | 1994-11-18 | 1996-06-07 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2000133710A (ja) * | 1998-10-26 | 2000-05-12 | Tokyo Electron Ltd | 半導体装置及びその製造方法 |
| KR100407542B1 (ko) * | 1999-03-09 | 2003-11-28 | 동경 엘렉트론 주식회사 | 반도체 장치 및 그 제조 방법 |
| US6440878B1 (en) * | 2000-04-03 | 2002-08-27 | Sharp Laboratories Of America, Inc. | Method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer |
| JP2002252280A (ja) * | 2001-02-26 | 2002-09-06 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| KR100743745B1 (ko) * | 2004-01-13 | 2007-07-27 | 동경 엘렉트론 주식회사 | 반도체장치의 제조방법 및 성막시스템 |
| JP4194521B2 (ja) | 2004-04-07 | 2008-12-10 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| JP4555143B2 (ja) * | 2004-05-11 | 2010-09-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
-
2006
- 2006-03-31 JP JP2006099770A patent/JP5119606B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-27 KR KR1020087005618A patent/KR100942179B1/ko not_active Expired - Fee Related
- 2007-03-27 EP EP07739885A patent/EP2003687A4/en not_active Withdrawn
- 2007-03-27 CN CN2007800013688A patent/CN101356638B/zh not_active Expired - Fee Related
- 2007-03-27 WO PCT/JP2007/056447 patent/WO2007116758A1/ja not_active Ceased
- 2007-03-30 TW TW096111350A patent/TW200805498A/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1182956A (zh) * | 1996-11-08 | 1998-05-27 | 国际商业机器公司 | 导电体与绝缘体之间防止变质的氟阻挡层 |
| US6429518B1 (en) * | 1998-10-05 | 2002-08-06 | Tokyo Electron Ltd. | Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101356638A (zh) | 2009-01-28 |
| KR100942179B1 (ko) | 2010-02-11 |
| JP5119606B2 (ja) | 2013-01-16 |
| EP2003687A4 (en) | 2011-08-10 |
| JP2007273873A (ja) | 2007-10-18 |
| TWI362703B (enExample) | 2012-04-21 |
| KR20080034503A (ko) | 2008-04-21 |
| EP2003687A1 (en) | 2008-12-17 |
| TW200805498A (en) | 2008-01-16 |
| WO2007116758A1 (ja) | 2007-10-18 |
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