JP5116305B2 - 研磨組成物および基板の研磨方法 - Google Patents

研磨組成物および基板の研磨方法 Download PDF

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Publication number
JP5116305B2
JP5116305B2 JP2006513029A JP2006513029A JP5116305B2 JP 5116305 B2 JP5116305 B2 JP 5116305B2 JP 2006513029 A JP2006513029 A JP 2006513029A JP 2006513029 A JP2006513029 A JP 2006513029A JP 5116305 B2 JP5116305 B2 JP 5116305B2
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JP
Japan
Prior art keywords
polishing
substrate
less
abrasive grains
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006513029A
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English (en)
Japanese (ja)
Other versions
JPWO2005109481A1 (ja
Inventor
宏樹 加藤
裕之 中野
勝之 白井
匡志 寺本
直樹 松本
菊郎 竹本
祥紀 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Nitta DuPont Inc
Original Assignee
Nitta Haas Inc
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc, Sumitomo Electric Industries Ltd filed Critical Nitta Haas Inc
Priority to JP2006513029A priority Critical patent/JP5116305B2/ja
Publication of JPWO2005109481A1 publication Critical patent/JPWO2005109481A1/ja
Application granted granted Critical
Publication of JP5116305B2 publication Critical patent/JP5116305B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2006513029A 2004-05-11 2005-05-10 研磨組成物および基板の研磨方法 Expired - Fee Related JP5116305B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006513029A JP5116305B2 (ja) 2004-05-11 2005-05-10 研磨組成物および基板の研磨方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004141250 2004-05-11
JP2004141250 2004-05-11
JP2006513029A JP5116305B2 (ja) 2004-05-11 2005-05-10 研磨組成物および基板の研磨方法
PCT/JP2005/008518 WO2005109481A1 (ja) 2004-05-11 2005-05-10 研磨組成物および基板の研磨方法

Publications (2)

Publication Number Publication Date
JPWO2005109481A1 JPWO2005109481A1 (ja) 2008-03-21
JP5116305B2 true JP5116305B2 (ja) 2013-01-09

Family

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Family Applications (1)

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JP2006513029A Expired - Fee Related JP5116305B2 (ja) 2004-05-11 2005-05-10 研磨組成物および基板の研磨方法

Country Status (3)

Country Link
JP (1) JP5116305B2 (enExample)
TW (1) TW200609336A (enExample)
WO (1) WO2005109481A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008066355A (ja) * 2006-09-05 2008-03-21 Sumitomo Electric Ind Ltd ３族窒化物基板の製造方法、３族窒化物基板、エピタキシャル層付き３族窒化物基板、３族窒化物デバイス、エピタキシャル層付き３族窒化物基板の製造方法、および３族窒化物デバイスの製造方法。
JP5317531B2 (ja) * 2007-07-10 2013-10-16 パナソニック株式会社 スラリー供給装置の洗浄方法およびスラリー供給装置
CN102341473B (zh) * 2009-03-13 2014-06-18 圣戈本陶瓷及塑料股份有限公司 使用了纳米金刚石的化学机械平面化
JP5589339B2 (ja) * 2009-10-13 2014-09-17 住友電気工業株式会社 基板の研磨方法
JP6078864B2 (ja) * 2011-11-01 2017-02-15 株式会社クリスタル光学 研磨材
JP5900079B2 (ja) * 2012-03-23 2016-04-06 三菱化学株式会社 ポリシングスラリー、及びその製造方法、並びに第１３族窒化物基板の製造方法
JP6185274B2 (ja) * 2013-04-19 2017-08-23 株式会社フジミインコーポレーテッド 磁気ディスク基板用研磨組成物キット
JP6076527B2 (ja) * 2015-03-11 2017-02-08 株式会社Adeka 硬質表面用除菌洗浄剤組成物及び硬質表面用除菌洗浄剤組成物セット
JP6959857B2 (ja) * 2017-12-28 2021-11-05 花王株式会社 研磨液組成物
KR20240029288A (ko) * 2022-08-26 2024-03-05 에스케이엔펄스 주식회사 연마시트의 제조방법 및 이를 이용한 연마패드의 제조방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11263968A (ja) * 1998-03-19 1999-09-28 Nec Kansai Ltd 研磨用スラリ及び研磨方法
WO2000041889A1 (en) * 1999-01-12 2000-07-20 Imperial Chemical Industries Plc Receiver medium for ink jet printing
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP2003347244A (ja) * 2002-05-29 2003-12-05 Mitsubishi Electric Corp 半導体ウエハの研磨方法
FR2843061B1 (fr) * 2002-08-02 2004-09-24 Soitec Silicon On Insulator Procede de polissage de tranche de materiau
JP4322035B2 (ja) * 2003-04-03 2009-08-26 ニッタ・ハース株式会社 半導体基板用研磨組成物及びこれを用いた半導体基板研磨方法

Also Published As

Publication number Publication date
WO2005109481A1 (ja) 2005-11-17
JPWO2005109481A1 (ja) 2008-03-21
TWI374929B (enExample) 2012-10-21
TW200609336A (en) 2006-03-16

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