JP5116203B2 - 真空プラズマプロセッサ及びコイル - Google Patents

真空プラズマプロセッサ及びコイル Download PDF

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Publication number
JP5116203B2
JP5116203B2 JP2002507035A JP2002507035A JP5116203B2 JP 5116203 B2 JP5116203 B2 JP 5116203B2 JP 2002507035 A JP2002507035 A JP 2002507035A JP 2002507035 A JP2002507035 A JP 2002507035A JP 5116203 B2 JP5116203 B2 JP 5116203B2
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Japan
Prior art keywords
coil
windings
winding
sections
common center
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Expired - Fee Related
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JP2002507035A
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English (en)
Japanese (ja)
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JP2004520704A5 (enExample
JP2004520704A (ja
Inventor
ニー トゥチャン
タケシタ ケンジ
チョイ トム
ワイ リン フランク
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Lam Research Corp
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Lam Research Corp
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Publication of JP2004520704A5 publication Critical patent/JP2004520704A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP2002507035A 2000-06-30 2001-06-26 真空プラズマプロセッサ及びコイル Expired - Fee Related JP5116203B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/607,326 US6531029B1 (en) 2000-06-30 2000-06-30 Vacuum plasma processor apparatus and method
US09/607,326 2000-06-30
PCT/US2001/020263 WO2002003763A2 (en) 2000-06-30 2001-06-26 Vacuum plasma processor apparatus and method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011227690A Division JP5538340B2 (ja) 2000-06-30 2011-10-17 ワークピース処理方法および真空プラズマプロセッサ

Publications (3)

Publication Number Publication Date
JP2004520704A JP2004520704A (ja) 2004-07-08
JP2004520704A5 JP2004520704A5 (enExample) 2005-04-07
JP5116203B2 true JP5116203B2 (ja) 2013-01-09

Family

ID=24431792

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2002507035A Expired - Fee Related JP5116203B2 (ja) 2000-06-30 2001-06-26 真空プラズマプロセッサ及びコイル
JP2011227690A Expired - Fee Related JP5538340B2 (ja) 2000-06-30 2011-10-17 ワークピース処理方法および真空プラズマプロセッサ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011227690A Expired - Fee Related JP5538340B2 (ja) 2000-06-30 2011-10-17 ワークピース処理方法および真空プラズマプロセッサ

Country Status (8)

Country Link
US (2) US6531029B1 (enExample)
EP (1) EP1300057B1 (enExample)
JP (2) JP5116203B2 (enExample)
KR (2) KR100807143B1 (enExample)
AU (1) AU2001270163A1 (enExample)
DE (1) DE60128229T2 (enExample)
TW (1) TW515005B (enExample)
WO (1) WO2002003763A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7571697B2 (en) * 2001-09-14 2009-08-11 Lam Research Corporation Plasma processor coil
US6876155B2 (en) * 2002-12-31 2005-04-05 Lam Research Corporation Plasma processor apparatus and method, and antenna
KR100964398B1 (ko) * 2003-01-03 2010-06-17 삼성전자주식회사 유도결합형 안테나 및 이를 채용한 플라즈마 처리장치
US20040261718A1 (en) * 2003-06-26 2004-12-30 Kim Nam Hun Plasma source coil for generating plasma and plasma chamber using the same
US7713432B2 (en) * 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
US20080003377A1 (en) * 2006-06-30 2008-01-03 The Board Of Regents Of The Nevada System Of Higher Ed. On Behalf Of The Unlv Transparent vacuum system
DE102008024014A1 (de) * 2008-05-16 2010-04-15 Ofa Bamberg Gmbh Elektronischer Lebensdauerindikator
US20120103524A1 (en) * 2010-10-28 2012-05-03 Applied Materials, Inc. Plasma processing apparatus with reduced effects of process chamber asymmetry
US20120152900A1 (en) * 2010-12-20 2012-06-21 Applied Materials, Inc. Methods and apparatus for gas delivery into plasma processing chambers
US10777387B2 (en) * 2012-09-28 2020-09-15 Semes Co., Ltd. Apparatus for treating substrate
CN109036817B (zh) * 2017-06-08 2021-09-17 北京北方华创微电子装备有限公司 电感耦合线圈和工艺腔室
JP6909824B2 (ja) * 2019-05-17 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
KR20220107521A (ko) * 2021-01-25 2022-08-02 (주) 엔피홀딩스 반응기, 이를 포함하는 공정 처리 장치 및 반응기 제조 방법
US20250132127A1 (en) * 2021-08-06 2025-04-24 Lam Research Corporation Transformer coupled plasma source design for thin dielectric film deposition
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control
CN116864255A (zh) * 2023-08-14 2023-10-10 北京北方华创微电子装备有限公司 线圈、线圈组件、线圈装置及半导体工艺设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5401350A (en) 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
US5919382A (en) * 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US5838111A (en) 1996-02-27 1998-11-17 Matsushita Electric Industrial Co., Ltd. Plasma generator with antennas attached to top electrodes
CA2207154A1 (en) 1996-06-10 1997-12-10 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5759280A (en) 1996-06-10 1998-06-02 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5800619A (en) 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
US6268700B1 (en) * 1996-06-10 2001-07-31 Lam Research Corporation Vacuum plasma processor having coil with intermediate portion coupling lower magnetic flux density to plasma than center and peripheral portions of the coil
JP3658922B2 (ja) 1997-05-22 2005-06-15 松下電器産業株式会社 プラズマ処理方法及び装置
EP0870576A3 (en) 1997-04-08 2000-10-11 Ebara Corporation Polishing Apparatus
US6028285A (en) 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
JP2972707B1 (ja) * 1998-02-26 1999-11-08 松下電子工業株式会社 プラズマエッチング装置及びプラズマエッチング方法
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6164241A (en) * 1998-06-30 2000-12-26 Lam Research Corporation Multiple coil antenna for inductively-coupled plasma generation systems
KR100291898B1 (ko) * 1999-04-09 2001-06-01 윤종용 스파터 오염원을 감소시키고 플라즈마에 유도 결합을 향상시키기위한 차폐판의 제조방법 및 플라즈마 식각장치
US6319355B1 (en) * 1999-06-30 2001-11-20 Lam Research Corporation Plasma processor with coil responsive to variable amplitude rf envelope
US6143144A (en) * 1999-07-30 2000-11-07 Tokyo Electronlimited Method for etch rate enhancement by background oxygen control in a soft etch system

Also Published As

Publication number Publication date
US20030106645A1 (en) 2003-06-12
WO2002003763B1 (en) 2003-03-13
WO2002003763A2 (en) 2002-01-10
WO2002003763A3 (en) 2002-12-27
EP1300057B1 (en) 2007-05-02
KR100881882B1 (ko) 2009-02-06
DE60128229T2 (de) 2007-08-30
US6897156B2 (en) 2005-05-24
JP2012033958A (ja) 2012-02-16
DE60128229D1 (de) 2007-06-14
AU2001270163A1 (en) 2002-01-14
KR20070074672A (ko) 2007-07-12
JP5538340B2 (ja) 2014-07-02
KR100807143B1 (ko) 2008-02-27
KR20030034108A (ko) 2003-05-01
WO2002003763A8 (en) 2002-04-04
US6531029B1 (en) 2003-03-11
EP1300057A2 (en) 2003-04-09
JP2004520704A (ja) 2004-07-08
TW515005B (en) 2002-12-21

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