JP5115562B2 - 弾性波素子の製造方法 - Google Patents
弾性波素子の製造方法 Download PDFInfo
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- JP5115562B2 JP5115562B2 JP2009550428A JP2009550428A JP5115562B2 JP 5115562 B2 JP5115562 B2 JP 5115562B2 JP 2009550428 A JP2009550428 A JP 2009550428A JP 2009550428 A JP2009550428 A JP 2009550428A JP 5115562 B2 JP5115562 B2 JP 5115562B2
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- 238000000034 method Methods 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 163
- 238000007751 thermal spraying Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 7
- 238000007788 roughening Methods 0.000 claims description 6
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052863 mullite Inorganic materials 0.000 claims description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 2
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- 230000000694 effects Effects 0.000 description 18
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- 238000010438 heat treatment Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000000227 grinding Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 4
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- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
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- 238000007750 plasma spraying Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
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- 210000004127 vitreous body Anatomy 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
本発明の弾性波素子の製造方法においては、圧電基板の一方の主面上にIDTを形成し、IDTを形成した後の圧電基板の他方の主面上に、前記圧電基板の線膨張係数よりも小さい線膨張係数を有する材料を溶射により成膜する。ここで、弾性波素子とは、弾性表面波素子及び弾性境界波素子を示すものである。
まず、実施例1を用いて高温処理特性について説明する。
(実施例1)
線膨張係数が16×10-6/Kであり、厚さ0.02mmのタンタル酸リチウム製基板(LT基板)の一方の主面上に、溶射成膜法により線膨張係数が1×10-6/Kであるムライトを厚さ0.33mmで成膜して4インチ基板を作製した。この4インチ基板に対して加熱処理を行った。このとき、加熱温度180℃、200℃では、4インチ基板は割れないが、加熱温度250℃、350℃では、4インチ基板が割れた。
(実施例2)
線膨張係数が16×10-6/Kであり、直径4インチ、厚さ0.25mmのタンタル酸リチウム製基板(LT基板)の一方の主面上にIDTを形成した。このIDTの形成において、レジストとして化学増幅型レジストを用い、PEB(Post Exposure Bake)の温度は110℃であった。次いで、このLT基板の他方の主面を研削加工により厚さ0.01〜0.04mmまで薄層化すると共に、Ra0.1μmに粗面化した。次いで、粗面化した他方の主面上に、シリコン、アルミナの順で粉末を溶射法により吹き付けて、LT基板及び溶射膜の合計厚が0.25mmになるように成膜を行った。なお、溶射処理は、直流プラズマ溶射装置を用いて、Arのプラズマガスを使用し、電源出力40kWで行った。
Claims (7)
- 圧電基板の一方の主面上にくし型電極を形成する工程と、くし型電極を形成した後の圧電基板の他方の主面上に、前記圧電基板の線膨張係数よりも小さい線膨張係数を有する材料を溶射により成膜する工程と、を具備することを特徴とする弾性波素子の製造方法。
- 溶射による成膜前に前記圧電基板の他方の主面を粗面化する工程をさらに具備することを特徴とする請求項1記載の弾性波素子の製造方法。
- 前記他方の主面がRa=0.01μm〜3μmであることを特徴とする請求項2記載の弾性波素子の製造方法。
- 溶射による成膜前に前記圧電基板の他方の主面を薄層化する工程をさらに具備することを特徴とする請求項1から請求項3のいずれかに記載の弾性波素子の製造方法。
- 前記材料は、ムライト、アルミナ、シリコン及びイットリアからなる群より選ばれた少なくとも一つであることを特徴とする請求項1から請求項4のいずれかに記載の弾性波素子の製造方法。
- 前記圧電基板がタンタル酸リチウム基板又はニオブ酸リチウム基板であることを特徴とする請求項1から請求項5のいずれかに記載の弾性波素子の製造方法。
- 前記溶射により成膜された膜に形成される空孔に充填材を充填する工程をさらに具備することを特徴とする請求項1から請求項6のいずれかに記載の弾性波素子の製造方法。
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JP2009550428A JP5115562B2 (ja) | 2008-01-24 | 2008-11-26 | 弾性波素子の製造方法 |
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JP2008013633 | 2008-01-24 | ||
JP2008013633 | 2008-01-24 | ||
JP2009550428A JP5115562B2 (ja) | 2008-01-24 | 2008-11-26 | 弾性波素子の製造方法 |
PCT/JP2008/071415 WO2009093376A1 (ja) | 2008-01-24 | 2008-11-26 | 弾性波素子の製造方法 |
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JPWO2009093376A1 JPWO2009093376A1 (ja) | 2011-05-26 |
JP5115562B2 true JP5115562B2 (ja) | 2013-01-09 |
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US (1) | US8997320B2 (ja) |
EP (1) | EP2246978B1 (ja) |
JP (1) | JP5115562B2 (ja) |
CN (1) | CN101971491B (ja) |
WO (1) | WO2009093376A1 (ja) |
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CN101926090B (zh) * | 2008-01-25 | 2013-10-30 | 株式会社村田制作所 | 声波元件及其制造方法 |
KR20110020741A (ko) * | 2009-08-24 | 2011-03-03 | 엔지케이 인슐레이터 엘티디 | 복합 기판의 제조 방법 |
WO2012043615A1 (ja) * | 2010-09-28 | 2012-04-05 | 株式会社村田製作所 | 圧電デバイスの製造方法 |
US9503047B2 (en) | 2014-05-01 | 2016-11-22 | Texas Instruments Incorporated | Bulk acoustic wave (BAW) device having roughened bottom side |
US10177734B2 (en) | 2015-08-25 | 2019-01-08 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator |
US10020796B2 (en) | 2015-08-25 | 2018-07-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (SAW) resonator |
US10536133B2 (en) | 2016-04-22 | 2020-01-14 | Avago Technologies International Sales Pte. Limited | Composite surface acoustic wave (SAW) device with absorbing layer for suppression of spurious responses |
US10523178B2 (en) * | 2015-08-25 | 2019-12-31 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator |
US10090822B2 (en) | 2015-08-25 | 2018-10-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (SAW) resonator |
US20170063330A1 (en) * | 2015-08-25 | 2017-03-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (saw) resonator |
US10469056B2 (en) | 2015-08-25 | 2019-11-05 | Avago Technologies International Sales Pte. Limited | Acoustic filters integrated into single die |
US9991870B2 (en) | 2015-08-25 | 2018-06-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (SAW) resonator |
US9369111B1 (en) * | 2015-10-28 | 2016-06-14 | Resonant Inc. | Fabrication of surface acoustic wave filters having plate modes |
US10177735B2 (en) | 2016-02-29 | 2019-01-08 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator |
FR3052298B1 (fr) * | 2016-06-02 | 2018-07-13 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
FR3053532B1 (fr) * | 2016-06-30 | 2018-11-16 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
KR102299066B1 (ko) * | 2017-02-28 | 2021-09-07 | 교세라 가부시키가이샤 | 탄성 표면파 디바이스용 기판 및 의사 탄성 표면파 소자 |
CN108494380A (zh) * | 2018-03-16 | 2018-09-04 | 无锡市好达电子有限公司 | 声表面波材料及其制作方法 |
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2008
- 2008-11-26 US US12/864,060 patent/US8997320B2/en active Active
- 2008-11-26 WO PCT/JP2008/071415 patent/WO2009093376A1/ja active Application Filing
- 2008-11-26 CN CN200880125278.4A patent/CN101971491B/zh active Active
- 2008-11-26 JP JP2009550428A patent/JP5115562B2/ja active Active
- 2008-11-26 EP EP08871214.6A patent/EP2246978B1/en active Active
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JP2002330047A (ja) * | 2001-04-27 | 2002-11-15 | Kyocera Corp | 弾性表面波素子 |
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JP2005229455A (ja) * | 2004-02-16 | 2005-08-25 | Shin Etsu Chem Co Ltd | 複合圧電基板 |
JP2008054276A (ja) * | 2006-07-27 | 2008-03-06 | Koike Co Ltd | 圧電基板及びその製造方法 |
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JPWO2009093376A1 (ja) | 2011-05-26 |
WO2009093376A1 (ja) | 2009-07-30 |
EP2246978B1 (en) | 2018-01-03 |
EP2246978A1 (en) | 2010-11-03 |
CN101971491B (zh) | 2017-08-04 |
US20100293770A1 (en) | 2010-11-25 |
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CN101971491A (zh) | 2011-02-09 |
EP2246978A4 (en) | 2012-04-04 |
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