JP5112323B2 - 弾性境界波装置及びその製造方法 - Google Patents
弾性境界波装置及びその製造方法 Download PDFInfo
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- JP5112323B2 JP5112323B2 JP2008537425A JP2008537425A JP5112323B2 JP 5112323 B2 JP5112323 B2 JP 5112323B2 JP 2008537425 A JP2008537425 A JP 2008537425A JP 2008537425 A JP2008537425 A JP 2008537425A JP 5112323 B2 JP5112323 B2 JP 5112323B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910001020 Au alloy Inorganic materials 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 22
- 238000005566 electron beam evaporation Methods 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 150000002739 metals Chemical class 0.000 claims description 9
- 238000001552 radio frequency sputter deposition Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 120
- 238000003780 insertion Methods 0.000 description 31
- 230000037431 insertion Effects 0.000 description 31
- 229910052802 copper Inorganic materials 0.000 description 20
- 229910045601 alloy Inorganic materials 0.000 description 19
- 239000000956 alloy Substances 0.000 description 19
- 229910052763 palladium Inorganic materials 0.000 description 18
- 238000010586 diagram Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 229910017398 Au—Ni Inorganic materials 0.000 description 5
- 229910002708 Au–Cu Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003405 preventing effect Effects 0.000 description 4
- 229910002710 Au-Pd Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910002711 AuNi Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- -1 that is Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
2…圧電体
3…誘電体
4…電極膜
4a,4e…Ti膜
4b,4d…Pt膜
4c…Au合金膜
11…IDT
12,13…反射器
21…不平衡端子
22…第1の平衡端子
23…第2の平衡端子
24…縦結合共振子型弾性境界波フィルタ部
25…弾性境界波共振子
26,27…弾性境界波共振子
31〜35…第1〜第5のIDT
36,37…反射器
図1(a),(b)及び図2は、それぞれ、本発明の一実施形態に係る弾性境界波フィルタ装置を説明するための模式的正面断面図及び電極構造を拡大して示す模式的正面断面図、及び電極構造を示す平面図である。
次に、図4(a)に示す電極構造を有する1ポート型弾性境界波共振子を作製し、評価した。図4(a)に示すように、圧電体2上に、IDT11及びIDT11の両側に配置された反射器12,13を有するように電極膜4が成膜されている。そして、図4(a)では図示は省略されているが、この電極膜4を覆うように、図1(a)に示した場合と同様に、誘電体3が積層されている。本実験例においても、圧電体2としては、15°YカットX伝搬のLiNbO3単結晶基板を用い、上記電極膜4を電子ビーム蒸着により形成した後に、誘電体として、SiO2をRFマグネトロンスパッタにより成膜した。
実施例1で耐電力性を評価した弾性境界波フィルタ装置1について、Cuを含むAu合金膜におけるCuの濃度を0.01〜4.8重量%の割合までの範囲で変化させ、挿入損失とCu濃度との関係を評価した。結果を表2及び図7に示す。
Claims (2)
- 圧電体と、前記圧電体に積層された誘電体と、前記圧電体と前記誘電体との間の境界に配置された電極膜とを備え、前記境界を伝搬する弾性境界波を利用した弾性境界波装置において、
前記電極膜が、0.01〜1.7重量%の割合でCuを含むAu合金電極膜、0.01〜2.5重量%の割合でPdを含むAu合金電極膜及び0.01〜1.0重量%の割合でNiを含むAu合金電極膜の内のいずれかのAu合金電極膜であることを特徴とする、弾性境界波装置。 - 圧電体上に、DCスパッタ法、RFスパッタ法及び電子ビーム蒸着法の内のいずれかの方法によりAu合金膜を成膜する工程と、前記Au合金膜が成膜された圧電体上に誘電体を積層する工程とを備え、
前記Au合金膜の成膜に際し、原料として、0.01〜1.7重量%の割合でCuを含むAu合金、0.01〜2.5重量%の割合でPdを含むAu合金及び0.01〜1.0重量%の割合でNiを含むAu合金のいずれか、または前記Au合金の組成に相当する割合で用意された2種の金属単体を用いることを特徴とする、弾性境界波装置の製造方法。
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JP2008537425A JP5112323B2 (ja) | 2006-09-29 | 2007-07-20 | 弾性境界波装置及びその製造方法 |
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JP2006267805 | 2006-09-29 | ||
JP2006267805 | 2006-09-29 | ||
PCT/JP2007/064323 WO2008041404A1 (fr) | 2006-09-29 | 2007-07-20 | Dispositif à ondes limites élastiques, et procédé pour sa fabrication |
JP2008537425A JP5112323B2 (ja) | 2006-09-29 | 2007-07-20 | 弾性境界波装置及びその製造方法 |
Publications (2)
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JPWO2008041404A1 JPWO2008041404A1 (ja) | 2010-02-04 |
JP5112323B2 true JP5112323B2 (ja) | 2013-01-09 |
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JP2008537425A Active JP5112323B2 (ja) | 2006-09-29 | 2007-07-20 | 弾性境界波装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7902717B2 (ja) |
JP (1) | JP5112323B2 (ja) |
DE (1) | DE112007002253B8 (ja) |
WO (1) | WO2008041404A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2557420B1 (en) | 2011-08-12 | 2015-10-14 | Nxp B.V. | Semiconductor device having Au-Cu electrodes and method of manufacturing semiconductor device |
DE102019204755A1 (de) | 2018-04-18 | 2019-10-24 | Skyworks Solutions, Inc. | Akustikwellenvorrichtung mit mehrschichtigem piezoelektrischem substrat |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2936228B2 (ja) * | 1989-06-13 | 1999-08-23 | 株式会社村田製作所 | 弾性表面波フィルタ |
JPH02278909A (ja) | 1989-04-19 | 1990-11-15 | Seiko Epson Corp | 弾性表面波装置 |
JP3438360B2 (ja) * | 1994-11-14 | 2003-08-18 | 株式会社村田製作所 | 弾性表面波素子の電極形成方法 |
JPH10145167A (ja) | 1996-11-05 | 1998-05-29 | Japan Radio Co Ltd | Saw伝搬特性調整方法並びにその応用方法及び回路 |
JPH10335974A (ja) | 1997-05-29 | 1998-12-18 | Matsushita Electric Ind Co Ltd | 弾性境界波素子 |
JP2003309442A (ja) * | 2002-04-17 | 2003-10-31 | Toyo Commun Equip Co Ltd | 弾性表面波デバイスの製造方法 |
KR100851219B1 (ko) * | 2003-02-10 | 2008-08-07 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성 경계파 장치 |
JP2005005763A (ja) | 2003-06-09 | 2005-01-06 | Alps Electric Co Ltd | 表面弾性波素子及びフィルタ |
CN1902817B (zh) * | 2004-01-13 | 2010-12-15 | 株式会社村田制作所 | 边界声波装置 |
JP2005354430A (ja) * | 2004-06-10 | 2005-12-22 | Epson Toyocom Corp | 弾性表面波変換器及びそれを用いた弾性表面波デバイス |
JP4637600B2 (ja) * | 2005-02-07 | 2011-02-23 | 京セラ株式会社 | 弾性表面波素子および通信装置 |
TWI325687B (en) * | 2006-02-23 | 2010-06-01 | Murata Manufacturing Co | Boundary acoustic wave device and method for producing the same |
US7741843B2 (en) * | 2007-05-02 | 2010-06-22 | CaseWestern Reserve University | Determining phase-encoding direction for parallel MRI |
-
2007
- 2007-07-20 WO PCT/JP2007/064323 patent/WO2008041404A1/ja active Application Filing
- 2007-07-20 DE DE112007002253.1T patent/DE112007002253B8/de active Active
- 2007-07-20 JP JP2008537425A patent/JP5112323B2/ja active Active
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2009
- 2009-03-27 US US12/412,446 patent/US7902717B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE112007002253B8 (de) | 2016-03-10 |
US20090179521A1 (en) | 2009-07-16 |
JPWO2008041404A1 (ja) | 2010-02-04 |
US7902717B2 (en) | 2011-03-08 |
WO2008041404A1 (fr) | 2008-04-10 |
DE112007002253T5 (de) | 2009-08-06 |
DE112007002253B4 (de) | 2015-12-24 |
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