JP5100952B2 - プラズマ閉じ込めのためのウエハ領域圧力制御 - Google Patents

プラズマ閉じ込めのためのウエハ領域圧力制御 Download PDF

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Publication number
JP5100952B2
JP5100952B2 JP2002533335A JP2002533335A JP5100952B2 JP 5100952 B2 JP5100952 B2 JP 5100952B2 JP 2002533335 A JP2002533335 A JP 2002533335A JP 2002533335 A JP2002533335 A JP 2002533335A JP 5100952 B2 JP5100952 B2 JP 5100952B2
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adjustable
confinement ring
adjustable confinement
ring
confinement
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JP2004511096A (ja
JP2004511096A5 (enExample
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テジュン・ハン
ベンジン・デイビッド・ダブリュ．
エリングボエ・アルバート・アール．
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
JP2002533335A 2000-10-04 2001-09-26 プラズマ閉じ込めのためのウエハ領域圧力制御 Expired - Lifetime JP5100952B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/684,695 US6492774B1 (en) 2000-10-04 2000-10-04 Wafer area pressure control for plasma confinement
US09/684,695 2000-10-04
PCT/US2001/042332 WO2002029848A2 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012135639A Division JP2012178614A (ja) 2000-10-04 2012-06-15 プラズマ閉じ込めのためのウエハ領域圧力制御

Publications (3)

Publication Number Publication Date
JP2004511096A JP2004511096A (ja) 2004-04-08
JP2004511096A5 JP2004511096A5 (enExample) 2009-08-13
JP5100952B2 true JP5100952B2 (ja) 2012-12-19

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JP2002533335A Expired - Lifetime JP5100952B2 (ja) 2000-10-04 2001-09-26 プラズマ閉じ込めのためのウエハ領域圧力制御
JP2012135639A Withdrawn JP2012178614A (ja) 2000-10-04 2012-06-15 プラズマ閉じ込めのためのウエハ領域圧力制御

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JP2012135639A Withdrawn JP2012178614A (ja) 2000-10-04 2012-06-15 プラズマ閉じ込めのためのウエハ領域圧力制御

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Country Link
US (3) US6492774B1 (enExample)
EP (1) EP1323179B1 (enExample)
JP (2) JP5100952B2 (enExample)
KR (1) KR100603682B1 (enExample)
CN (1) CN1322539C (enExample)
AU (1) AU2001296916A1 (enExample)
RU (1) RU2270492C2 (enExample)
TW (1) TW587272B (enExample)
WO (1) WO2002029848A2 (enExample)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492774B1 (en) * 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6602381B1 (en) 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6926803B2 (en) * 2002-04-17 2005-08-09 Lam Research Corporation Confinement ring support assembly
US6936135B2 (en) * 2002-04-17 2005-08-30 Lam Research Corporation Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber
TWI229367B (en) 2002-12-26 2005-03-11 Canon Kk Chemical treatment apparatus and chemical treatment method
US7296534B2 (en) * 2003-04-30 2007-11-20 Tokyo Electron Limited Hybrid ball-lock attachment apparatus
US7053994B2 (en) * 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
KR100539266B1 (ko) * 2004-06-02 2005-12-27 삼성전자주식회사 호 절편 형태의 한정부를 가지는 플라즈마 공정 장비
US7863702B2 (en) * 2004-06-10 2011-01-04 Samsung Electronics Co., Ltd. Image sensor package and method of manufacturing the same
KR100790392B1 (ko) * 2004-11-12 2008-01-02 삼성전자주식회사 반도체 제조장치
US7632375B2 (en) * 2004-12-30 2009-12-15 Lam Research Corporation Electrically enhancing the confinement of plasma
US7364623B2 (en) * 2005-01-27 2008-04-29 Lam Research Corporation Confinement ring drive
US20060278339A1 (en) * 2005-06-13 2006-12-14 Lam Research Corporation, A Delaware Corporation Etch rate uniformity using the independent movement of electrode pieces
US7837825B2 (en) * 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
KR100621778B1 (ko) * 2005-06-17 2006-09-11 삼성전자주식회사 플라즈마 처리 장치
CN100362622C (zh) * 2005-12-07 2008-01-16 北京北方微电子基地设备工艺研究中心有限责任公司 下抽气式刻蚀装置
US7632377B2 (en) 2006-01-24 2009-12-15 United Microelectronics Corp. Dry etching apparatus capable of monitoring motion of WAP ring thereof
US7578258B2 (en) * 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US8034409B2 (en) * 2006-12-20 2011-10-11 Lam Research Corporation Methods, apparatuses, and systems for fabricating three dimensional integrated circuits
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
JP5194125B2 (ja) * 2007-09-25 2013-05-08 ラム リサーチ コーポレーション シャワーヘッド電極アセンブリ用の温度制御モジュール、シャワーヘッド電極アセンブリ及びシャワーヘッド電極アセンブリの上部電極の温度を制御する方法
US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
TWI516175B (zh) * 2008-02-08 2016-01-01 蘭姆研究公司 在電漿處理腔室中穩定壓力的方法及其程式儲存媒體
US20090286397A1 (en) * 2008-05-15 2009-11-19 Lam Research Corporation Selective inductive double patterning
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8627783B2 (en) * 2008-12-19 2014-01-14 Lam Research Corporation Combined wafer area pressure control and plasma confinement assembly
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8313612B2 (en) * 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
KR101559913B1 (ko) * 2009-06-25 2015-10-27 삼성전자주식회사 플라즈마 건식 식각 장치
US8617347B2 (en) * 2009-08-06 2013-12-31 Applied Materials, Inc. Vacuum processing chambers incorporating a moveable flow equalizer
CN102550130A (zh) * 2009-08-31 2012-07-04 朗姆研究公司 用于执行等离子体约束的多外围环装置
US8992722B2 (en) * 2009-09-01 2015-03-31 Lam Research Corporation Direct drive arrangement to control confinement rings positioning and methods thereof
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
JP5597463B2 (ja) 2010-07-05 2014-10-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9076826B2 (en) * 2010-09-24 2015-07-07 Lam Research Corporation Plasma confinement ring assembly for plasma processing chambers
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9530620B2 (en) 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9043525B2 (en) 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9564285B2 (en) * 2013-07-15 2017-02-07 Lam Research Corporation Hybrid feature etching and bevel etching systems
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
CN105390362B (zh) * 2015-10-29 2017-06-23 上海华力微电子有限公司 用于更换压力控制阀上的o型圈的系统及方法
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US20170278679A1 (en) * 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
KR101680850B1 (ko) * 2016-06-28 2016-11-29 주식회사 기가레인 배기유로의 크기가 조절되는 플라즈마 처리 장치
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
KR102182298B1 (ko) 2017-11-21 2020-11-25 램 리써치 코포레이션 하단 링 및 중간 에지 링
CN110767568B (zh) * 2018-07-26 2022-05-27 北京北方华创微电子装备有限公司 压力调节组件、下电极装置、工艺腔室和半导体处理设备
KR20230106754A (ko) 2018-08-13 2023-07-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
WO2021194470A1 (en) 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
KR102877140B1 (ko) 2021-04-29 2025-10-28 삼성전자주식회사 플라즈마 한정 링, 이를 포함하는 반도체 제조 장비 및 이를 이용한 반도체 소자 제조 방법
CN115513023B (zh) * 2021-06-23 2025-07-08 中微半导体设备(上海)股份有限公司 约束环、等离子处理装置及其排气控制方法
TWI857462B (zh) * 2023-01-18 2024-10-01 奈盾科技股份有限公司 雙腔室壓力控制方法與雙腔室壓力控制裝置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
SU1702825A1 (ru) * 1989-11-09 1994-02-28 Воронежский завод полупроводниковых приборов Способ изготовления полупроводниковых приборов
US5246532A (en) 1990-10-26 1993-09-21 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus
JP2638443B2 (ja) 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5534751A (en) 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JPH1012578A (ja) * 1996-06-26 1998-01-16 Mitsubishi Electric Corp ウエハ・支持基板貼付け方法，及びウエハ・支持基板貼付け装置
RU2131631C1 (ru) * 1997-04-18 1999-06-10 Самсоненко Борис Николаевич Способ изготовления полупроводниковых приборов
US6026762A (en) * 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
JP3468446B2 (ja) * 1997-05-20 2003-11-17 東京エレクトロン株式会社 プラズマ処理装置
US6008130A (en) * 1997-08-14 1999-12-28 Vlsi Technology, Inc. Polymer adhesive plasma confinement ring
US6019060A (en) * 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
JP2000058512A (ja) 1998-08-03 2000-02-25 Matsushita Electric Ind Co Ltd プラズマ処理装置および処理方法
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6354241B1 (en) * 1999-07-15 2002-03-12 Applied Materials, Inc. Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing
US6350317B1 (en) 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
US6492774B1 (en) * 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6936135B2 (en) * 2002-04-17 2005-08-30 Lam Research Corporation Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber

Also Published As

Publication number Publication date
JP2004511096A (ja) 2004-04-08
EP1323179B1 (en) 2013-11-06
EP1323179A2 (en) 2003-07-02
US7470627B2 (en) 2008-12-30
AU2001296916A1 (en) 2002-04-15
RU2270492C2 (ru) 2006-02-20
US20050051268A1 (en) 2005-03-10
US20020190657A1 (en) 2002-12-19
JP2012178614A (ja) 2012-09-13
CN1479936A (zh) 2004-03-03
TW587272B (en) 2004-05-11
KR20030051698A (ko) 2003-06-25
WO2002029848A3 (en) 2002-10-31
WO2002029848A2 (en) 2002-04-11
KR100603682B1 (ko) 2006-07-20
US6823815B2 (en) 2004-11-30
US6492774B1 (en) 2002-12-10
CN1322539C (zh) 2007-06-20

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