JP5566982B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP5566982B2 JP5566982B2 JP2011225071A JP2011225071A JP5566982B2 JP 5566982 B2 JP5566982 B2 JP 5566982B2 JP 2011225071 A JP2011225071 A JP 2011225071A JP 2011225071 A JP2011225071 A JP 2011225071A JP 5566982 B2 JP5566982 B2 JP 5566982B2
- Authority
- JP
- Japan
- Prior art keywords
- ring
- plasma processing
- confinement ring
- confinement
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Description
Claims (7)
- プラズマ処理装置であって、
真空チャンバと、
前記真空チャンバと流体的に連通する排気口と、
前記真空チャンバと流体的に連通するガス源と、
閉じ込め装置であって、
前記真空チャンバ内の垂直制限リングであって、前記プラズマ処理装置に連結された第1端と、自由端であって、前記垂直方向に調節可能な閉じ込めリングに隣接する第2端とを有する垂直制限リングと、
前記真空チャンバ内の垂直方向に調節可能な閉じ込めリングと、
を有する前記閉じ込め装置と、
を備えるプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置であって、前記プラズマ処理チャンバ内でプラズマ処理中に前記閉じ込めリングを垂直方向に調節する、前記垂直方向に調節可能な閉じ込めリングに結合されたコントローラをさらに備えるプラズマ処理装置。
- 請求項1または請求項2に記載のプラズマ処理装置であって、前記垂直制限リングは前記閉じ込めリングの外側に位置するプラズマ処理装置。
- 請求項1または請求項2に記載のプラズマ処理装置であって、前記垂直制限リングが前記閉じ込めリングの内側に位置するプラズマ処理装置。
- 請求項1から請求項4のうちのいずれかに記載のプラズマ処理装置であって、前記垂直制限リングの前記自由端がリップを有するプラズマ処理装置。
- 請求項1から請求項5のうちのいずれかに記載のプラズマ処理装置であって、前記閉じ込めリングがリップを有するプラズマ処理装置。
- 請求項1から請求項6のうちのいずれかに記載のプラズマ処理装置であって、前記真空チャンバ内に、前記真空チャンバ内で基板を保持するチャックを備えるプラズマ処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/637,736 | 2000-08-11 | ||
US09/637,736 US6433484B1 (en) | 2000-08-11 | 2000-08-11 | Wafer area pressure control |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002520275A Division JP4868693B2 (ja) | 2000-08-11 | 2001-07-31 | ウェハ領域圧力制御 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012015552A JP2012015552A (ja) | 2012-01-19 |
JP5566982B2 true JP5566982B2 (ja) | 2014-08-06 |
Family
ID=24557172
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002520275A Expired - Fee Related JP4868693B2 (ja) | 2000-08-11 | 2001-07-31 | ウェハ領域圧力制御 |
JP2011225071A Expired - Lifetime JP5566982B2 (ja) | 2000-08-11 | 2011-10-12 | プラズマ処理装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002520275A Expired - Fee Related JP4868693B2 (ja) | 2000-08-11 | 2001-07-31 | ウェハ領域圧力制御 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6433484B1 (ja) |
EP (1) | EP1362362B1 (ja) |
JP (2) | JP4868693B2 (ja) |
KR (1) | KR100807133B1 (ja) |
CN (1) | CN1269178C (ja) |
AU (1) | AU2001280949A1 (ja) |
DE (1) | DE60140766D1 (ja) |
TW (1) | TWI235403B (ja) |
WO (1) | WO2002015236A2 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0250853A (ja) * | 1988-08-12 | 1990-02-20 | Nec Corp | 画像形成装置 |
US6492774B1 (en) * | 2000-10-04 | 2002-12-10 | Lam Research Corporation | Wafer area pressure control for plasma confinement |
US6800173B2 (en) * | 2000-12-15 | 2004-10-05 | Novellus Systems, Inc. | Variable gas conductance control for a process chamber |
US6846747B2 (en) | 2002-04-09 | 2005-01-25 | Unaxis Usa Inc. | Method for etching vias |
JP3940095B2 (ja) * | 2003-05-08 | 2007-07-04 | 忠弘 大見 | 基板処理装置 |
US20050103267A1 (en) * | 2003-11-14 | 2005-05-19 | Hur Gwang H. | Flat panel display manufacturing apparatus |
US20050263070A1 (en) * | 2004-05-25 | 2005-12-01 | Tokyo Electron Limited | Pressure control and plasma confinement in a plasma processing chamber |
KR100539266B1 (ko) | 2004-06-02 | 2005-12-27 | 삼성전자주식회사 | 호 절편 형태의 한정부를 가지는 플라즈마 공정 장비 |
US20060043067A1 (en) * | 2004-08-26 | 2006-03-02 | Lam Research Corporation | Yttria insulator ring for use inside a plasma chamber |
US7364623B2 (en) * | 2005-01-27 | 2008-04-29 | Lam Research Corporation | Confinement ring drive |
US7837825B2 (en) * | 2005-06-13 | 2010-11-23 | Lam Research Corporation | Confined plasma with adjustable electrode area ratio |
CN100452945C (zh) * | 2007-06-20 | 2009-01-14 | 中微半导体设备(上海)有限公司 | 包含多个处理平台的去耦合反应离子刻蚀室 |
US8043430B2 (en) | 2006-12-20 | 2011-10-25 | Lam Research Corporation | Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber |
US7824519B2 (en) * | 2007-05-18 | 2010-11-02 | Lam Research Corporation | Variable volume plasma processing chamber and associated methods |
US8679288B2 (en) | 2008-06-09 | 2014-03-25 | Lam Research Corporation | Showerhead electrode assemblies for plasma processing apparatuses |
US8449679B2 (en) | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
US8627783B2 (en) * | 2008-12-19 | 2014-01-14 | Lam Research Corporation | Combined wafer area pressure control and plasma confinement assembly |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
SG178287A1 (en) * | 2009-08-31 | 2012-03-29 | Lam Res Corp | A local plasma confinement and pressure control arrangement and methods thereof |
EP2484185A4 (en) * | 2009-09-28 | 2014-07-23 | Lam Res Corp | SLING CONTAINMENT RING ARRANGEMENTS AND ASSOCIATED METHODS |
CN102136410B (zh) * | 2010-01-27 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | 用于半导体工艺腔的清洁方法 |
US20130052369A1 (en) * | 2010-05-06 | 2013-02-28 | Oerlikon Solar Ag, Truebbach | Plasma reactor |
US9478428B2 (en) | 2010-10-05 | 2016-10-25 | Skyworks Solutions, Inc. | Apparatus and methods for shielding a plasma etcher electrode |
US20120083129A1 (en) | 2010-10-05 | 2012-04-05 | Skyworks Solutions, Inc. | Apparatus and methods for focusing plasma |
US20150020848A1 (en) * | 2013-07-19 | 2015-01-22 | Lam Research Corporation | Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning |
KR101680850B1 (ko) * | 2016-06-28 | 2016-11-29 | 주식회사 기가레인 | 배기유로의 크기가 조절되는 플라즈마 처리 장치 |
CN113745081B (zh) * | 2020-05-27 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种隔离环组件、等离子体处理装置及处理方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6068784A (en) | 1989-10-03 | 2000-05-30 | Applied Materials, Inc. | Process used in an RF coupled plasma reactor |
US5246532A (en) * | 1990-10-26 | 1993-09-21 | Mitsubishi Denki Kabushiki Kaisha | Plasma processing apparatus |
JP2638443B2 (ja) * | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | ドライエッチング方法およびドライエッチング装置 |
US5534751A (en) | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
US5968275A (en) * | 1997-06-25 | 1999-10-19 | Lam Research Corporation | Methods and apparatus for passivating a substrate in a plasma reactor |
US6008130A (en) * | 1997-08-14 | 1999-12-28 | Vlsi Technology, Inc. | Polymer adhesive plasma confinement ring |
US6019060A (en) * | 1998-06-24 | 2000-02-01 | Lam Research Corporation | Cam-based arrangement for positioning confinement rings in a plasma processing chamber |
US5998932A (en) * | 1998-06-26 | 1999-12-07 | Lam Research Corporation | Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
JP2000030896A (ja) * | 1998-07-10 | 2000-01-28 | Anelva Corp | プラズマ閉込め装置 |
JP2000058512A (ja) * | 1998-08-03 | 2000-02-25 | Matsushita Electric Ind Co Ltd | プラズマ処理装置および処理方法 |
US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
JP3632564B2 (ja) * | 2000-05-17 | 2005-03-23 | セイコーエプソン株式会社 | 半導体ウェハの製造方法およびプラズマcvd装置 |
-
2000
- 2000-08-11 US US09/637,736 patent/US6433484B1/en not_active Expired - Lifetime
-
2001
- 2001-07-31 EP EP01959386A patent/EP1362362B1/en not_active Expired - Lifetime
- 2001-07-31 AU AU2001280949A patent/AU2001280949A1/en not_active Abandoned
- 2001-07-31 WO PCT/US2001/024103 patent/WO2002015236A2/en active Application Filing
- 2001-07-31 CN CNB018166873A patent/CN1269178C/zh not_active Expired - Fee Related
- 2001-07-31 KR KR1020037001970A patent/KR100807133B1/ko not_active IP Right Cessation
- 2001-07-31 JP JP2002520275A patent/JP4868693B2/ja not_active Expired - Fee Related
- 2001-07-31 DE DE60140766T patent/DE60140766D1/de not_active Expired - Lifetime
- 2001-08-06 TW TW090119167A patent/TWI235403B/zh not_active IP Right Cessation
-
2011
- 2011-10-12 JP JP2011225071A patent/JP5566982B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2012015552A (ja) | 2012-01-19 |
KR20030066595A (ko) | 2003-08-09 |
JP4868693B2 (ja) | 2012-02-01 |
DE60140766D1 (de) | 2010-01-21 |
WO2002015236A2 (en) | 2002-02-21 |
AU2001280949A1 (en) | 2002-02-25 |
JP2004511085A (ja) | 2004-04-08 |
TWI235403B (en) | 2005-07-01 |
KR100807133B1 (ko) | 2008-02-27 |
EP1362362B1 (en) | 2009-12-09 |
CN1489778A (zh) | 2004-04-14 |
WO2002015236A3 (en) | 2003-09-04 |
CN1269178C (zh) | 2006-08-09 |
EP1362362A2 (en) | 2003-11-19 |
US6433484B1 (en) | 2002-08-13 |
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