JP5088219B2 - ＩｎＰ基板及びその製造方法 - Google Patents
ＩｎＰ基板及びその製造方法 Download PDFInfo
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- JP5088219B2 JP5088219B2 JP2008110459A JP2008110459A JP5088219B2 JP 5088219 B2 JP5088219 B2 JP 5088219B2 JP 2008110459 A JP2008110459 A JP 2008110459A JP 2008110459 A JP2008110459 A JP 2008110459A JP 5088219 B2 JP5088219 B2 JP 5088219B2
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- 239000000758 substrate Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 238000000034 method Methods 0.000 claims description 29
- 238000007789 sealing Methods 0.000 claims description 23
- 239000000565 sealant Substances 0.000 claims description 20
- 239000003795 chemical substances by application Substances 0.000 claims description 19
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052810 boron oxide Inorganic materials 0.000 claims description 17
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 description 22
- 125000004429 atom Chemical group 0.000 description 13
- 238000001556 precipitation Methods 0.000 description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000002835 absorbance Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007847 structural defect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000012844 infrared spectroscopy analysis Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008110459A JP5088219B2 (ja) | 2003-03-13 | 2008-04-21 | ＩｎＰ基板及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003068367 | 2003-03-13 | ||
| JP2003068367 | 2003-03-13 | ||
| JP2008110459A JP5088219B2 (ja) | 2003-03-13 | 2008-04-21 | ＩｎＰ基板及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004071392A Division JP4306500B2 (ja) | 2003-03-13 | 2004-03-12 | ＩｎＰ基板及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008201672A JP2008201672A (ja) | 2008-09-04 |
| JP2008201672A5 JP2008201672A5 (https=) | 2008-11-20 |
| JP5088219B2 true JP5088219B2 (ja) | 2012-12-05 |
Family
ID=39779553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008110459A Expired - Fee Related JP5088219B2 (ja) | 2003-03-13 | 2008-04-21 | ＩｎＰ基板及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5088219B2 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02239195A (ja) * | 1989-03-09 | 1990-09-21 | Nippon Mining Co Ltd | 半絶縁性３―５族化合物半導体単結晶の製造方法 |
| JP2736343B2 (ja) * | 1989-09-18 | 1998-04-02 | 株式会社ジャパンエナジー | 半絶縁性ＩｎＰ単結晶の製造方法 |
| JPH0632699A (ja) * | 1992-07-14 | 1994-02-08 | Japan Energy Corp | 半絶縁性ＩｎＰ単結晶の製造方法 |
| JPH11189499A (ja) * | 1997-12-25 | 1999-07-13 | Japan Energy Corp | 化合物半導体単結晶の製造方法 |
| JP2000313699A (ja) * | 1999-04-27 | 2000-11-14 | Japan Energy Corp | 半絶縁性ＩｎＰ単結晶の製造方法 |
-
2008
- 2008-04-21 JP JP2008110459A patent/JP5088219B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008201672A (ja) | 2008-09-04 |
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