JP2008201672A5 - - Google Patents
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- Publication number
- JP2008201672A5 JP2008201672A5 JP2008110459A JP2008110459A JP2008201672A5 JP 2008201672 A5 JP2008201672 A5 JP 2008201672A5 JP 2008110459 A JP2008110459 A JP 2008110459A JP 2008110459 A JP2008110459 A JP 2008110459A JP 2008201672 A5 JP2008201672 A5 JP 2008201672A5
- Authority
- JP
- Japan
- Prior art keywords
- inp
- ingot
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- inp substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000007789 sealing Methods 0.000 claims 4
- 229910052810 boron oxide Inorganic materials 0.000 claims 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims 3
- 239000000565 sealant Substances 0.000 claims 3
- 238000002835 absorbance Methods 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008110459A JP5088219B2 (ja) | 2003-03-13 | 2008-04-21 | ＩｎＰ基板及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003068367 | 2003-03-13 | ||
| JP2003068367 | 2003-03-13 | ||
| JP2008110459A JP5088219B2 (ja) | 2003-03-13 | 2008-04-21 | ＩｎＰ基板及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004071392A Division JP4306500B2 (ja) | 2003-03-13 | 2004-03-12 | ＩｎＰ基板及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008201672A JP2008201672A (ja) | 2008-09-04 |
| JP2008201672A5 true JP2008201672A5 (https=) | 2008-11-20 |
| JP5088219B2 JP5088219B2 (ja) | 2012-12-05 |
Family
ID=39779553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008110459A Expired - Fee Related JP5088219B2 (ja) | 2003-03-13 | 2008-04-21 | ＩｎＰ基板及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5088219B2 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02239195A (ja) * | 1989-03-09 | 1990-09-21 | Nippon Mining Co Ltd | 半絶縁性３―５族化合物半導体単結晶の製造方法 |
| JP2736343B2 (ja) * | 1989-09-18 | 1998-04-02 | 株式会社ジャパンエナジー | 半絶縁性ＩｎＰ単結晶の製造方法 |
| JPH0632699A (ja) * | 1992-07-14 | 1994-02-08 | Japan Energy Corp | 半絶縁性ＩｎＰ単結晶の製造方法 |
| JPH11189499A (ja) * | 1997-12-25 | 1999-07-13 | Japan Energy Corp | 化合物半導体単結晶の製造方法 |
| JP2000313699A (ja) * | 1999-04-27 | 2000-11-14 | Japan Energy Corp | 半絶縁性ＩｎＰ単結晶の製造方法 |
-
2008
- 2008-04-21 JP JP2008110459A patent/JP5088219B2/ja not_active Expired - Fee Related
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