JP5087855B2 - 熱処理評価用ウェーハ、熱処理評価方法、および半導体ウェーハの製造方法 - Google Patents

熱処理評価用ウェーハ、熱処理評価方法、および半導体ウェーハの製造方法 Download PDF

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Publication number
JP5087855B2
JP5087855B2 JP2006103845A JP2006103845A JP5087855B2 JP 5087855 B2 JP5087855 B2 JP 5087855B2 JP 2006103845 A JP2006103845 A JP 2006103845A JP 2006103845 A JP2006103845 A JP 2006103845A JP 5087855 B2 JP5087855 B2 JP 5087855B2
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Prior art keywords
heat treatment
wafer
epitaxial layer
evaluation
treatment evaluation
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JP2007281119A (ja
JP2007281119A5 (enExample
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崇史 山下
モハマッド．ビー．シャバニー
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Sumco Corp
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Sumco Corp
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Priority to JP2006103845A priority Critical patent/JP5087855B2/ja
Priority to US11/695,699 priority patent/US7892862B2/en
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Publication of JP2007281119A5 publication Critical patent/JP2007281119A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2006103845A 2006-04-05 2006-04-05 熱処理評価用ウェーハ、熱処理評価方法、および半導体ウェーハの製造方法 Active JP5087855B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006103845A JP5087855B2 (ja) 2006-04-05 2006-04-05 熱処理評価用ウェーハ、熱処理評価方法、および半導体ウェーハの製造方法
US11/695,699 US7892862B2 (en) 2006-04-05 2007-04-03 Method of evaluating thermal treatment and method of manufacturing semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006103845A JP5087855B2 (ja) 2006-04-05 2006-04-05 熱処理評価用ウェーハ、熱処理評価方法、および半導体ウェーハの製造方法

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JP2007281119A JP2007281119A (ja) 2007-10-25
JP2007281119A5 JP2007281119A5 (enExample) 2009-04-23
JP5087855B2 true JP5087855B2 (ja) 2012-12-05

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US (1) US7892862B2 (enExample)
JP (1) JP5087855B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766599B (zh) * 2021-02-26 2022-06-01 昇陽國際半導體股份有限公司 晶圓再生製程

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5261960B2 (ja) * 2007-04-03 2013-08-14 株式会社Ｓｕｍｃｏ 半導体基板の製造方法
JP5444607B2 (ja) * 2007-10-31 2014-03-19 株式会社Ｓｕｍｃｏ エピタキシャル膜形成装置用のサセプタ、エピタキシャル膜形成装置、エピタキシャルウェーハの製造方法
JP2009277947A (ja) * 2008-05-15 2009-11-26 Sumco Corp 半導体ウェーハ
JP2009283617A (ja) * 2008-05-21 2009-12-03 Sumco Corp 半導体ウェーハ
JP2009289877A (ja) * 2008-05-28 2009-12-10 Sumco Corp 半導体ウェーハ
JP5439752B2 (ja) * 2008-06-13 2014-03-12 信越半導体株式会社 汚染検出用モニターウェーハ、汚染検出方法及びエピタキシャルウェーハの製造方法
WO2010044279A1 (ja) * 2008-10-16 2010-04-22 株式会社Sumco ゲッタリングシンクを有する固体撮像素子用エピタキシャル基板、半導体デバイス、裏面照射型固体撮像素子およびそれらの製造方法
JP5201126B2 (ja) * 2009-12-15 2013-06-05 信越半導体株式会社 シリコンエピタキシャルウェーハの不純物評価方法
JP2012004270A (ja) * 2010-06-16 2012-01-05 Sumitomo Electric Ind Ltd 炭化珪素半導体の洗浄方法、炭化珪素半導体および炭化珪素半導体装置
JP6136205B2 (ja) * 2012-11-13 2017-05-31 株式会社Sumco エピタキシャル成長装置炉内の汚染評価方法および汚染評価用テストウェーハ

Family Cites Families (14)

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US4420722A (en) * 1980-11-14 1983-12-13 Rca Corporation Testing semiconductor furnaces for heavy metal contamination
US5350489A (en) * 1990-10-19 1994-09-27 Purex Co., Ltd. Treatment method of cleaning surface of plastic molded item
DE4126955C2 (de) * 1991-08-14 1994-05-05 Fraunhofer Ges Forschung Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen
US5374396A (en) * 1992-05-05 1994-12-20 Tsi Incorporated Syringe injection system for measuring non-volatile residue in solvents
JP3120825B2 (ja) * 1994-11-14 2000-12-25 信越半導体株式会社 エピタキシャルウエーハ及びその製造方法
JP3680476B2 (ja) 1997-02-05 2005-08-10 三菱住友シリコン株式会社 熱処理評価用ウェーハおよびこれを用いた熱処理評価方法
JPH10303207A (ja) * 1997-04-23 1998-11-13 Hitachi Ltd 半導体ウエハおよびその製造方法、ならびに半導体集積回路装置
JPH1174276A (ja) * 1997-08-27 1999-03-16 Sumitomo Metal Ind Ltd エピタキシャルシリコン半導体基板とその製造方法
JP3989122B2 (ja) * 1998-08-07 2007-10-10 シルトロニック・ジャパン株式会社 シリコン半導体基板の製造方法
JP2000072595A (ja) * 1998-08-31 2000-03-07 Shin Etsu Handotai Co Ltd ボロンドープシリコン単結晶ウエーハ及びエピタキシャルシリコンウエーハ及びこれらの製造方法
JP2000277404A (ja) * 1999-03-26 2000-10-06 Mitsubishi Materials Silicon Corp シリコンウェーハ
JP3440419B2 (ja) * 2001-02-02 2003-08-25 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP4356973B2 (ja) * 2003-09-10 2009-11-04 株式会社Ｓｕｍｃｏ ウェーハの金属汚染評価方法
JP5042445B2 (ja) * 2004-04-14 2012-10-03 株式会社Ｓｕｍｃｏ シリコンウェーハのゲッタリング効率を評価する方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI766599B (zh) * 2021-02-26 2022-06-01 昇陽國際半導體股份有限公司 晶圓再生製程

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US20080020496A1 (en) 2008-01-24
JP2007281119A (ja) 2007-10-25
US7892862B2 (en) 2011-02-22

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