JP5086092B2 - 大面積基板に好適な容量結合型ｒｆプラズマ反応器のインピーダンス整合 - Google Patents

大面積基板に好適な容量結合型ｒｆプラズマ反応器のインピーダンス整合 Download PDF

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Publication number
JP5086092B2
JP5086092B2 JP2007540474A JP2007540474A JP5086092B2 JP 5086092 B2 JP5086092 B2 JP 5086092B2 JP 2007540474 A JP2007540474 A JP 2007540474A JP 2007540474 A JP2007540474 A JP 2007540474A JP 5086092 B2 JP5086092 B2 JP 5086092B2
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Japan
Prior art keywords
impedance
metal plate
plasma
electrically connected
plasma reactor
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Expired - Fee Related
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JP2007540474A
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English (en)
Japanese (ja)
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JP2008520091A5 (enExample
JP2008520091A (ja
Inventor
ベリンガー，アンディー
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TEL Solar AG
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Oerlikon Solar AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Multi-Conductor Connections (AREA)
JP2007540474A 2004-11-12 2005-11-11 大面積基板に好適な容量結合型ｒｆプラズマ反応器のインピーダンス整合 Expired - Fee Related JP5086092B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62778404P 2004-11-12 2004-11-12
US60/627,784 2004-11-12
PCT/CH2005/000669 WO2006050632A2 (en) 2004-11-12 2005-11-11 Impedance matching of a capacitively coupled rf plasma reactor suitable for large area substrates

Publications (3)

Publication Number Publication Date
JP2008520091A JP2008520091A (ja) 2008-06-12
JP2008520091A5 JP2008520091A5 (enExample) 2008-11-27
JP5086092B2 true JP5086092B2 (ja) 2012-11-28

Family

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Family Applications (1)

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JP2007540474A Expired - Fee Related JP5086092B2 (ja) 2004-11-12 2005-11-11 大面積基板に好適な容量結合型ｒｆプラズマ反応器のインピーダンス整合

Country Status (10)

Country Link
US (1) US20070252529A1 (enExample)
EP (1) EP1812949B1 (enExample)
JP (1) JP5086092B2 (enExample)
KR (1) KR101107393B1 (enExample)
CN (1) CN101057310B (enExample)
AT (1) ATE473513T1 (enExample)
AU (1) AU2005304253B8 (enExample)
DE (1) DE602005022221D1 (enExample)
TW (1) TW200625396A (enExample)
WO (1) WO2006050632A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915613B1 (ko) * 2007-06-26 2009-09-07 삼성전자주식회사 펄스 플라즈마 매칭시스템 및 그 방법
KR100979186B1 (ko) 2007-10-22 2010-08-31 다이나믹솔라디자인 주식회사 용량 결합 플라즈마 반응기
TWI440405B (zh) * 2007-10-22 2014-06-01 New Power Plasma Co Ltd 電容式耦合電漿反應器
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US8578879B2 (en) * 2009-07-29 2013-11-12 Applied Materials, Inc. Apparatus for VHF impedance match tuning
CN102550130A (zh) * 2009-08-31 2012-07-04 朗姆研究公司 用于执行等离子体约束的多外围环装置
CN102487572B (zh) * 2010-12-02 2015-06-24 理想能源设备(上海)有限公司 等离子加工装置
TWI455172B (zh) * 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
CN102686004B (zh) * 2011-03-17 2015-05-13 中微半导体设备(上海)有限公司 用于等离子体发生器的可控制谐波的射频系统
US8932429B2 (en) * 2012-02-23 2015-01-13 Lam Research Corporation Electronic knob for tuning radial etch non-uniformity at VHF frequencies
CN102695353B (zh) * 2012-05-31 2015-08-12 浙江工商大学 利用高电压产生气体等离子放电基本单元及反应器
CN104685982B (zh) 2012-08-27 2019-07-30 伟巴斯特充电系统公司 便携式电动交通工具供电设备
CN103794895B (zh) * 2012-10-30 2016-02-24 新奥光伏能源有限公司 一种射频电源接入器
CN103388134B (zh) * 2013-07-22 2016-05-18 北京工业大学 容性耦合等离子体增强化学气相沉积制备厚度均匀薄膜的方法
CN103454489B (zh) * 2013-09-12 2016-09-21 清华大学 匹配网络的损耗功率标定方法及系统
US20180175819A1 (en) * 2016-12-16 2018-06-21 Lam Research Corporation Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor
US10536130B2 (en) 2017-08-29 2020-01-14 Mks Instruments, Inc. Balancing RF circuit and control for a cross-coupled SIMO distribution network
KR20210099153A (ko) * 2018-12-21 2021-08-11 에바텍 아크티엔게젤샤프트 하나 이상의 기판을 진공 플라즈마 처리하거나 기판을 제조하기 위한 진공 처리 장치 및 방법
US11107661B2 (en) * 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3143594A (en) * 1960-07-13 1964-08-04 Samuel E Derby Demountable multiple stage ultra-high vacuum system
US3471396A (en) * 1967-04-10 1969-10-07 Ibm R.f. cathodic sputtering apparatus having an electrically conductive housing
DE2939167A1 (de) * 1979-08-21 1981-04-02 Coulter Systems Corp., Bedford, Mass. Vorrichtung und verfahren zur leistungszufuehrung an eine von dem entladungsplasma einer zerstaeubungsvorrichtung gebildeten last
JPH0354825A (ja) * 1989-07-21 1991-03-08 Tokyo Electron Ltd プラズマ処理装置
JPH0685542A (ja) * 1992-09-03 1994-03-25 Hitachi Metals Ltd 周波数可変マイクロ波発振器
US5981899A (en) * 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
JP2961103B1 (ja) * 1998-04-28 1999-10-12 三菱重工業株式会社 プラズマ化学蒸着装置
US6395095B1 (en) * 1999-06-15 2002-05-28 Tokyo Electron Limited Process apparatus and method for improved plasma processing of a substrate
JP2002316040A (ja) * 2001-04-24 2002-10-29 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
TW200300650A (en) * 2001-11-27 2003-06-01 Alps Electric Co Ltd Plasma processing apparatus
JP4216054B2 (ja) * 2001-11-27 2009-01-28 アルプス電気株式会社 プラズマ処理装置及びその運転方法
JP4370789B2 (ja) * 2002-07-12 2009-11-25 東京エレクトロン株式会社 プラズマ処理装置及び可変インピーダンス手段の校正方法

Also Published As

Publication number Publication date
DE602005022221D1 (de) 2010-08-19
EP1812949A2 (en) 2007-08-01
EP1812949B1 (en) 2010-07-07
CN101057310A (zh) 2007-10-17
KR20070099526A (ko) 2007-10-09
WO2006050632A2 (en) 2006-05-18
US20070252529A1 (en) 2007-11-01
AU2005304253B2 (en) 2010-12-23
AU2005304253A1 (en) 2006-05-18
CN101057310B (zh) 2010-11-03
JP2008520091A (ja) 2008-06-12
WO2006050632A3 (en) 2006-07-27
AU2005304253B8 (en) 2011-01-20
KR101107393B1 (ko) 2012-01-19
TW200625396A (en) 2006-07-16
ATE473513T1 (de) 2010-07-15

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