JP5084724B2 - 放電速度制御を備える不揮発性メモリを有する集積回路及び放電速度制御方法 - Google Patents

放電速度制御を備える不揮発性メモリを有する集積回路及び放電速度制御方法 Download PDF

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Publication number
JP5084724B2
JP5084724B2 JP2008509987A JP2008509987A JP5084724B2 JP 5084724 B2 JP5084724 B2 JP 5084724B2 JP 2008509987 A JP2008509987 A JP 2008509987A JP 2008509987 A JP2008509987 A JP 2008509987A JP 5084724 B2 JP5084724 B2 JP 5084724B2
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Japan
Prior art keywords
current
array
memory cell
discharge rate
discharge
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Expired - Lifetime
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JP2008509987A
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Japanese (ja)
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JP2008541325A (ja
JP2008541325A5 (enExample
Inventor
プラサンナ ゴゴイ、ビシュヌ
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NXP USA Inc
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NXP USA Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
JP2008509987A 2005-05-02 2005-10-14 放電速度制御を備える不揮発性メモリを有する集積回路及び放電速度制御方法 Expired - Lifetime JP5084724B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/120,270 US7272053B2 (en) 2004-11-18 2005-05-02 Integrated circuit having a non-volatile memory with discharge rate control and method therefor
US11/120,270 2005-05-02
PCT/US2005/037070 WO2006118601A1 (en) 2005-05-02 2005-10-14 Integrated circuit having a non-volatile memory with discharge rate control and method therefor

Publications (3)

Publication Number Publication Date
JP2008541325A JP2008541325A (ja) 2008-11-20
JP2008541325A5 JP2008541325A5 (enExample) 2009-01-08
JP5084724B2 true JP5084724B2 (ja) 2012-11-28

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JP2008509987A Expired - Lifetime JP5084724B2 (ja) 2005-05-02 2005-10-14 放電速度制御を備える不揮発性メモリを有する集積回路及び放電速度制御方法

Country Status (3)

Country Link
US (1) US7272053B2 (enExample)
JP (1) JP5084724B2 (enExample)
WO (1) WO2006118601A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7532496B1 (en) * 2007-02-21 2009-05-12 National Semiconductor Corporation System and method for providing a low voltage low power EPROM based on gate oxide breakdown
US7859340B2 (en) * 2007-03-30 2010-12-28 Qualcomm Incorporated Metal-oxide-semiconductor circuit designs and methods for operating same
US7808827B2 (en) * 2007-11-06 2010-10-05 Spansion Llc Controlled bit line discharge for channel erases in nonvolatile memory
TWI358067B (en) * 2007-12-19 2012-02-11 Powerchip Technology Corp Integrated circuits and discharge circuits
JP5235400B2 (ja) * 2007-12-20 2013-07-10 三星電子株式会社 放電回路
JP2010079977A (ja) * 2008-09-25 2010-04-08 Toppan Printing Co Ltd 定電流型電源回路を有する不揮発性半導体メモリ装置
US7944281B2 (en) * 2008-12-12 2011-05-17 Mosys, Inc. Constant reference cell current generator for non-volatile memories
JP2010262696A (ja) * 2009-04-30 2010-11-18 Toshiba Corp Ｎａｎｄ型フラッシュメモリ
IT1400967B1 (it) 2010-06-15 2013-07-05 St Microelectronics Srl Dispositivo di memoria non volatile con circuito di riconnessione
IT1400968B1 (it) 2010-06-15 2013-07-05 St Microelectronics Srl Dispositivo di memoria non-volatile con scarica controllata
US8553463B1 (en) 2011-03-21 2013-10-08 Lattice Semiconductor Corporation Voltage discharge circuit having divided discharge current
US8830776B1 (en) 2013-03-15 2014-09-09 Freescale Semiconductor, Inc. Negative charge pump regulation
KR102173431B1 (ko) 2014-05-02 2020-11-03 삼성전자주식회사 동작 전류가 감소된 메모리 장치
US9590504B2 (en) 2014-09-30 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Flipped gate current reference and method of using
US11563373B2 (en) 2020-11-19 2023-01-24 Stmicroelectronics International N.V. Circuit and method for controlled discharge of a high (positive or negative) voltage charge pump

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US4750078A (en) 1987-06-15 1988-06-07 Motorola, Inc. Semiconductor protection circuit having both positive and negative high voltage protection
JP3204666B2 (ja) * 1990-11-21 2001-09-04 株式会社東芝 不揮発性半導体記憶装置
JP3409404B2 (ja) * 1993-12-27 2003-05-26 富士通株式会社 フラッシュ・メモリ
EP0668593B1 (en) * 1994-02-21 2001-09-26 STMicroelectronics S.r.l. Regulation circuit and method for the erasing phase of non-volatile memory cells
US5701090A (en) 1994-11-15 1997-12-23 Mitsubishi Denki Kabushiki Kaisha Data output circuit with reduced output noise
EP0757356B1 (en) 1995-07-31 2001-06-06 STMicroelectronics S.r.l. Flash EEPROM with controlled discharge time of the word lines and source potentials after erase
US5732020A (en) 1996-06-12 1998-03-24 Altera Corporation Circuitry and methods for erasing EEPROM transistors
JP3191861B2 (ja) 1997-01-30 2001-07-23 日本電気株式会社 不揮発性半導体メモリ装置及びその消去方法
JPH1145588A (ja) * 1997-07-25 1999-02-16 Nec Corp 不揮発性半導体記憶装置
JP3892612B2 (ja) 1999-04-09 2007-03-14 株式会社東芝 半導体装置
JP3633853B2 (ja) * 2000-06-09 2005-03-30 Ｎｅｃエレクトロニクス株式会社 フラッシュメモリの消去動作制御方法およびフラッシュメモリの消去動作制御装置
US6445518B1 (en) * 2000-11-28 2002-09-03 Semiconductor Technologies & Instruments, Inc. Three dimensional lead inspection system
KR100385230B1 (ko) * 2000-12-28 2003-05-27 삼성전자주식회사 불휘발성 반도체 메모리 장치의 프로그램 방법
US6438032B1 (en) 2001-03-27 2002-08-20 Micron Telecommunications, Inc. Non-volatile memory with peak current noise reduction
US6714458B2 (en) 2002-02-11 2004-03-30 Micron Technology, Inc. High voltage positive and negative two-phase discharge system and method for channel erase in flash memory devices
US6667910B2 (en) 2002-05-10 2003-12-23 Micron Technology, Inc. Method and apparatus for discharging an array well in a flash memory device

Also Published As

Publication number Publication date
US20060104122A1 (en) 2006-05-18
JP2008541325A (ja) 2008-11-20
US7272053B2 (en) 2007-09-18
WO2006118601A1 (en) 2006-11-09

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