JP5084173B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5084173B2
JP5084173B2 JP2006137158A JP2006137158A JP5084173B2 JP 5084173 B2 JP5084173 B2 JP 5084173B2 JP 2006137158 A JP2006137158 A JP 2006137158A JP 2006137158 A JP2006137158 A JP 2006137158A JP 5084173 B2 JP5084173 B2 JP 5084173B2
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Japan
Prior art keywords
metal
substrate
layer
film
oxide film
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Expired - Fee Related
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JP2006137158A
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English (en)
Japanese (ja)
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JP2007013108A5 (enrdf_load_stackoverflow
JP2007013108A (ja
Inventor
香 荻田
友子 田村
純矢 丸山
浩二 大力
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006137158A priority Critical patent/JP5084173B2/ja
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Publication of JP2007013108A5 publication Critical patent/JP2007013108A5/ja
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Publication of JP5084173B2 publication Critical patent/JP5084173B2/ja
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  • Thin Film Transistor (AREA)
JP2006137158A 2005-05-31 2006-05-17 半導体装置の作製方法 Expired - Fee Related JP5084173B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006137158A JP5084173B2 (ja) 2005-05-31 2006-05-17 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005160730 2005-05-31
JP2005160730 2005-05-31
JP2006137158A JP5084173B2 (ja) 2005-05-31 2006-05-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2007013108A JP2007013108A (ja) 2007-01-18
JP2007013108A5 JP2007013108A5 (enrdf_load_stackoverflow) 2009-06-18
JP5084173B2 true JP5084173B2 (ja) 2012-11-28

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JP2006137158A Expired - Fee Related JP5084173B2 (ja) 2005-05-31 2006-05-17 半導体装置の作製方法

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JP (1) JP5084173B2 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012057194A1 (ja) * 2010-10-27 2012-05-03 住友化学株式会社 有機薄膜トランジスタの製造方法及び該方法で製造された有機薄膜トランジスタ
WO2012057196A1 (ja) * 2010-10-27 2012-05-03 住友化学株式会社 電荷注入特性が高い有機薄膜トランジスタ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3629716B2 (ja) * 1994-03-02 2005-03-16 セイコーエプソン株式会社 配線膜の製造方法、液晶表示装置の製造方法、及び半導体装置の製造方法
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2001282139A (ja) * 2000-01-27 2001-10-12 Sharp Corp アクティブマトリックス基板およびその製造方法、並びに、液晶表示装置
JP2002348680A (ja) * 2001-05-22 2002-12-04 Sharp Corp 金属膜パターンおよびその製造方法
JP2003255857A (ja) * 2002-02-28 2003-09-10 Nippon Hoso Kyokai <Nhk> 有機ｅｌディスプレイ
JP2003158249A (ja) * 2002-08-09 2003-05-30 Seiko Epson Corp アクティブマトリクス基板及びアクティブマトリクス基板の製造方法
JP2004111835A (ja) * 2002-09-20 2004-04-08 Canon Inc 圧電体素子の製造方法、圧電体素子及びインクジェット式記録ヘッド
JP5046464B2 (ja) * 2002-12-18 2012-10-10 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
JP4637477B2 (ja) * 2002-12-27 2011-02-23 株式会社半導体エネルギー研究所 剥離方法
JP2004247373A (ja) * 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 半導体装置
JP4247820B2 (ja) * 2003-02-12 2009-04-02 富士フイルム株式会社 光電変換素子の作製方法及び光電変換素子

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JP2007013108A (ja) 2007-01-18

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