JP5078873B2 - 電気的応答デバイス - Google Patents
電気的応答デバイス Download PDFInfo
- Publication number
- JP5078873B2 JP5078873B2 JP2008505449A JP2008505449A JP5078873B2 JP 5078873 B2 JP5078873 B2 JP 5078873B2 JP 2008505449 A JP2008505449 A JP 2008505449A JP 2008505449 A JP2008505449 A JP 2008505449A JP 5078873 B2 JP5078873 B2 JP 5078873B2
- Authority
- JP
- Japan
- Prior art keywords
- electrically responsive
- substrate
- electrode
- electrical response
- responsive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004044 response Effects 0.000 title claims description 101
- 239000000463 material Substances 0.000 claims description 329
- 239000007772 electrode material Substances 0.000 claims description 143
- 239000000758 substrate Substances 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 74
- 239000012530 fluid Substances 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000011263 electroactive material Substances 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 19
- 239000002131 composite material Substances 0.000 claims description 15
- 239000012491 analyte Substances 0.000 claims description 12
- 108091027981 Response element Proteins 0.000 claims description 10
- 239000000945 filler Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 238000012360 testing method Methods 0.000 claims description 7
- 230000005574 cross-species transmission Effects 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000012806 monitoring device Methods 0.000 claims description 2
- 230000010399 physical interaction Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 description 38
- 239000007788 liquid Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 230000000875 corresponding effect Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 238000011068 loading method Methods 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 238000010897 surface acoustic wave method Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000000725 suspension Substances 0.000 description 6
- 230000002745 absorbent Effects 0.000 description 5
- 239000002250 absorbent Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 239000012620 biological material Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000000382 optic material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 235000019687 Lamb Nutrition 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- DYAHQFWOVKZOOW-UHFFFAOYSA-N Sarin Chemical compound CC(C)OP(C)(F)=O DYAHQFWOVKZOOW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- LOKCTEFSRHRXRJ-UHFFFAOYSA-I dipotassium trisodium dihydrogen phosphate hydrogen phosphate dichloride Chemical compound P(=O)(O)(O)[O-].[K+].P(=O)(O)([O-])[O-].[Na+].[Na+].[Cl-].[K+].[Cl-].[Na+] LOKCTEFSRHRXRJ-UHFFFAOYSA-I 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000002953 phosphate buffered saline Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000003380 quartz crystal microbalance Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000012488 sample solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/025—Change of phase or condition
- G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N9/00—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
- G01N9/002—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity using variation of the resonant frequency of an element vibrating in contact with the material submitted to analysis
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Manufacturing & Machinery (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Micromachines (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66893305P | 2005-04-06 | 2005-04-06 | |
| US60/668,933 | 2005-04-06 | ||
| PCT/US2006/012491 WO2006107961A2 (en) | 2005-04-06 | 2006-04-05 | Electrically responsive device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008536395A JP2008536395A (ja) | 2008-09-04 |
| JP2008536395A5 JP2008536395A5 (enExample) | 2009-05-21 |
| JP5078873B2 true JP5078873B2 (ja) | 2012-11-21 |
Family
ID=36717063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008505449A Expired - Fee Related JP5078873B2 (ja) | 2005-04-06 | 2006-04-05 | 電気的応答デバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8536037B2 (enExample) |
| EP (1) | EP1872474A2 (enExample) |
| JP (1) | JP5078873B2 (enExample) |
| KR (1) | KR101245296B1 (enExample) |
| WO (1) | WO2006107961A2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10224567B4 (de) * | 2002-06-03 | 2014-10-23 | Boehringer Ingelheim Vetmedica Gmbh | Sensor-Anordnung und Verfahren zum Betreiben einer Sensor-Anordnung |
| US7497133B2 (en) | 2004-05-24 | 2009-03-03 | Drexel University | All electric piezoelectric finger sensor (PEFS) for soft material stiffness measurement |
| CA2637930C (en) * | 2006-01-23 | 2016-09-06 | Drexel University | Self-exciting, self-sensing piezoelectric cantilever sensor |
| US8171795B1 (en) | 2006-01-23 | 2012-05-08 | Drexel University | Self-exciting, self-sensing piezoelectric cantilever sensor for detection of airborne analytes directly in air |
| WO2007133619A1 (en) * | 2006-05-10 | 2007-11-22 | Drexel University | Molecular control of surface coverage |
| US8481335B2 (en) * | 2006-11-27 | 2013-07-09 | Drexel University | Specificity and sensitivity enhancement in cantilever sensing |
| EP2100125A4 (en) | 2006-11-28 | 2012-02-15 | Univ Drexel | MICROPORTE-TO-FALSE PIEZOELECTRIC SENSORS FOR BIODETECTION |
| US7992431B2 (en) | 2006-11-28 | 2011-08-09 | Drexel University | Piezoelectric microcantilevers and uses in atomic force microscopy |
| CA2677196A1 (en) | 2007-02-01 | 2008-09-12 | Drexel University | A hand-held phase-shift detector for sensor applications |
| US7892759B2 (en) | 2007-02-16 | 2011-02-22 | Drexel University | Enhanced sensitivity of a cantilever sensor via specific bindings |
| US8512947B2 (en) | 2007-02-16 | 2013-08-20 | Drexel University | Detection of nucleic acids using a cantilever sensor |
| FR2916271B1 (fr) * | 2007-05-14 | 2009-08-28 | St Microelectronics Sa | Circuit electronique permettant la mesure de masse de materiau biologique et procede de fabrication |
| US7993854B2 (en) * | 2007-05-30 | 2011-08-09 | Drexel University | Detection and quantification of biomarkers via a piezoelectric cantilever sensor |
| US20090120168A1 (en) * | 2007-11-08 | 2009-05-14 | Schlumberger Technology Corporation | Microfluidic downhole density and viscosity sensor |
| WO2009079154A2 (en) | 2007-11-23 | 2009-06-25 | Drexel University | Lead-free piezoelectric ceramic films and a method for making thereof |
| US8236508B2 (en) * | 2008-01-29 | 2012-08-07 | Drexel University | Detecting and measuring live pathogens utilizing a mass detection device |
| US8741663B2 (en) | 2008-03-11 | 2014-06-03 | Drexel University | Enhanced detection sensitivity with piezoelectric sensors |
| CN102066928B (zh) | 2008-05-16 | 2015-08-05 | 德瑞索大学 | 评估组织的系统和方法 |
| IT1392736B1 (it) | 2008-12-09 | 2012-03-16 | St Microelectronics Rousset | Dispositivo a microbilancia torsionale integrata in tecnologia mems e relativo processo di fabbricazione |
| US8722427B2 (en) * | 2009-10-08 | 2014-05-13 | Drexel University | Determination of dissociation constants using piezoelectric microcantilevers |
| US20110086368A1 (en) * | 2009-10-08 | 2011-04-14 | Drexel University | Method for immune response detection |
| CN104596906B (zh) * | 2015-01-16 | 2017-08-25 | 上海大学 | 多测量头的水氧透气率测量系统 |
| CN106556626B (zh) * | 2015-01-22 | 2019-04-26 | 江西师范大学 | 基于纳米材料的传感器的形成方法 |
| JP6945357B2 (ja) * | 2017-06-08 | 2021-10-06 | 東京エレクトロン株式会社 | 制御装置。 |
| KR102321513B1 (ko) | 2018-08-21 | 2021-11-02 | 주식회사 엘지에너지솔루션 | 버스바 플레이트를 포함하는 배터리 모듈 |
| CN109450401B (zh) * | 2018-09-20 | 2022-03-18 | 天津大学 | 柔性单晶兰姆波谐振器及其形成方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4278492A (en) * | 1980-01-21 | 1981-07-14 | Hewlett-Packard Company | Frequency trimming of surface acoustic wave devices |
| US4364016A (en) * | 1980-11-03 | 1982-12-14 | Sperry Corporation | Method for post fabrication frequency trimming of surface acoustic wave devices |
| US5189914A (en) * | 1988-02-29 | 1993-03-02 | The Regents Of The University Of California | Plate-mode ultrasonic sensor |
| WO1989008336A1 (en) * | 1988-02-29 | 1989-09-08 | The Regents Of The University Of California | Plate-mode ultrasonic sensor |
| US5490034A (en) * | 1989-01-13 | 1996-02-06 | Kopin Corporation | SOI actuators and microsensors |
| JPH0325343A (ja) * | 1989-06-23 | 1991-02-04 | Nec Corp | センサ装置 |
| US4952832A (en) * | 1989-10-24 | 1990-08-28 | Sumitomo Electric Industries, Ltd. | Surface acoustic wave device |
| JPH0497611A (ja) * | 1990-08-15 | 1992-03-30 | Clarion Co Ltd | 弾性表面波素子の製造方法 |
| JPH04199906A (ja) * | 1990-11-29 | 1992-07-21 | Kokusai Electric Co Ltd | 弾性表面波共振子 |
| DE59305466D1 (de) * | 1992-04-30 | 1997-03-27 | Fraunhofer Ges Forschung | Sensor mit hoher empfindlichkeit |
| US5836203A (en) * | 1996-10-21 | 1998-11-17 | Sandia Corporation | Magnetically excited flexural plate wave apparatus |
| US6091182A (en) * | 1996-11-07 | 2000-07-18 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive element |
| JP3470031B2 (ja) * | 1997-12-22 | 2003-11-25 | 京セラ株式会社 | 弾性表面波装置の製造方法 |
| US6323580B1 (en) * | 1999-04-28 | 2001-11-27 | The Charles Stark Draper Laboratory, Inc. | Ferroic transducer |
| WO2001071336A1 (en) * | 2000-03-20 | 2001-09-27 | The Charles Stark Draper Laboratory, Inc. | Flexural plate wave sensor and array |
| US6455980B1 (en) * | 2000-08-28 | 2002-09-24 | The Charles Stark Draper Laboratory, Inc. | Resonator with preferred oscillation mode |
| US6506620B1 (en) * | 2000-11-27 | 2003-01-14 | Microscan Systems Incorporated | Process for manufacturing micromechanical and microoptomechanical structures with backside metalization |
| EP1364398A4 (en) * | 2001-01-02 | 2011-11-30 | Draper Lab Charles S | METHOD FOR MICRO-PRODUCING STRUCTURES USING SILICON-ON-ISOLATOR MATERIAL |
| US6946314B2 (en) * | 2001-01-02 | 2005-09-20 | The Charles Stark Draper Laboratory, Inc. | Method for microfabricating structures using silicon-on-insulator material |
| US7038353B2 (en) * | 2001-01-10 | 2006-05-02 | Seiko Epson Corporation | Surface acoustic wave device and method of manufacturing the same |
| US6511915B2 (en) * | 2001-03-26 | 2003-01-28 | Boston Microsystems, Inc. | Electrochemical etching process |
| AU2002322938A1 (en) * | 2001-08-28 | 2003-03-10 | Scott Ballantyne | Electromagnetic piezoelectric acoustic sensor |
| JP4281327B2 (ja) * | 2002-10-28 | 2009-06-17 | 株式会社村田製作所 | 表面波装置の製造方法 |
| JP4345328B2 (ja) * | 2003-03-13 | 2009-10-14 | セイコーエプソン株式会社 | 弾性表面波デバイス及びその製造方法 |
| US7045407B2 (en) * | 2003-12-30 | 2006-05-16 | Intel Corporation | Amorphous etch stop for the anisotropic etching of substrates |
-
2006
- 2006-04-05 JP JP2008505449A patent/JP5078873B2/ja not_active Expired - Fee Related
- 2006-04-05 US US11/398,308 patent/US8536037B2/en not_active Expired - Fee Related
- 2006-04-05 KR KR1020077022508A patent/KR101245296B1/ko not_active Expired - Fee Related
- 2006-04-05 WO PCT/US2006/012491 patent/WO2006107961A2/en not_active Ceased
- 2006-04-05 EP EP06749241A patent/EP1872474A2/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US20060228657A1 (en) | 2006-10-12 |
| WO2006107961A2 (en) | 2006-10-12 |
| KR101245296B1 (ko) | 2013-03-19 |
| WO2006107961A3 (en) | 2007-04-12 |
| KR20080007552A (ko) | 2008-01-22 |
| EP1872474A2 (en) | 2008-01-02 |
| US8536037B2 (en) | 2013-09-17 |
| JP2008536395A (ja) | 2008-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5078873B2 (ja) | 電気的応答デバイス | |
| EP3377886B1 (en) | Acoustic resonator with reduced mechanical clamping of an active region for enhanced shear mode response | |
| US7667369B2 (en) | High sensitivity microsensors based on flexure induced frequency effects | |
| WO2000026636A1 (en) | Qcm sensor | |
| US10393704B2 (en) | Multi-frequency BAW mixing and sensing system and method | |
| CN102209890B (zh) | 检测传感器、检测传感器的振子 | |
| US10352904B2 (en) | Acoustic resonator devices and methods providing patterned functionalization areas | |
| US11549913B2 (en) | Shear-mode chemical/physical sensor for liquid environment sensing and method for producing the same | |
| US10812045B2 (en) | BAW sensor with enhanced surface area active region | |
| JPH05240762A (ja) | 表面横波装置 | |
| JP2008536395A5 (enExample) | ||
| WO2017106489A2 (en) | Temperature compensation and operational configuration for bulk acoustic wave resonator devices | |
| WO2011019702A1 (en) | Mems in-plane resonators | |
| JP2018533310A (ja) | 音響共振器装置、ならびに気密性および表面機能化を提供する製造方法 | |
| US20140182361A1 (en) | Piezoresistive nems array network | |
| KR100706561B1 (ko) | 마이크로 음향 센서 장치를 작동시키기 위한 방법 및 장치 | |
| US9164051B2 (en) | Electrically responsive device | |
| JP4228993B2 (ja) | フローセル型qcmセンサ | |
| JP3162376B2 (ja) | 分析装置 | |
| JP2008180668A (ja) | ラム波型高周波センサデバイス | |
| KR100336084B1 (ko) | 큐씨엠 센서 | |
| Mahdavi | Resonant MEMS Piezoelectric Balances and Strain-Gauges | |
| US9638616B2 (en) | Devices and methods for gravimetric sensing in liquid environments | |
| Guirardel et al. | On-chip self-sensing function of 4/spl times/4 matrix micromachined resonating piezoelectric membranes for mass detection applications [biosensor/chemical sensor applications] | |
| Liao | CMOS-MEMS Membrane Gravimetric Biosensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090406 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090406 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20110913 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111215 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120104 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120403 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120410 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120501 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120510 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120601 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120608 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120702 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120730 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120828 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150907 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |