KR101245296B1 - 전기 응답 디바이스 - Google Patents

전기 응답 디바이스 Download PDF

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Publication number
KR101245296B1
KR101245296B1 KR1020077022508A KR20077022508A KR101245296B1 KR 101245296 B1 KR101245296 B1 KR 101245296B1 KR 1020077022508 A KR1020077022508 A KR 1020077022508A KR 20077022508 A KR20077022508 A KR 20077022508A KR 101245296 B1 KR101245296 B1 KR 101245296B1
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KR
South Korea
Prior art keywords
electrical response
delete delete
electrode material
electrode
substrate
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KR1020077022508A
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English (en)
Korean (ko)
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KR20080007552A (ko
Inventor
브렛 피. 마스터스
마이클 에프. 밀러
Original Assignee
바이오스케일, 아이엔씨.
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/02—Indexing codes associated with the analysed material
    • G01N2291/025—Change of phase or condition
    • G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N9/00—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity
    • G01N9/002—Investigating density or specific gravity of materials; Analysing materials by determining density or specific gravity using variation of the resonant frequency of an element vibrating in contact with the material submitted to analysis

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Manufacturing & Machinery (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Micromachines (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
KR1020077022508A 2005-04-06 2006-04-05 전기 응답 디바이스 Expired - Fee Related KR101245296B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US66893305P 2005-04-06 2005-04-06
US60/668,933 2005-04-06
PCT/US2006/012491 WO2006107961A2 (en) 2005-04-06 2006-04-05 Electrically responsive device

Publications (2)

Publication Number Publication Date
KR20080007552A KR20080007552A (ko) 2008-01-22
KR101245296B1 true KR101245296B1 (ko) 2013-03-19

Family

ID=36717063

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077022508A Expired - Fee Related KR101245296B1 (ko) 2005-04-06 2006-04-05 전기 응답 디바이스

Country Status (5)

Country Link
US (1) US8536037B2 (enExample)
EP (1) EP1872474A2 (enExample)
JP (1) JP5078873B2 (enExample)
KR (1) KR101245296B1 (enExample)
WO (1) WO2006107961A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11626648B2 (en) 2018-08-21 2023-04-11 Lg Energy Solution, Ltd. Battery module including bus bar plate

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10224567B4 (de) * 2002-06-03 2014-10-23 Boehringer Ingelheim Vetmedica Gmbh Sensor-Anordnung und Verfahren zum Betreiben einer Sensor-Anordnung
US7497133B2 (en) 2004-05-24 2009-03-03 Drexel University All electric piezoelectric finger sensor (PEFS) for soft material stiffness measurement
CA2637930C (en) * 2006-01-23 2016-09-06 Drexel University Self-exciting, self-sensing piezoelectric cantilever sensor
US8171795B1 (en) 2006-01-23 2012-05-08 Drexel University Self-exciting, self-sensing piezoelectric cantilever sensor for detection of airborne analytes directly in air
WO2007133619A1 (en) * 2006-05-10 2007-11-22 Drexel University Molecular control of surface coverage
US8481335B2 (en) * 2006-11-27 2013-07-09 Drexel University Specificity and sensitivity enhancement in cantilever sensing
EP2100125A4 (en) 2006-11-28 2012-02-15 Univ Drexel MICROPORTE-TO-FALSE PIEZOELECTRIC SENSORS FOR BIODETECTION
US7992431B2 (en) 2006-11-28 2011-08-09 Drexel University Piezoelectric microcantilevers and uses in atomic force microscopy
CA2677196A1 (en) 2007-02-01 2008-09-12 Drexel University A hand-held phase-shift detector for sensor applications
US7892759B2 (en) 2007-02-16 2011-02-22 Drexel University Enhanced sensitivity of a cantilever sensor via specific bindings
US8512947B2 (en) 2007-02-16 2013-08-20 Drexel University Detection of nucleic acids using a cantilever sensor
FR2916271B1 (fr) * 2007-05-14 2009-08-28 St Microelectronics Sa Circuit electronique permettant la mesure de masse de materiau biologique et procede de fabrication
US7993854B2 (en) * 2007-05-30 2011-08-09 Drexel University Detection and quantification of biomarkers via a piezoelectric cantilever sensor
US20090120168A1 (en) * 2007-11-08 2009-05-14 Schlumberger Technology Corporation Microfluidic downhole density and viscosity sensor
WO2009079154A2 (en) 2007-11-23 2009-06-25 Drexel University Lead-free piezoelectric ceramic films and a method for making thereof
US8236508B2 (en) * 2008-01-29 2012-08-07 Drexel University Detecting and measuring live pathogens utilizing a mass detection device
US8741663B2 (en) 2008-03-11 2014-06-03 Drexel University Enhanced detection sensitivity with piezoelectric sensors
CN102066928B (zh) 2008-05-16 2015-08-05 德瑞索大学 评估组织的系统和方法
IT1392736B1 (it) 2008-12-09 2012-03-16 St Microelectronics Rousset Dispositivo a microbilancia torsionale integrata in tecnologia mems e relativo processo di fabbricazione
US8722427B2 (en) * 2009-10-08 2014-05-13 Drexel University Determination of dissociation constants using piezoelectric microcantilevers
US20110086368A1 (en) * 2009-10-08 2011-04-14 Drexel University Method for immune response detection
CN104596906B (zh) * 2015-01-16 2017-08-25 上海大学 多测量头的水氧透气率测量系统
CN106556626B (zh) * 2015-01-22 2019-04-26 江西师范大学 基于纳米材料的传感器的形成方法
JP6945357B2 (ja) * 2017-06-08 2021-10-06 東京エレクトロン株式会社 制御装置。
CN109450401B (zh) * 2018-09-20 2022-03-18 天津大学 柔性单晶兰姆波谐振器及其形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278492A (en) 1980-01-21 1981-07-14 Hewlett-Packard Company Frequency trimming of surface acoustic wave devices
US20030020367A1 (en) 2001-01-10 2003-01-30 Yoshio Maeda Surface acoustic wave device and its manufacturing method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364016A (en) * 1980-11-03 1982-12-14 Sperry Corporation Method for post fabrication frequency trimming of surface acoustic wave devices
US5189914A (en) * 1988-02-29 1993-03-02 The Regents Of The University Of California Plate-mode ultrasonic sensor
WO1989008336A1 (en) * 1988-02-29 1989-09-08 The Regents Of The University Of California Plate-mode ultrasonic sensor
US5490034A (en) * 1989-01-13 1996-02-06 Kopin Corporation SOI actuators and microsensors
JPH0325343A (ja) * 1989-06-23 1991-02-04 Nec Corp センサ装置
US4952832A (en) * 1989-10-24 1990-08-28 Sumitomo Electric Industries, Ltd. Surface acoustic wave device
JPH0497611A (ja) * 1990-08-15 1992-03-30 Clarion Co Ltd 弾性表面波素子の製造方法
JPH04199906A (ja) * 1990-11-29 1992-07-21 Kokusai Electric Co Ltd 弾性表面波共振子
DE59305466D1 (de) * 1992-04-30 1997-03-27 Fraunhofer Ges Forschung Sensor mit hoher empfindlichkeit
US5836203A (en) * 1996-10-21 1998-11-17 Sandia Corporation Magnetically excited flexural plate wave apparatus
US6091182A (en) * 1996-11-07 2000-07-18 Ngk Insulators, Ltd. Piezoelectric/electrostrictive element
JP3470031B2 (ja) * 1997-12-22 2003-11-25 京セラ株式会社 弾性表面波装置の製造方法
US6323580B1 (en) * 1999-04-28 2001-11-27 The Charles Stark Draper Laboratory, Inc. Ferroic transducer
WO2001071336A1 (en) * 2000-03-20 2001-09-27 The Charles Stark Draper Laboratory, Inc. Flexural plate wave sensor and array
US6455980B1 (en) * 2000-08-28 2002-09-24 The Charles Stark Draper Laboratory, Inc. Resonator with preferred oscillation mode
US6506620B1 (en) * 2000-11-27 2003-01-14 Microscan Systems Incorporated Process for manufacturing micromechanical and microoptomechanical structures with backside metalization
EP1364398A4 (en) * 2001-01-02 2011-11-30 Draper Lab Charles S METHOD FOR MICRO-PRODUCING STRUCTURES USING SILICON-ON-ISOLATOR MATERIAL
US6946314B2 (en) * 2001-01-02 2005-09-20 The Charles Stark Draper Laboratory, Inc. Method for microfabricating structures using silicon-on-insulator material
US6511915B2 (en) * 2001-03-26 2003-01-28 Boston Microsystems, Inc. Electrochemical etching process
AU2002322938A1 (en) * 2001-08-28 2003-03-10 Scott Ballantyne Electromagnetic piezoelectric acoustic sensor
JP4281327B2 (ja) * 2002-10-28 2009-06-17 株式会社村田製作所 表面波装置の製造方法
JP4345328B2 (ja) * 2003-03-13 2009-10-14 セイコーエプソン株式会社 弾性表面波デバイス及びその製造方法
US7045407B2 (en) * 2003-12-30 2006-05-16 Intel Corporation Amorphous etch stop for the anisotropic etching of substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4278492A (en) 1980-01-21 1981-07-14 Hewlett-Packard Company Frequency trimming of surface acoustic wave devices
US20030020367A1 (en) 2001-01-10 2003-01-30 Yoshio Maeda Surface acoustic wave device and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11626648B2 (en) 2018-08-21 2023-04-11 Lg Energy Solution, Ltd. Battery module including bus bar plate

Also Published As

Publication number Publication date
JP5078873B2 (ja) 2012-11-21
US20060228657A1 (en) 2006-10-12
WO2006107961A2 (en) 2006-10-12
WO2006107961A3 (en) 2007-04-12
KR20080007552A (ko) 2008-01-22
EP1872474A2 (en) 2008-01-02
US8536037B2 (en) 2013-09-17
JP2008536395A (ja) 2008-09-04

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