JP5078444B2 - 半導体装置の製造方法、クリーニング方法及び基板処理装置 - Google Patents
半導体装置の製造方法、クリーニング方法及び基板処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 145
- 238000004140 cleaning Methods 0.000 title claims description 87
- 239000000758 substrate Substances 0.000 title claims description 83
- 238000000034 method Methods 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 239000007789 gas Substances 0.000 claims description 88
- 239000006227 byproduct Substances 0.000 claims description 52
- 229910052707 ruthenium Inorganic materials 0.000 claims description 27
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 11
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 7
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 6
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- 125000001153 fluoro group Chemical group F* 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 238000005755 formation reaction Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 15
- 239000007788 liquid Substances 0.000 description 15
- 238000012546 transfer Methods 0.000 description 14
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000006200 vaporizer Substances 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GJBJZRBUIDLGND-UHFFFAOYSA-N CC(=C[Ru](C1C=CC=C1)CC)C=C(C)C Chemical compound CC(=C[Ru](C1C=CC=C1)CC)C=C(C)C GJBJZRBUIDLGND-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910020323 ClF3 Inorganic materials 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical group 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- IUSPGFXRAJDYRG-UHFFFAOYSA-I pentafluororuthenium Chemical compound F[Ru](F)(F)(F)F IUSPGFXRAJDYRG-UHFFFAOYSA-I 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
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- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Description
本発明の実施形態においては、Ru(ルテニウム)膜又はRuO2(二酸化ルテニウム)膜をClF3(三フッ化塩素)を用いてガスクリーニングする。このガスクリーニングにおいては、Ru膜又はRuO2膜は、RuF5(五フッ化ルテニウム)やRuCl3(三塩化ルテニウム)等のフッ化物や塩化物として除去されると考えられる。このうちRuF5は常温では固体であり、沸点が227℃の物質である。
ゲート弁2が開かれると、シリコン基板1は搬送ロボット(図示せず)により、基板搬送口2aを通して処理室8内に搬入されて、下降時のヒータユニット4上部、すなわちサセプタ6から突出している突き上げピン3上に載置される(基板搬入工程)。ヒータユニット4を昇降装置12により定められた成膜位置(点線で示す位置)まで上昇させて、基板1を突上げピン3からサセプタ6上に移し変える。これにより基板1がサセプタ6上に載置される(基板載置工程)。
ゲート弁2が開かれると、ダミー基板1aが搬送ロボット(図示せず)により、基板搬送口2aを通して処理室8内に搬入されて、下降時のヒータユニット4上部、すなわちサセプタ6から突出している突き上げピン3上に載置される(ダミー基板搬入工程)。ヒータユニット4を昇降装置12により定められたクリーニング位置(点線で示す位置)まで上昇させて、ダミー基板1aを突上げピン3からサセプタ6上に移し変える。これによりダミー基板1aがサセプタ6上に載置される(ダミー基板載置工程)。なお、サセプタ6上にダミー基板1aを載置することで、クリーニングの際にサセプタ6の基板載置エリアを保護することができ、また、ヒータユニット4内部へのクリーニングガスの侵入を防止することができる。
6 サセプタ
8 処理室
9 排気管
9a 排気口
17 原料ガス供給管
18 クリーニングガス供給管
60 コントローラ
Claims (8)
- 処理室内に基板を搬入する工程と、
前記処理室内に原料ガスを供給して基板上にルテニウムを含む膜を成膜する工程と、
成膜後の基板を前記処理室内から搬出する工程と、
前記処理室内にフッ素原子または塩素原子を含むクリーニングガスを供給して前記処理室内に付着したルテニウムを含む堆積物を除去する工程と、前記クリーニングガスの供給を停止して前記処理室内を真空引きすることで、前記堆積物を除去する工程において除去されずに残った前記堆積物の表面を覆うように生成された副生成物を除去して、前記除去されずに残った前記堆積物の表面を露出させる工程と、を交互に複数回繰り返すことで、前記処理室内をクリーニングする工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記堆積物の除去は、熱化学反応により行われる請求項1に記載の半導体装置の製造方法。
- 前記クリーニングガスが、ClF 3 ガスである請求項1又は2に記載の半導体装置の製造方法。
- 前記ルテニウムを含む膜が、ルテニウム膜、酸化ルテニウム膜、またはルテニウム膜と酸化ルテニウム膜の積層膜である請求項1乃至3のいずれか1項に記載の半導体装置の製造方法。
- 前記副生成物の除去は、前記クリーニングガスの供給を停止して、前記処理室内に不活性ガスを供給しつつ前記処理室内を真空引きすることで行う請求項1乃至4のいずれか1項に記載の半導体装置の製造方法。
- 前記処理室内をクリーニングする際の前記処理室内の温度を250〜500℃とし、前記堆積物を除去する際の前記処理室内の圧力を665〜13300Paとし、前記副生成物を除去する際の前記処理室内の圧力を0.1〜100Paとする請求項1乃至5のいずれか1項に記載の半導体装置の製造方法。
- 処理室内に原料ガスを供給して基板上にルテニウムを含む膜を成膜する処理を行った後の前記処理室内にフッ素原子または塩素原子を含むクリーニングガスを供給して前記処理室内に付着したルテニウムを含む堆積物を除去する工程と、
前記クリーニングガスの供給を停止して前記処理室内を真空引きすることで、前記堆積物を除去する工程において除去されずに残った前記堆積物の表面を覆うように生成された副生成物を除去して、前記除去されずに残った前記堆積物の表面を露出させる工程と、
を交互に複数回繰り返すことで、前記処理室内をクリーニングするクリーニング方法。 - 基板を処理する処理室と、
前記処理室内にルテニウムを含む膜を成膜するための原料ガスを供給する原料ガス供給口と、
前記処理室内にフッ素原子または塩素原子を含むクリーニングガスを供給するクリーニングガス供給口と、
前記処理室内に前記クリーニングガスを供給して成膜時に前記処理室内に付着したルテニウムを含む堆積物を除去する処理と、前記クリーニングガスの供給を停止して前記処理室内を真空引きすることで、前記堆積物を除去する工程において除去されずに残った前記堆積物の表面を覆うように生成された副生成物を除去し、除去されずに残った前記堆積物の表面を露出させる処理と、を交互に複数回繰り返すことで、前記処理室内をクリーニングするように制御するコントローラと、
を有することを特徴とする基板処理装置。
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JP2007145870A JP5078444B2 (ja) | 2007-05-31 | 2007-05-31 | 半導体装置の製造方法、クリーニング方法及び基板処理装置 |
KR1020080049537A KR100989028B1 (ko) | 2007-05-31 | 2008-05-28 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
US12/155,221 US7709276B2 (en) | 2007-05-31 | 2008-05-30 | Manufacturing method of a semiconductor device and substrate processing apparatus |
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US7927993B2 (en) * | 2008-12-26 | 2011-04-19 | Texas Instruments Incorporated | Cross-contamination control for semiconductor process flows having metal comprising gate electrodes |
US20110088718A1 (en) * | 2009-10-16 | 2011-04-21 | Matheson Tri-Gas, Inc. | Chamber cleaning methods using fluorine containing cleaning compounds |
US9145605B2 (en) | 2010-09-29 | 2015-09-29 | Ulvac, Inc. | Thin-film forming method and thin-film forming apparatus |
JP6055637B2 (ja) * | 2012-09-20 | 2016-12-27 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム |
TW201443984A (zh) * | 2013-02-05 | 2014-11-16 | Hitachi Int Electric Inc | 清洗方法、半導體裝置之製造方法、基板處理裝置、以及記錄媒體及清洗結束判定方法 |
JP7053991B2 (ja) * | 2017-03-28 | 2022-04-13 | セントラル硝子株式会社 | ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法 |
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JPH10280151A (ja) * | 1997-04-08 | 1998-10-20 | Fujitsu Ltd | Cvd装置のクリーニング方法 |
JPH11345778A (ja) * | 1998-05-29 | 1999-12-14 | Tokyo Electron Ltd | 成膜装置のクリーニング方法及びそのクリーニング機構 |
JP4060526B2 (ja) * | 2000-12-13 | 2008-03-12 | 株式会社日立国際電気 | 半導体装置の製造方法 |
JP2002203833A (ja) * | 2000-12-27 | 2002-07-19 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
JP3990881B2 (ja) * | 2001-07-23 | 2007-10-17 | 株式会社日立製作所 | 半導体製造装置及びそのクリーニング方法 |
KR20040035280A (ko) * | 2002-10-19 | 2004-04-29 | 주성엔지니어링(주) | 증착 챔버의 인시튜 세정방법 |
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