JP5072217B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5072217B2
JP5072217B2 JP2005336491A JP2005336491A JP5072217B2 JP 5072217 B2 JP5072217 B2 JP 5072217B2 JP 2005336491 A JP2005336491 A JP 2005336491A JP 2005336491 A JP2005336491 A JP 2005336491A JP 5072217 B2 JP5072217 B2 JP 5072217B2
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Prior art keywords
film
substrate
semiconductor film
forming
opening
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Expired - Fee Related
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JP2005336491A
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Japanese (ja)
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JP2006173596A5 (enExample
JP2006173596A (ja
Inventor
良明 山本
幸一郎 田中
敦生 磯部
大輔 大柄根
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005336491A priority Critical patent/JP5072217B2/ja
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Publication of JP2006173596A5 publication Critical patent/JP2006173596A5/ja
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Publication of JP5072217B2 publication Critical patent/JP5072217B2/ja
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JP2005336491A 2004-11-22 2005-11-22 半導体装置の作製方法 Expired - Fee Related JP5072217B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005336491A JP5072217B2 (ja) 2004-11-22 2005-11-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004338229 2004-11-22
JP2004338229 2004-11-22
JP2005336491A JP5072217B2 (ja) 2004-11-22 2005-11-22 半導体装置の作製方法

Publications (3)

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JP2006173596A JP2006173596A (ja) 2006-06-29
JP2006173596A5 JP2006173596A5 (enExample) 2008-09-18
JP5072217B2 true JP5072217B2 (ja) 2012-11-14

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JP2005336491A Expired - Fee Related JP5072217B2 (ja) 2004-11-22 2005-11-22 半導体装置の作製方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008022827A (ja) * 2006-07-25 2008-02-07 Sangyo Shinko Kk 植栽基材および植物生育方法
FR2906078B1 (fr) * 2006-09-19 2009-02-13 Commissariat Energie Atomique Procede de fabrication d'une structure micro-technologique mixte et une structure ainsi obtenue
EP1970951A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2372756A1 (en) 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
US8563397B2 (en) * 2008-07-09 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8507322B2 (en) * 2010-06-24 2013-08-13 Akihiro Chida Semiconductor substrate and method for manufacturing semiconductor device
JP5739257B2 (ja) * 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2002353235A (ja) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd アクティブマトリクス基板とそれを用いた表示装置およびその製造方法
JP4244120B2 (ja) * 2001-06-20 2009-03-25 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP3967259B2 (ja) * 2001-12-11 2007-08-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3972825B2 (ja) * 2003-01-28 2007-09-05 セイコーエプソン株式会社 アクティブマトリクス型表示装置の製造方法
JP4749102B2 (ja) * 2004-09-24 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2006173596A (ja) 2006-06-29

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