JP5065660B2 - 半導体処理 - Google Patents
半導体処理 Download PDFInfo
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- JP5065660B2 JP5065660B2 JP2006325343A JP2006325343A JP5065660B2 JP 5065660 B2 JP5065660 B2 JP 5065660B2 JP 2006325343 A JP2006325343 A JP 2006325343A JP 2006325343 A JP2006325343 A JP 2006325343A JP 5065660 B2 JP5065660 B2 JP 5065660B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Description
通常の研削装置を用いてCVD炭化ケイ素サセプタリングを機械加工し、表面粗さRa=0.8ミクロンを得る。表面粗さは、接触型プロフィルメータを用いて測定される。機械加工は、最初に、150粒度(grit)を有するダイヤモンド砥石で、続いて320粒度を有するダイヤモンド砥石で行われる。研削は1750rpmの速度で9時間行われる。
実施例1に記載したように、通常の研削装置と方法を用いて、CVD炭化ケイ素サセプタリングを機械加工し、表面粗さRa=0.8ミクロンを得る。表面粗さは、接触型プロフィルメータを用いて測定される。
実施例1に記載したように、通常の研削装置を用いて、CVD炭化ケイ素サセプタリングを機械加工し、表面粗さRa=0.8ミクロンを得る。表面粗さは、接触型プロフィルメータを用いて測定される。
実施例1と同じ手順に従って、CVD炭化ケイ素サセプタリングを機械加工し、Ra=0.8を達成する。サセプタは、その後、20%の酸素を含む標準的な熱による開放型空気加熱炉内に置かれる。加熱炉の温度は1000℃まで上げられ、圧力は1気圧に維持される。サセプタは加熱炉の中で12時間加熱され、サセプタの表面上に0.1ミクロンの厚さの二酸化ケイ素の層を生成する。
実施例1で記載したとおり、CVD炭化ケイ素サセプタリングを機械加工して、Ra=0.8を得る。サセプタリングは、その後、標準的な熱による開放型空気加熱炉内に置かれ、リングの表面上に0.8ミクロンの厚さの二酸化ケイ素の層を生成する。
実施例1に記載するとおり、化学蒸着した炭化ケイ素サセプタリングを機械加工して、Ra=0.8を得る。サセプタリングは、その後、標準的な熱による開放型空気加熱炉内に置かれ、リングの表面上に1ミクロンの厚さの二酸化ケイ素の層を生成する。
0.25ミクロン〜1ミクロンのダイヤモンド粒子を使用して、化学蒸着した炭化ケイ素ガス拡散プレートを機械的に研磨し、20ÅのRMSを得る。表面はタリステップ機械接触型プロフィルメータで測定される。研磨したガス拡散プレートは、次に、融解水酸化カリウムを用いて、900℃で10分間、その表面上をエッチングされる。エッチングは不活性のアルゴンガス雰囲気中で行われる。
化学蒸着した炭化ケイ素ガス拡散プレートが、50重量%の硝酸と20重量%のフッ化水素酸を用いて20℃で60分間エッチングされる。ガス拡散プレートは、蒸留水で洗浄され、余分な硝酸が除去される。ガス拡散プレートは、その後、実施例7におけるのと同様に、高圧の反応器内に置かれ、超臨界二酸化炭素で処理される。SEM分析によると、ガス拡散プレートの表面上には、あったとしてもわずかな粒子が見られるにすぎないと予測される。
炭化ケイ素ガス拡散プレートは、アルミナ研磨粒子を用いてウエットサンドブラスト加工される。アルミナ研磨粒子は、10ミクロン〜20ミクロンのサイズである。ガス拡散プレートの表面は、30分間、10ml/分のスラリー流量で吹き付けられる。
実施例1に記載したように、化学蒸着した炭化ケイ素ガス拡散プレートを機械加工して、Ra=0.8を得る。ガス拡散プレートは、その後、標準的な熱による開放型空気加熱炉内に置かれ、蒸気が加えられ、プレートの表面上に厚さが1ミクロンの二酸化ケイ素の層が形成される。
Claims (5)
- (a)炭化ケイ素物品を提供すること;及び、
(b)該炭化ケイ素物品の1以上の表面を酸化して該1以上の表面上に被膜を形成し、続いて該物品の1以上の表面が0.5ミクロン以下のRa及び5ミクロン以下のRz(din)を有し、かつ該物品が、ウェハ処理中に半導体ウェハ上に160個/dm2以下の粒子を生じさせるように、前記1以上の表面から前記被膜を剥離することによって、前記炭化ケイ素物品の1以上の表面を改変すること、
を含む方法であって、
前記炭化ケイ素物品の1以上の表面が、開放型空気加熱炉内で800℃〜2000℃で50時間〜400時間酸化されるか又は、前記炭化ケイ素物品の1以上の表面が、密閉型加熱炉内で800℃〜2000℃で50トール〜1気圧において5時間〜30時間酸化される、方法。 - 前記炭化ケイ素が、CVD炭化ケイ素、PVD炭化ケイ素、反応結合した炭化ケイ素、焼結炭化ケイ素、ホットプレス炭化ケイ素または発泡炭化ケイ素から選択される、請求項1記載の方法。
- 前記酸化物被膜が、1以上の無機酸で剥離される、請求項1記載の方法。
- 前記酸化物被膜が、0.1ミクロン〜10ミクロンの厚さである、請求項1記載の方法。
- 前記炭化ケイ素物品が、プラズマスクリーン、ガス拡散プレート、焦点リング、サセプタリング又はウェハ保持装置である、請求項1記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US74222105P | 2005-12-02 | 2005-12-02 | |
US60/742221 | 2005-12-02 |
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JP2007189203A JP2007189203A (ja) | 2007-07-26 |
JP5065660B2 true JP5065660B2 (ja) | 2012-11-07 |
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US (1) | US7589025B2 (ja) |
EP (1) | EP1793021A3 (ja) |
JP (1) | JP5065660B2 (ja) |
KR (1) | KR101332206B1 (ja) |
CN (2) | CN1983517A (ja) |
TW (1) | TWI321337B (ja) |
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JP4539140B2 (ja) * | 2004-03-29 | 2010-09-08 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法 |
US20080261401A1 (en) | 2004-04-08 | 2008-10-23 | Ii-Vi Incorporated | Chemical-Mechanical Polishing of Sic Surfaces Using Hydrogen Peroxide or Ozonated Water Solutions in Combination with Colloidal Abrasive |
US20060255012A1 (en) * | 2005-05-10 | 2006-11-16 | Gunilla Jacobson | Removal of particles from substrate surfaces using supercritical processing |
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- 2006-12-01 TW TW095144609A patent/TWI321337B/zh active
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US7589025B2 (en) | 2009-09-15 |
US20070128837A1 (en) | 2007-06-07 |
TW200733230A (en) | 2007-09-01 |
JP2007189203A (ja) | 2007-07-26 |
EP1793021A3 (en) | 2009-01-14 |
CN1983517A (zh) | 2007-06-20 |
KR20070058338A (ko) | 2007-06-08 |
EP1793021A2 (en) | 2007-06-06 |
TWI321337B (en) | 2010-03-01 |
CN103643299A (zh) | 2014-03-19 |
KR101332206B1 (ko) | 2013-11-25 |
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