JP5046648B2 - 構造部のミル処理断面の局部的変化を制御する方法 - Google Patents
構造部のミル処理断面の局部的変化を制御する方法 Download PDFInfo
- Publication number
- JP5046648B2 JP5046648B2 JP2006541346A JP2006541346A JP5046648B2 JP 5046648 B2 JP5046648 B2 JP 5046648B2 JP 2006541346 A JP2006541346 A JP 2006541346A JP 2006541346 A JP2006541346 A JP 2006541346A JP 5046648 B2 JP5046648 B2 JP 5046648B2
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- milling
- cross
- incident angle
- milling speed
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3114—Machining
Description
Claims (3)
- 第2の材料で構成される構造部に、該構造部の断面の局部的な変化を制御するため、ミル処理の前に保護層として設置される第1の材料を選択する方法であって、
所望の断面形状を定めるステップと、
より大きな入射角での、前記第2の材料の近似的なミル処理速度を定めるステップであって、前記入射角は、イオンビームが入射される前記構造部の表面の垂線に対するイオンビームの角度を有するステップと、
前記より大きな入射角において、所望の断面形状を形成し得るミル処理速度を有する既知の材料から、第1の材料を選択するステップと、
を有し、
前記所望の断面形状は、均一な平坦断面を有し、
前記既知の材料から、第1の材料を選択するステップは、
より大きな入射角において、該より大きな入射角における前記第2の材料のミル処理速度とほぼ同等のミル処理速度を有する既知の材料から、材料の予備群を選定するステップと、
前記第2の材料の電子放出係数を定めるステップと、
前記選定された材料の予備群の各材料の電子放出係数を求めるステップと、
前記予備群から、前記第2の材料との電子放出係数の相対差が最大となる適切な第1の材料を選択するステップと、
を有することを特徴とする方法。 - 前記既知の材料から第1の材料を選択するステップは、45゜よりも大きな入射角において、該45゜よりも大きな入射角における前記第2の材料のミル処理速度とほぼ等しいミル処理速度を有する第1の材料を選択するステップを有することを特徴とする請求項1に記載の方法。
- 前記既知の材料から第1の材料を選択するステップは、75゜よりも大きな入射角において、該75゜よりも大きな入射角における前記第2の材料のミル処理速度とほぼ等しいミル処理速度を有する第1の材料を選択するステップを有することを特徴とする請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/716,181 US7611610B2 (en) | 2003-11-18 | 2003-11-18 | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
US10/716,181 | 2003-11-18 | ||
PCT/US2004/038561 WO2005050691A2 (en) | 2003-11-18 | 2004-11-17 | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012107011A Division JP5675692B2 (ja) | 2003-11-18 | 2012-05-08 | 構造部のミル処理断面の局部的変化を制御する方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007511918A JP2007511918A (ja) | 2007-05-10 |
JP5046648B2 true JP5046648B2 (ja) | 2012-10-10 |
Family
ID=34574365
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2006541346A Active JP5046648B2 (ja) | 2003-11-18 | 2004-11-17 | 構造部のミル処理断面の局部的変化を制御する方法 |
JP2012107011A Active JP5675692B2 (ja) | 2003-11-18 | 2012-05-08 | 構造部のミル処理断面の局部的変化を制御する方法および装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012107011A Active JP5675692B2 (ja) | 2003-11-18 | 2012-05-08 | 構造部のミル処理断面の局部的変化を制御する方法および装置 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7611610B2 (ja) |
EP (1) | EP1685558A4 (ja) |
JP (2) | JP5046648B2 (ja) |
MY (1) | MY142922A (ja) |
TW (2) | TWI446430B (ja) |
WO (1) | WO2005050691A2 (ja) |
Cited By (1)
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WO2018182640A1 (en) * | 2017-03-30 | 2018-10-04 | Intel Corporation | Method of sample preparation using dual ion beam trenching |
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US7611610B2 (en) * | 2003-11-18 | 2009-11-03 | Fei Company | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
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US8222599B1 (en) | 2009-04-15 | 2012-07-17 | Western Digital (Fremont), Llc | Precise metrology with adaptive milling |
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-
2003
- 2003-11-18 US US10/716,181 patent/US7611610B2/en active Active
-
2004
- 2004-11-17 EP EP04811316A patent/EP1685558A4/en not_active Withdrawn
- 2004-11-17 WO PCT/US2004/038561 patent/WO2005050691A2/en not_active Application Discontinuation
- 2004-11-17 JP JP2006541346A patent/JP5046648B2/ja active Active
- 2004-11-18 MY MYPI20044786A patent/MY142922A/en unknown
- 2004-11-18 TW TW100116050A patent/TWI446430B/zh active
- 2004-11-18 TW TW093135501A patent/TWI353012B/zh active
-
2009
- 2009-10-28 US US12/607,867 patent/US8163145B2/en not_active Expired - Lifetime
-
2012
- 2012-04-18 US US13/449,835 patent/US9852750B2/en not_active Expired - Lifetime
- 2012-05-08 JP JP2012107011A patent/JP5675692B2/ja active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018182640A1 (en) * | 2017-03-30 | 2018-10-04 | Intel Corporation | Method of sample preparation using dual ion beam trenching |
US11476120B2 (en) | 2017-03-30 | 2022-10-18 | Intel Corporation | Method of sample preparation using dual ion beam trenching |
Also Published As
Publication number | Publication date |
---|---|
US9852750B2 (en) | 2017-12-26 |
EP1685558A4 (en) | 2009-01-21 |
TW201135828A (en) | 2011-10-16 |
US7611610B2 (en) | 2009-11-03 |
WO2005050691A3 (en) | 2006-06-01 |
JP2012195597A (ja) | 2012-10-11 |
US20120199923A1 (en) | 2012-08-09 |
TW200527524A (en) | 2005-08-16 |
US20100108506A1 (en) | 2010-05-06 |
US8163145B2 (en) | 2012-04-24 |
JP2007511918A (ja) | 2007-05-10 |
MY142922A (en) | 2011-01-31 |
TWI446430B (zh) | 2014-07-21 |
TWI353012B (en) | 2011-11-21 |
EP1685558A2 (en) | 2006-08-02 |
JP5675692B2 (ja) | 2015-02-25 |
WO2005050691A2 (en) | 2005-06-02 |
US20050103746A1 (en) | 2005-05-19 |
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