JP5043943B2 - 基板の片面をエッチングする方法 - Google Patents
基板の片面をエッチングする方法 Download PDFInfo
- Publication number
- JP5043943B2 JP5043943B2 JP2009524603A JP2009524603A JP5043943B2 JP 5043943 B2 JP5043943 B2 JP 5043943B2 JP 2009524603 A JP2009524603 A JP 2009524603A JP 2009524603 A JP2009524603 A JP 2009524603A JP 5043943 B2 JP5043943 B2 JP 5043943B2
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- JP
- Japan
- Prior art keywords
- wafer
- belt
- etchant
- vacuum chamber
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
Description
Claims (15)
- ウェーハの片面エッチング方法であって、
ウェーハの背面を穿孔ベルトに対して配置し、
前記ウェーハの前面をエッチング剤に露出し、
前記エッチング剤に露出するベルトの面側と、前記ウェーハの背面と対向するベルトの面と反対側のベルトの面側との間で圧力差を生成し、前記圧力差は前記ベルトの第1の孔部を通って前記ウェーハの前面には蒸着されないエッチング剤を抽出し、前記ウェーハの背面を前記エッチング剤から保護し、
前記エッチング剤は、蒸気エッチング剤を含み、
エッチング中は、前記ウェーハが真空室によって生成された吸引力によってのみ前記穿孔ベルトに対して保持され、
前記エッチングの前後は、前記ウェーハが複数のローラによってのみ支持される
方法。 - ウェーハ洗浄サブシステムにおける前記ベルトと前記複数のローラとの間の距離は、前記ウェーハの厚みより有意に大きく、前記ベルトと前記ウェーハとの間に空間が与えられる、請求項1に記載の方法。
- リンスされた前記ウェーハにエアーナイフを吹き付けることによって前記ウェーハを乾燥させることを更に備える請求項1または2に記載の方法。
- 前記圧力差を生成することは、前記ベルトに対して前記ウェーハと反対側に、前記ウェーハとは直接接触しない真空室を与えることを含む請求項1から3のいずれか一項に記載の方法。
- 前記蒸気エッチング剤の凝縮が前記ウェーハの前記背面に接触するのを防止すること、を更に備える請求項1から4のいずれか一項に記載の方法。
- 前記蒸気エッチング剤の凝縮が前記ウェーハの前記背面に接触するのを防止することは、前記真空室上で前記蒸気エッチングが凝縮するのを防止することを含む
請求項5に記載の方法。 - 前記真空室上で前記蒸気エッチング剤が凝縮することを防止することは、前記真空室を加熱することを含む
請求項6に記載の方法。 - 前記真空室における圧力を制御することを更に含む請求項4から7のいずれか一項に記載の方法。
- 前記真空室における圧力を制御することは、排気流出を制御すること、複数の室を有する真空プレナムを使用すること、前記真空室へガスを注入すること、前記エッチング剤の部分的圧力を制御すること、及び前記真空室を加熱することからなるグループから選択される少なくとも1つである
請求項8に記載の方法。 - 前記穿孔ベルトに対して前記ウェーハの背面を配置することは、前記ベルトの下方に前記ウェーハの前記背面を配置することを含む請求項1から9のいずれか一項に記載の方法。
- 前記穿孔ベルトに対して前記ウェーハの背面を配置することは、前記ウェーハの背面で前記ベルトの第2の孔部を覆い、前記第2の孔部を介し、前記圧力差によって前記ベルトに対して前記ウェーハを持ち上げることを含む請求項1から10のいずれか一項に記載の方法。
- 前記穿孔ベルトに対して前記ウェーハの背面を配置することは、前記ウェーハの前記背面を前記ベルトに配置することを含む請求項1から11のいずれか一項に記載の方法。
- 前記ウェーハは、50〜250ミクロンの厚みを有する
請求項1から12のいずれか一項に記載の方法。 - 前記ウェーハの前記前面を、前記ウェーハを運搬するためのローラと接触させることを更に備える請求項1から13のいずれか一項に記載の方法。
- 前記ベルトと前記ローラとの間の距離を可変とすることを含む
請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/505,658 | 2006-08-16 | ||
US11/505,658 US20080041526A1 (en) | 2006-08-16 | 2006-08-16 | Single-sided etching |
PCT/US2007/016817 WO2008020974A2 (en) | 2006-08-16 | 2007-07-25 | Method and apparatus for single-sided etching |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010500777A JP2010500777A (ja) | 2010-01-07 |
JP5043943B2 true JP5043943B2 (ja) | 2012-10-10 |
Family
ID=39082519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009524603A Active JP5043943B2 (ja) | 2006-08-16 | 2007-07-25 | 基板の片面をエッチングする方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20080041526A1 (ja) |
EP (1) | EP2079856B1 (ja) |
JP (1) | JP5043943B2 (ja) |
KR (1) | KR101419076B1 (ja) |
AT (1) | ATE499700T1 (ja) |
DE (1) | DE602007012745D1 (ja) |
WO (1) | WO2008020974A2 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
DE102007063202A1 (de) * | 2007-12-19 | 2009-06-25 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern |
WO2009123450A1 (en) * | 2008-04-01 | 2009-10-08 | Stichting Energieonderzoek Centrum Nederland | Arrangement and method for etching silicon wafer |
US20100055398A1 (en) * | 2008-08-29 | 2010-03-04 | Evergreen Solar, Inc. | Single-Sided Textured Sheet Wafer |
KR101202746B1 (ko) * | 2011-04-22 | 2012-11-19 | 삼성코닝정밀소재 주식회사 | 광전지 모듈용 기판 제조방법 |
TW201332871A (zh) * | 2011-12-07 | 2013-08-16 | Intevac Inc | 高載量太陽能晶圓裝載裝置 |
US20150128856A1 (en) * | 2013-11-14 | 2015-05-14 | Illinois Tool Works Inc. | Dispensing apparatus having transport system and method for transporting a substrate within the dispensing apparatus |
US9357686B2 (en) | 2013-11-14 | 2016-05-31 | Illinois Tool Works Inc. | Dispensing apparatus having substrate inverter system and clamping system, and method for dispensing a viscous material on a substrate |
US9662675B2 (en) | 2014-07-31 | 2017-05-30 | Illinois Tool Works Inc. | External inverter system for variable substrate thickness and method for rotating a substrate |
US10076896B2 (en) * | 2015-06-25 | 2018-09-18 | Alta Devices, Inc. | Pressurized heated rolling press for manufacture and method of use |
RU173643U1 (ru) * | 2017-03-06 | 2017-09-04 | Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" | Кассета для односторонней обработки полупроводниковых пластин |
US11075084B2 (en) * | 2017-08-31 | 2021-07-27 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chemistries for etching multi-stacked layers |
DE202018005633U1 (de) | 2018-12-08 | 2019-03-26 | H2GEMINI Technology Consulting GmbH | Vorrichtung zur selektiven Ätzung von Substraten |
KR102000028B1 (ko) | 2018-12-24 | 2019-07-15 | 박정기 | 센서 모듈을 이용한 스트로크 자세 정보 수집 및 코칭 방법 |
Family Cites Families (20)
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US3477558A (en) * | 1966-10-27 | 1969-11-11 | Fred J Fleischauer | Air lift and vacuum conveyors and foraminous belt means therefor |
BE795260A (fr) * | 1972-02-10 | 1973-08-09 | Saint Gobain | Procede et dispositif pour la production de coussins gazeux pour le support de feuilles ou rubans par leur face superieure |
US4227983A (en) * | 1979-02-01 | 1980-10-14 | Western Electric Company, Inc. | Method for making carrier tape |
JPH0236276Y2 (ja) * | 1985-01-10 | 1990-10-03 | ||
US4660752A (en) * | 1985-08-29 | 1987-04-28 | Compak/Webcor Manufacturing Packaging Co. | Vacuum feeder for continuous web |
JPS6262514A (ja) * | 1985-09-12 | 1987-03-19 | Fujitsu Ltd | 光化学気相成長装置 |
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JPH03193153A (ja) * | 1989-12-21 | 1991-08-22 | Kasei Naoetsu:Kk | 板状体の片面スプレー処理装置 |
DE4107464A1 (de) * | 1991-03-08 | 1992-09-10 | Schmid Gmbh & Co Geb | Verfahren und vorrichtung zum einseitigen behandeln von plattenfoermigen gegenstaenden |
JPH04318930A (ja) * | 1991-04-17 | 1992-11-10 | Tokyo Electron Ltd | 自然酸化膜の除去方法及びその装置 |
JPH0641769A (ja) * | 1992-07-27 | 1994-02-15 | Dainippon Screen Mfg Co Ltd | エッチング装置 |
JPH06183552A (ja) * | 1992-12-17 | 1994-07-05 | Toyo Eng Corp | 搬送物挙動制御ベルトコンベア |
JPH06302935A (ja) * | 1993-04-13 | 1994-10-28 | Yoshisato Tsubaki | 基板のエッチング方法、および、基板のエッチング装置 |
JP3277420B2 (ja) * | 1993-09-22 | 2002-04-22 | ソニー株式会社 | 鉄系金属薄板のエッチング方法及び色選別機構の製造方法 |
JPH0846044A (ja) * | 1994-07-29 | 1996-02-16 | Nippon Steel Corp | 半導体装置の製造方法 |
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JP3623651B2 (ja) * | 1998-03-30 | 2005-02-23 | トヤマキカイ株式会社 | 搬送装置 |
JP2002254378A (ja) * | 2001-02-22 | 2002-09-10 | Hiroshi Akashi | 液中ワーク取り出し装置 |
JP2003073861A (ja) * | 2001-08-31 | 2003-03-12 | Fuji Kiko:Kk | エッチング装置およびエッチングシステム |
-
2006
- 2006-08-16 US US11/505,658 patent/US20080041526A1/en not_active Abandoned
-
2007
- 2007-07-25 JP JP2009524603A patent/JP5043943B2/ja active Active
- 2007-07-25 DE DE602007012745T patent/DE602007012745D1/de active Active
- 2007-07-25 KR KR1020097005411A patent/KR101419076B1/ko active IP Right Grant
- 2007-07-25 EP EP07810814A patent/EP2079856B1/en active Active
- 2007-07-25 AT AT07810814T patent/ATE499700T1/de not_active IP Right Cessation
- 2007-07-25 WO PCT/US2007/016817 patent/WO2008020974A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2008020974A2 (en) | 2008-02-21 |
KR101419076B1 (ko) | 2014-07-11 |
WO2008020974A3 (en) | 2008-10-16 |
EP2079856A2 (en) | 2009-07-22 |
JP2010500777A (ja) | 2010-01-07 |
ATE499700T1 (de) | 2011-03-15 |
EP2079856B1 (en) | 2011-02-23 |
DE602007012745D1 (de) | 2011-04-07 |
US20080041526A1 (en) | 2008-02-21 |
EP2079856A4 (en) | 2009-10-14 |
KR20090042970A (ko) | 2009-05-04 |
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