JP5041686B2 - 薄膜集積回路の剥離方法および半導体装置の作製方法 - Google Patents

薄膜集積回路の剥離方法および半導体装置の作製方法 Download PDF

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Publication number
JP5041686B2
JP5041686B2 JP2005220262A JP2005220262A JP5041686B2 JP 5041686 B2 JP5041686 B2 JP 5041686B2 JP 2005220262 A JP2005220262 A JP 2005220262A JP 2005220262 A JP2005220262 A JP 2005220262A JP 5041686 B2 JP5041686 B2 JP 5041686B2
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Prior art keywords
substrate
film
thin film
integrated circuit
peeling
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Expired - Fee Related
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JP2005220262A
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Japanese (ja)
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JP2006066906A5 (enrdf_load_stackoverflow
JP2006066906A (ja
Inventor
友子 田村
栄二 杉山
芳隆 道前
浩二 大力
卓也 鶴目
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005220262A priority Critical patent/JP5041686B2/ja
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Publication of JP2006066906A5 publication Critical patent/JP2006066906A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005220262A 2004-07-30 2005-07-29 薄膜集積回路の剥離方法および半導体装置の作製方法 Expired - Fee Related JP5041686B2 (ja)

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JP2005220262A JP5041686B2 (ja) 2004-07-30 2005-07-29 薄膜集積回路の剥離方法および半導体装置の作製方法

Applications Claiming Priority (5)

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JP2004224803 2004-07-30
JP2004224762 2004-07-30
JP2004224762 2004-07-30
JP2004224803 2004-07-30
JP2005220262A JP5041686B2 (ja) 2004-07-30 2005-07-29 薄膜集積回路の剥離方法および半導体装置の作製方法

Publications (3)

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JP2006066906A JP2006066906A (ja) 2006-03-09
JP2006066906A5 JP2006066906A5 (enrdf_load_stackoverflow) 2008-08-07
JP5041686B2 true JP5041686B2 (ja) 2012-10-03

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496165B1 (en) 2015-07-09 2016-11-15 International Business Machines Corporation Method of forming a flexible semiconductor layer and devices on a flexible carrier

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007108371A1 (en) * 2006-03-15 2007-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5469799B2 (ja) 2006-03-15 2014-04-16 株式会社半導体エネルギー研究所 無線通信によりデータの交信を行う半導体装置
TWI570900B (zh) * 2006-09-29 2017-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US7968382B2 (en) 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2008120286A1 (ja) 2007-02-27 2008-10-09 Fujitsu Microelectronics Limited 半導体記憶装置、半導体記憶装置の製造方法、およびパッケージ樹脂形成方法
US7973316B2 (en) * 2007-03-26 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR101026040B1 (ko) * 2008-11-13 2011-03-30 삼성전기주식회사 박막소자 제조방법
JP5543498B2 (ja) * 2009-03-04 2014-07-09 エスアールアイ インターナショナル 有機電気装置のための封入方法および誘電体層
JP2011181591A (ja) * 2010-02-26 2011-09-15 Sumitomo Chemical Co Ltd 薄膜半導体装置、薄膜半導体製造装置及び薄膜半導体製造方法
WO2012166686A2 (en) * 2011-05-27 2012-12-06 Mc10, Inc. Electronic, optical and/or mechanical apparatus and systems and methods for fabricating same
KR101174834B1 (ko) 2012-04-05 2012-08-17 주식회사 다보씨앤엠 공정필름을 이용한 필름형 디스플레이 기판의 제조방법 및 이에 사용되는 필름형 디스플레이 기판 제조용 공정필름
CN110379715A (zh) * 2014-08-26 2019-10-25 株式会社尼康 转印基板
CN108109950A (zh) * 2016-11-25 2018-06-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2002353235A (ja) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd アクティブマトリクス基板とそれを用いた表示装置およびその製造方法
JP4524561B2 (ja) * 2001-07-24 2010-08-18 セイコーエプソン株式会社 転写方法
TWI330269B (en) * 2002-12-27 2010-09-11 Semiconductor Energy Lab Separating method
JP4373085B2 (ja) * 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496165B1 (en) 2015-07-09 2016-11-15 International Business Machines Corporation Method of forming a flexible semiconductor layer and devices on a flexible carrier
US9576837B2 (en) 2015-07-09 2017-02-21 International Business Machines Corporation Method of forming a flexible semiconductor layer and devices on a flexible carrier
US9659807B2 (en) 2015-07-09 2017-05-23 International Business Machines Corporation Method of forming a flexible semiconductor layer and devices on a flexible carrier
US9691653B2 (en) 2015-07-09 2017-06-27 International Business Machines Corporation Method of forming a flexible semiconductor layer and devices on a flexible carrier
US9704736B2 (en) 2015-07-09 2017-07-11 International Business Machines Corporation Method of forming a flexible semiconductor layer and devices on a flexible carrier
US10083850B2 (en) 2015-07-09 2018-09-25 International Business Machines Corporation Method of forming a flexible semiconductor layer and devices on a flexible carrier

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