JP2006066906A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006066906A5 JP2006066906A5 JP2005220262A JP2005220262A JP2006066906A5 JP 2006066906 A5 JP2006066906 A5 JP 2006066906A5 JP 2005220262 A JP2005220262 A JP 2005220262A JP 2005220262 A JP2005220262 A JP 2005220262A JP 2006066906 A5 JP2006066906 A5 JP 2006066906A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- peeling
- thin film
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 40
- 238000000034 method Methods 0.000 claims 21
- 239000010409 thin film Substances 0.000 claims 18
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 11
- 229910052751 metal Inorganic materials 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 10
- 239000010955 niobium Substances 0.000 claims 8
- 229920005989 resin Polymers 0.000 claims 8
- 239000011347 resin Substances 0.000 claims 8
- 239000010936 titanium Substances 0.000 claims 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 6
- 229910052750 molybdenum Inorganic materials 0.000 claims 6
- 239000011733 molybdenum Substances 0.000 claims 6
- 229910052758 niobium Inorganic materials 0.000 claims 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 6
- 229910052719 titanium Inorganic materials 0.000 claims 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- 229910052736 halogen Inorganic materials 0.000 claims 4
- -1 halogen fluoride Chemical class 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000003822 epoxy resin Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 2
- 229920000647 polyepoxide Polymers 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005220262A JP5041686B2 (ja) | 2004-07-30 | 2005-07-29 | 薄膜集積回路の剥離方法および半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004224803 | 2004-07-30 | ||
| JP2004224762 | 2004-07-30 | ||
| JP2004224762 | 2004-07-30 | ||
| JP2004224803 | 2004-07-30 | ||
| JP2005220262A JP5041686B2 (ja) | 2004-07-30 | 2005-07-29 | 薄膜集積回路の剥離方法および半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006066906A JP2006066906A (ja) | 2006-03-09 |
| JP2006066906A5 true JP2006066906A5 (enrdf_load_stackoverflow) | 2008-08-07 |
| JP5041686B2 JP5041686B2 (ja) | 2012-10-03 |
Family
ID=36113046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005220262A Expired - Fee Related JP5041686B2 (ja) | 2004-07-30 | 2005-07-29 | 薄膜集積回路の剥離方法および半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5041686B2 (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007108371A1 (en) * | 2006-03-15 | 2007-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5469799B2 (ja) | 2006-03-15 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 無線通信によりデータの交信を行う半導体装置 |
| TWI570900B (zh) * | 2006-09-29 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US8137417B2 (en) | 2006-09-29 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Peeling apparatus and manufacturing apparatus of semiconductor device |
| US7968382B2 (en) | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| WO2008120286A1 (ja) | 2007-02-27 | 2008-10-09 | Fujitsu Microelectronics Limited | 半導体記憶装置、半導体記憶装置の製造方法、およびパッケージ樹脂形成方法 |
| US7973316B2 (en) * | 2007-03-26 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR101026040B1 (ko) * | 2008-11-13 | 2011-03-30 | 삼성전기주식회사 | 박막소자 제조방법 |
| JP5543498B2 (ja) * | 2009-03-04 | 2014-07-09 | エスアールアイ インターナショナル | 有機電気装置のための封入方法および誘電体層 |
| JP2011181591A (ja) * | 2010-02-26 | 2011-09-15 | Sumitomo Chemical Co Ltd | 薄膜半導体装置、薄膜半導体製造装置及び薄膜半導体製造方法 |
| WO2012166686A2 (en) * | 2011-05-27 | 2012-12-06 | Mc10, Inc. | Electronic, optical and/or mechanical apparatus and systems and methods for fabricating same |
| KR101174834B1 (ko) | 2012-04-05 | 2012-08-17 | 주식회사 다보씨앤엠 | 공정필름을 이용한 필름형 디스플레이 기판의 제조방법 및 이에 사용되는 필름형 디스플레이 기판 제조용 공정필름 |
| CN110379715A (zh) * | 2014-08-26 | 2019-10-25 | 株式会社尼康 | 转印基板 |
| US9496165B1 (en) | 2015-07-09 | 2016-11-15 | International Business Machines Corporation | Method of forming a flexible semiconductor layer and devices on a flexible carrier |
| CN108109950A (zh) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4748859B2 (ja) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP2002353235A (ja) * | 2001-05-23 | 2002-12-06 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板とそれを用いた表示装置およびその製造方法 |
| JP4524561B2 (ja) * | 2001-07-24 | 2010-08-18 | セイコーエプソン株式会社 | 転写方法 |
| TWI330269B (en) * | 2002-12-27 | 2010-09-11 | Semiconductor Energy Lab | Separating method |
| JP4373085B2 (ja) * | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
-
2005
- 2005-07-29 JP JP2005220262A patent/JP5041686B2/ja not_active Expired - Fee Related