JP2005203751A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005203751A5 JP2005203751A5 JP2004352242A JP2004352242A JP2005203751A5 JP 2005203751 A5 JP2005203751 A5 JP 2005203751A5 JP 2004352242 A JP2004352242 A JP 2004352242A JP 2004352242 A JP2004352242 A JP 2004352242A JP 2005203751 A5 JP2005203751 A5 JP 2005203751A5
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- thin film
- film integrated
- circuit devices
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims 46
- 238000004519 manufacturing process Methods 0.000 claims 16
- 238000000034 method Methods 0.000 claims 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 9
- 229910052736 halogen Inorganic materials 0.000 claims 8
- -1 halogen fluoride Chemical class 0.000 claims 8
- 239000010408 film Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- 239000007789 gas Substances 0.000 claims 6
- 239000007788 liquid Substances 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000000853 adhesive Substances 0.000 claims 2
- 230000001070 adhesive effect Effects 0.000 claims 2
- 125000001424 substituent group Chemical group 0.000 claims 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004352242A JP4912586B2 (ja) | 2003-12-19 | 2004-12-06 | 薄膜集積回路装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003423888 | 2003-12-19 | ||
JP2003423888 | 2003-12-19 | ||
JP2004352242A JP4912586B2 (ja) | 2003-12-19 | 2004-12-06 | 薄膜集積回路装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005203751A JP2005203751A (ja) | 2005-07-28 |
JP2005203751A5 true JP2005203751A5 (enrdf_load_stackoverflow) | 2008-01-24 |
JP4912586B2 JP4912586B2 (ja) | 2012-04-11 |
Family
ID=34829380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004352242A Expired - Fee Related JP4912586B2 (ja) | 2003-12-19 | 2004-12-06 | 薄膜集積回路装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4912586B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007128433A (ja) * | 2005-11-07 | 2007-05-24 | Philtech Inc | Rfパウダーとその製造方法 |
ATE519223T1 (de) * | 2005-11-11 | 2011-08-15 | Koninkl Philips Electronics Nv | Verfahren zur herstellung mehrerer halbleiteranordnungen und trägersubstrat |
JP2008109116A (ja) * | 2006-09-26 | 2008-05-08 | Dainippon Printing Co Ltd | 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ |
JP2008113632A (ja) * | 2006-11-07 | 2008-05-22 | Hitachi Ltd | 生体植込用rfidタグおよびその挿入冶具体 |
US8188924B2 (en) | 2008-05-22 | 2012-05-29 | Philtech Inc. | RF powder and method for manufacturing the same |
US8154456B2 (en) | 2008-05-22 | 2012-04-10 | Philtech Inc. | RF powder-containing base |
US9490179B2 (en) | 2010-05-21 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device |
US11050144B1 (en) * | 2020-05-08 | 2021-06-29 | W. L. Gore & Associates, Inc. | Assembly with at least one antenna and a thermal insulation component |
JP2025125771A (ja) * | 2024-02-16 | 2025-08-28 | 浜松ホトニクス株式会社 | 接合体の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000020665A (ja) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | 半導体装置 |
JP4748859B2 (ja) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP4524561B2 (ja) * | 2001-07-24 | 2010-08-18 | セイコーエプソン株式会社 | 転写方法 |
-
2004
- 2004-12-06 JP JP2004352242A patent/JP4912586B2/ja not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5552345A (en) | Die separation method for silicon on diamond circuit structures | |
US7943440B2 (en) | Fabrication method of thin film device | |
CN104934374B (zh) | 电子管芯单体化方法 | |
US20100171189A1 (en) | Electronic device package and fabrication method thereof | |
JP2006093209A5 (enrdf_load_stackoverflow) | ||
US20150156869A1 (en) | Microelectronic structures having laminated or embedded glass routing structures for high density packaging | |
WO2005104192A3 (en) | A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES | |
JP2007173811A (ja) | Ic整合基板とキャリアの結合構造、及びその製造方法と電子デバイスの製造方法 | |
US9064950B2 (en) | Fabrication method for a chip package | |
JP2005203751A5 (enrdf_load_stackoverflow) | ||
US20090085196A1 (en) | Integrated circuit chip manufaturing method and semiconductor device | |
TW200910435A (en) | Method of wafer-level segmenting capable of protecting contact pad | |
JP2006013484A5 (enrdf_load_stackoverflow) | ||
CN1740087B (zh) | 半导体装置的单片化方法 | |
JP2006066906A5 (enrdf_load_stackoverflow) | ||
JP2005203762A5 (enrdf_load_stackoverflow) | ||
US20040248420A1 (en) | Substrate with microstructure formed thereon and manufacturing method thereof | |
JP2009095962A (ja) | 薄膜半導体装置の製造方法 | |
EP1890323B1 (en) | Method of manufacturing a substrate having a multilayer interconnection structure with separation of the substrate from a carrier | |
US7947573B2 (en) | Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure | |
KR100997992B1 (ko) | 박막소자의 제조방법 | |
SG142214A1 (en) | Process for the fabrication of thin-film device and thin-film device | |
JP2014104712A (ja) | 電子デバイスの製造方法および多層ガラス積層体 | |
KR101376903B1 (ko) | 솔더 포일을 이용한 웨이퍼 레벨 접합 방법 | |
KR102819751B1 (ko) | 용융 본딩 및 본딩 분리를 위한 저밀도 실리콘 산화물에 대한 방법 및 구조물 |