JP2006066906A5 - - Google Patents
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- JP2006066906A5 JP2006066906A5 JP2005220262A JP2005220262A JP2006066906A5 JP 2006066906 A5 JP2006066906 A5 JP 2006066906A5 JP 2005220262 A JP2005220262 A JP 2005220262A JP 2005220262 A JP2005220262 A JP 2005220262A JP 2006066906 A5 JP2006066906 A5 JP 2006066906A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- peeling
- thin film
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010408 film Substances 0.000 claims 40
- 239000010409 thin film Substances 0.000 claims 18
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 11
- 229910052751 metal Inorganic materials 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 10
- 239000010955 niobium Substances 0.000 claims 8
- 229920005989 resin Polymers 0.000 claims 8
- 239000011347 resin Substances 0.000 claims 8
- 239000010936 titanium Substances 0.000 claims 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 6
- 229910052750 molybdenum Inorganic materials 0.000 claims 6
- 239000011733 molybdenum Substances 0.000 claims 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 6
- 229910052758 niobium Inorganic materials 0.000 claims 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 6
- 229910052719 titanium Inorganic materials 0.000 claims 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 239000010937 tungsten Substances 0.000 claims 6
- 229910052736 halogen Inorganic materials 0.000 claims 4
- -1 halogen fluoride Chemical class 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- JOHWNGGYGAVMGU-UHFFFAOYSA-N Chlorine trifluoride Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 claims 2
- 229910020313 ClF Inorganic materials 0.000 claims 2
- 230000037283 Clf Effects 0.000 claims 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N Niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N TiO Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 239000003822 epoxy resin Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 2
- 229920000647 polyepoxide Polymers 0.000 claims 2
- 229910052904 quartz Inorganic materials 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 229910001929 titanium oxide Inorganic materials 0.000 claims 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 2
Claims (22)
前記剥離層上に複数の薄膜集積回路を形成し、
前記複数の薄膜集積回路上にそれぞれ樹脂膜を形成し、
エッチング剤を用いることにより、前記剥離層の全部又は一部を除去し、
前記基板と前記複数の薄膜集積回路とを剥離することを特徴とする薄膜集積回路の剥離方法。 Forming a release layer containing metal on the substrate;
Forming a plurality of thin film integrated circuits on the release layer;
Forming a resin film on each of the plurality of thin film integrated circuits ;
By using an etchant , all or part of the release layer is removed,
A method for peeling a thin film integrated circuit, comprising peeling off the substrate and the plurality of thin film integrated circuits.
前記樹脂膜を、前記複数の薄膜集積回路の側面を覆うように形成することを特徴とする薄膜集積回路の剥離方法。A method of peeling a thin film integrated circuit, wherein the resin film is formed so as to cover side surfaces of the plurality of thin film integrated circuits.
前記剥離層は、タングステン（Ｗ）、モリブデン（Ｍｏ）、ニオブ（Ｎｂ）またはチタン（Ｔｉ）を含んだ金属膜で形成することを特徴とする薄膜集積回路の剥離方法。 In any one of Claims 1 thru | or 4,
The method for peeling a thin film integrated circuit, wherein the peeling layer is formed of a metal film containing tungsten (W), molybdenum (Mo), niobium (Nb), or titanium (Ti).
前記剥離層は、金属膜と、前記金属膜上に形成された金属酸化物とを有することを特徴とする薄膜集積回路の剥離方法。 In any one of Claims 1 thru | or 4 ,
The peeling layer includes a metal film and a metal oxide formed on the metal film .
前記金属膜及び前記金属酸化物は、タングステン膜と前記タングステン膜上の酸化タングステン膜、モリブデン膜と前記モリブデン膜上の酸化モリブデン膜、ニオブ膜と前記ニオブ膜上の酸化ニオブ膜、又はチタン膜と前記チタン膜上の酸化チタン膜であることを特徴とする薄膜集積回路の剥離方法。 In claim 6 ,
The metal film and the metal oxide include a tungsten film and a tungsten oxide film over the tungsten film, a molybdenum film and a molybdenum oxide film over the molybdenum film, a niobium film and a niobium oxide film over the niobium film, or a titanium film. A method for peeling a thin film integrated circuit, which is a titanium oxide film on the titanium film .
前記エッチング剤として、フッ化ハロゲンを含む液体または気体を用いることを特徴とする薄膜集積回路の剥離方法。 In any one of Claims 1 thru | or 7,
A method for peeling a thin film integrated circuit, wherein a liquid or a gas containing halogen fluoride is used as the etchant.
前記フッ化ハロゲンを含む液体または気体として、三フッ化塩素（ＣｌＦ３）を用いることを特徴とする薄膜集積回路の剥離方法。 In claim 8,
A method for peeling a thin film integrated circuit, wherein chlorine trifluoride (ClF 3 ) is used as the liquid or gas containing halogen fluoride.
前記樹脂膜として、エポキシ樹脂を用いることを特徴とする薄膜集積回路の剥離方法。 In any one of Claims 1 thru | or 9,
A method for peeling a thin film integrated circuit, wherein an epoxy resin is used as the resin film.
前記基板として、ガラス基板または石英基板を用いることを特徴とする薄膜集積回路の剥離方法。 In any one of Claims 1 to 10,
A method for peeling a thin film integrated circuit, wherein a glass substrate or a quartz substrate is used as the substrate.
前記剥離層上に複数の薄膜集積回路を形成し、
前記複数の薄膜集積回路上にそれぞれ樹脂膜を形成し、
エッチング剤を用いることにより、前記剥離層の全部又は一部を除去し、
前記基板と前記複数の薄膜集積回路とを剥離し、前記基板を除去することを特徴とする半導体装置の作製方法。 Forming a release layer containing metal on the substrate;
Forming a plurality of thin film integrated circuits on the release layer;
Forming a resin film on each of the plurality of thin film integrated circuits ;
By using an etchant , all or part of the release layer is removed,
A method for manufacturing a semiconductor device, wherein the substrate and the plurality of thin film integrated circuits are separated and the substrate is removed .
前記樹脂膜を、前記複数の薄膜集積回路の側面を覆うように形成することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the resin film is formed so as to cover side surfaces of the plurality of thin film integrated circuits.
前記剥離層は、タングステン（Ｗ）、モリブデン（Ｍｏ）、ニオブ（Ｎｂ）またはチタン（Ｔｉ）を含んだ金属膜で形成することを特徴とする半導体装置の作製方法。 In any one of Claims 12 to 15,
The method for manufacturing a semiconductor device, wherein the peeling layer is formed using a metal film containing tungsten (W), molybdenum (Mo), niobium (Nb), or titanium (Ti).
前記剥離層は、金属膜と、前記金属膜上に形成された金属酸化物とを有することを特徴とする半導体装置の作製方法。 In any one of Claims 12 to 15 ,
The method for manufacturing a semiconductor device, wherein the peeling layer includes a metal film and a metal oxide formed over the metal film .
前記金属膜及び前記金属酸化物は、タングステン膜と前記タングステン膜上の酸化タングステン膜、モリブデン膜と前記モリブデン膜上の酸化モリブデン膜、ニオブ膜と前記ニオブ膜上の酸化ニオブ膜、又はチタン膜と前記チタン膜上の酸化チタン膜であることを特徴とする半導体装置の作製方法。 In claim 17 ,
The metal film and the metal oxide include a tungsten film and a tungsten oxide film over the tungsten film, a molybdenum film and a molybdenum oxide film over the molybdenum film, a niobium film and a niobium oxide film over the niobium film, or a titanium film. A method for manufacturing a semiconductor device, which is a titanium oxide film over the titanium film .
前記エッチング剤として、フッ化ハロゲンを含む液体または気体を用いることを特徴とする半導体装置の作製方法。 In any one of Claims 12 to 18 ,
A method for manufacturing a semiconductor device, wherein a liquid or a gas containing halogen fluoride is used as the etchant.
前記フッ化ハロゲンを含む液体または気体として、三フッ化塩素（ＣｌＦ３）を用いることを特徴とする半導体装置の作製方法。 In claim 19,
A method for manufacturing a semiconductor device, wherein chlorine trifluoride (ClF 3 ) is used as the liquid or gas containing halogen fluoride.
前記樹脂膜として、エポキシ樹脂を用いることを特徴とする半導体装置の作製方法。 In any one of Claims 12 to 20,
An epoxy resin is used as the resin film. A method for manufacturing a semiconductor device.
前記基板として、ガラス基板または石英基板を用いることを特徴とする半導体装置の作製方法。 In any one of Claims 12 to 21,
A method for manufacturing a semiconductor device, wherein a glass substrate or a quartz substrate is used as the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005220262A JP5041686B2 (en) | 2004-07-30 | 2005-07-29 | Method for peeling thin film integrated circuit and method for manufacturing semiconductor device |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004224803 | 2004-07-30 | ||
| JP2004224762 | 2004-07-30 | ||
| JP2004224803 | 2004-07-30 | ||
| JP2004224762 | 2004-07-30 | ||
| JP2005220262A JP5041686B2 (en) | 2004-07-30 | 2005-07-29 | Method for peeling thin film integrated circuit and method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006066906A JP2006066906A (en) | 2006-03-09 |
| JP2006066906A5 true JP2006066906A5 (en) | 2008-08-07 |
| JP5041686B2 JP5041686B2 (en) | 2012-10-03 |
Family
ID=36113046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005220262A Expired - Fee Related JP5041686B2 (en) | 2004-07-30 | 2005-07-29 | Method for peeling thin film integrated circuit and method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5041686B2 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007108371A1 (en) * | 2006-03-15 | 2007-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5469799B2 (en) | 2006-03-15 | 2014-04-16 | 株式会社半導体エネルギー研究所 | Semiconductor device that communicates data by wireless communication |
| TWI611565B (en) | 2006-09-29 | 2018-01-11 | 半導體能源研究所股份有限公司 | Method for manufacturing semiconductor device |
| US8137417B2 (en) | 2006-09-29 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Peeling apparatus and manufacturing apparatus of semiconductor device |
| US7968382B2 (en) | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| KR101030765B1 (en) | 2007-02-27 | 2011-04-27 | 후지쯔 세미컨덕터 가부시키가이샤 | Semiconductor storage unit, process for manufacturing the same, and method of forming package resin |
| US7973316B2 (en) * | 2007-03-26 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| KR101026040B1 (en) * | 2008-11-13 | 2011-03-30 | 삼성전기주식회사 | Fabrication method of thin film device |
| US8476119B2 (en) * | 2009-03-04 | 2013-07-02 | Sri International | Encapsulation methods and dielectric layers for organic electrical devices |
| JP2011181591A (en) * | 2010-02-26 | 2011-09-15 | Sumitomo Chemical Co Ltd | Thin film semiconductor device, apparatus for manufacturing thin film semiconductor device, and method for manufacturing thin film semiconductor device |
| US9159635B2 (en) * | 2011-05-27 | 2015-10-13 | Mc10, Inc. | Flexible electronic structure |
| KR101174834B1 (en) | 2012-04-05 | 2012-08-17 | 주식회사 다보씨앤엠 | Method for manufacturing of flexible substrate and process film using the same |
| CN106605294B (en) * | 2014-08-26 | 2020-01-21 | 株式会社尼康 | Element manufacturing method and transfer substrate |
| US9496165B1 (en) | 2015-07-09 | 2016-11-15 | International Business Machines Corporation | Method of forming a flexible semiconductor layer and devices on a flexible carrier |
| CN108109950A (en) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and its manufacturing method and electronic device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4748859B2 (en) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | Method for manufacturing light emitting device |
| JP2002353235A (en) * | 2001-05-23 | 2002-12-06 | Matsushita Electric Ind Co Ltd | Active matrix substrate, display using the same, and its manufacturing method |
| EP2565924B1 (en) * | 2001-07-24 | 2018-01-10 | Samsung Electronics Co., Ltd. | Transfer method |
| JP4373085B2 (en) * | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | Semiconductor device manufacturing method, peeling method, and transfer method |
| TWI330269B (en) * | 2002-12-27 | 2010-09-11 | Semiconductor Energy Lab | Separating method |
-
2005
- 2005-07-29 JP JP2005220262A patent/JP5041686B2/en not_active Expired - Fee Related
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