JP5038117B2 - トンネル型磁気抵抗多層膜製造方法 - Google Patents
トンネル型磁気抵抗多層膜製造方法 Download PDFInfo
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- 238000004544 sputter deposition Methods 0.000 claims description 49
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 39
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 39
- 229910001882 dioxygen Inorganic materials 0.000 claims description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 32
- 125000006850 spacer group Chemical group 0.000 claims description 23
- 229910052786 argon Inorganic materials 0.000 claims description 22
- 229910052743 krypton Inorganic materials 0.000 claims description 22
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 229910019041 PtMn Inorganic materials 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052724 xenon Inorganic materials 0.000 claims description 5
- 229910003321 CoFe Inorganic materials 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000011572 manganese Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 230000005641 tunneling Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 184
- 230000005291 magnetic effect Effects 0.000 description 62
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 11
- 238000002474 experimental method Methods 0.000 description 10
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
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- 230000001419 dependent effect Effects 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- 230000002401 inhibitory effect Effects 0.000 description 2
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
図11は、界面の平坦性の悪化に起因した層間結合の発生メカニズムについて示した図である。例えば磁化固定層24が表面に大きな凹凸を持ったものとして形成され、その結果、図11に示すように、非磁性スペーサ層25及び磁化自由層26も大きな凹凸を持ったものとして形成された場合を想定する。
PtMn膜又はIrMn膜からなる反強磁性層の薄膜をスパッタリングにより作製する工程において、スパッタ用ガスとして、アルゴンより原子番号の大きな元素のクリプトン(Kr)ガス又はキセノン(Xe)ガスを10%以上50%以下の流量で使用し、
前記磁化固定層、前記非磁性スペーサ層及び前記磁化自由層をスパッタリングにより作製する工程において、スパッタ用ガスとして、アルゴンガスを使用するという構成を有する。
また、上記課題を解決するため、請求項3記載の発明は、前記請求項1の構成において、前記PtMn膜又はIrMn膜からなる反強磁性層の薄膜をスパッタリングにより作製する工程におけるスパッタ用ガスが、ArとKrとの混合ガスであり、更に酸素ガスを添加するという構成を有する。
また、上記課題を解決するため、請求項5記載の発明は、前記請求項1〜3のいずれかの構成において、スパッタリングに用いる前記ターゲットの材料が、白金(原子番号78)とマンガン(原子番号25)とから成るものであるという構成を有する。
図2に示す成膜チャンバー3は、内部を排気する排気系31と、成膜チャンバー3内の所定位置に基板1を配置するための基板ホルダー32と、スパッタ放電を生じさせるための複数のカソード33,34と、各カソード33,34に電圧を印加する不図示のスパッタ電源等を備えている。
21 シード層
22 下地層
23 半強磁性層
24 磁化固定層
25 非磁性スペーサ層
26 磁化自由層
3 成膜チャンバー
37 ガス導入系
Claims (5)
- 基板上に、反強磁性層と、該反強磁性層との結合により磁化の向きが固定されている磁化固定層と、非磁性スペーサ層と、磁化の向きが自由である磁化自由層とを順にスパッタリングにより積層することでトンネル型磁気抵抗多層膜を製造する方法であって、
PtMn膜又はIrMn膜からなる反強磁性層の薄膜をスパッタリングにより作製する工程において、スパッタ用ガスとして、アルゴンより原子番号の大きな元素のクリプトン(Kr)ガス又はキセノン(Xe)ガスを10%以上50%以下の流量で使用し、
前記磁化固定層、前記非磁性スペーサ層及び前記磁化自由層をスパッタリングにより作製する工程において、スパッタ用ガスとして、アルゴンガスを使用することを特徴とするトンネル型磁気抵抗多層膜製造方法。 - 前記PtMn膜又はIrMn膜からなる反強磁性層の薄膜をスパッタリングにより作製する工程におけるスパッタ用ガスがArとKrとの混合ガス又はArとXeとの混合ガスであることを特徴とする、請求項1に記載のトンネル型磁気抵抗多層膜製造方法。
- 前記PtMn膜又はIrMn膜からなる反強磁性層の薄膜をスパッタリングにより作製する工程におけるスパッタ用ガスが、ArとKrとの混合ガスであり、更に酸素ガスを添加することを特徴とする請求項1に記載のトンネル型磁気抵抗多層膜製造方法。
- 前記磁化固定層が、CoFe膜であり、前記非磁性スペーサ層が、アルミナであり、前記磁化自由層が、NiFe膜であることを特徴とする請求項1から3のいずれか一項に記載のトンネル型磁気抵抗多層膜製造方法。
- スパッタリングに用いる前記ターゲットの材料が、白金(原子番号78)とマンガン(原子番号25)とから成るものである請求項1から3のいずれか1項に記載のトンネル型磁気抵抗多層膜製造方法。
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US9780299B2 (en) | 2015-11-23 | 2017-10-03 | Headway Technologies, Inc. | Multilayer structure for reducing film roughness in magnetic devices |
US10115892B2 (en) | 2015-11-23 | 2018-10-30 | Headway Technologies, Inc. | Multilayer structure for reducing film roughness in magnetic devices |
US10475564B2 (en) * | 2016-06-29 | 2019-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation |
US10622047B2 (en) | 2018-03-23 | 2020-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer |
US10522752B1 (en) | 2018-08-22 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement |
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JPH0752305B2 (ja) * | 1985-12-11 | 1995-06-05 | キヤノン株式会社 | 電子写真感光体の製造方法 |
JPH08129721A (ja) * | 1994-09-08 | 1996-05-21 | Sumitomo Metal Ind Ltd | NiO反強磁性膜の製造方法並びに磁気抵抗効果素子の製造方法とその素子 |
JP3593761B2 (ja) * | 1995-10-26 | 2004-11-24 | 富士通株式会社 | 酸化物磁性体及びその製造方法 |
JP3137580B2 (ja) * | 1996-06-14 | 2001-02-26 | ティーディーケイ株式会社 | 磁性多層膜、磁気抵抗効果素子および磁気変換素子 |
JP3761287B2 (ja) * | 1997-05-29 | 2006-03-29 | Tdk株式会社 | 光記録媒体およびその製造方法 |
JP2962415B2 (ja) * | 1997-10-22 | 1999-10-12 | アルプス電気株式会社 | 交換結合膜 |
JPH11296823A (ja) * | 1998-04-09 | 1999-10-29 | Nec Corp | 磁気抵抗効果素子およびその製造方法、ならびに磁気抵抗効果センサ,磁気記録システム |
JPH11330588A (ja) * | 1998-05-20 | 1999-11-30 | Sony Corp | 磁気抵抗効果素子およびその製造方法、ならびに磁気記録再生装置 |
US6268036B1 (en) * | 1998-06-26 | 2001-07-31 | International Business Machines Corporation | Thin film disk with highly faulted crystalline underlayer |
US6201671B1 (en) * | 1998-12-04 | 2001-03-13 | International Business Machines Corporation | Seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor |
JP3601690B2 (ja) * | 1999-03-02 | 2004-12-15 | 松下電器産業株式会社 | 磁気抵抗効果素子とその製造方法、磁気抵抗効果型ヘッド、磁気記録装置、磁気抵抗効果メモリ素子 |
JP4403337B2 (ja) * | 2000-05-30 | 2010-01-27 | ソニー株式会社 | トンネル磁気抵抗効果素子、及びトンネル磁気抵抗効果型磁気ヘッド |
JP3839644B2 (ja) * | 2000-07-11 | 2006-11-01 | アルプス電気株式会社 | 交換結合膜と、この交換結合膜を用いた磁気抵抗効果素子、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッド |
JP2002167661A (ja) * | 2000-11-30 | 2002-06-11 | Anelva Corp | 磁性多層膜作製装置 |
US6721144B2 (en) * | 2001-01-04 | 2004-04-13 | International Business Machines Corporation | Spin valves with co-ferrite pinning layer |
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