JP5033015B2 - 露光装置、露光方法及びデバイス製造方法 - Google Patents

露光装置、露光方法及びデバイス製造方法 Download PDF

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Publication number
JP5033015B2
JP5033015B2 JP2008035084A JP2008035084A JP5033015B2 JP 5033015 B2 JP5033015 B2 JP 5033015B2 JP 2008035084 A JP2008035084 A JP 2008035084A JP 2008035084 A JP2008035084 A JP 2008035084A JP 5033015 B2 JP5033015 B2 JP 5033015B2
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JP
Japan
Prior art keywords
optical system
birefringence
projection optical
light
measurement unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008035084A
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English (en)
Japanese (ja)
Other versions
JP2009194238A (ja
JP2009194238A5 (enExample
Inventor
直人 林
真一郎 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008035084A priority Critical patent/JP5033015B2/ja
Priority to US12/369,581 priority patent/US7889319B2/en
Priority to TW098104359A priority patent/TWI411888B/zh
Priority to KR1020090012032A priority patent/KR101062075B1/ko
Publication of JP2009194238A publication Critical patent/JP2009194238A/ja
Publication of JP2009194238A5 publication Critical patent/JP2009194238A5/ja
Application granted granted Critical
Publication of JP5033015B2 publication Critical patent/JP5033015B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2008035084A 2008-02-15 2008-02-15 露光装置、露光方法及びデバイス製造方法 Expired - Fee Related JP5033015B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008035084A JP5033015B2 (ja) 2008-02-15 2008-02-15 露光装置、露光方法及びデバイス製造方法
US12/369,581 US7889319B2 (en) 2008-02-15 2009-02-11 Exposure apparatus and device fabrication method
TW098104359A TWI411888B (zh) 2008-02-15 2009-02-11 曝光設備及裝置製造方法
KR1020090012032A KR101062075B1 (ko) 2008-02-15 2009-02-13 노광 장치 및 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008035084A JP5033015B2 (ja) 2008-02-15 2008-02-15 露光装置、露光方法及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2009194238A JP2009194238A (ja) 2009-08-27
JP2009194238A5 JP2009194238A5 (enExample) 2011-03-31
JP5033015B2 true JP5033015B2 (ja) 2012-09-26

Family

ID=40954831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008035084A Expired - Fee Related JP5033015B2 (ja) 2008-02-15 2008-02-15 露光装置、露光方法及びデバイス製造方法

Country Status (4)

Country Link
US (1) US7889319B2 (enExample)
JP (1) JP5033015B2 (enExample)
KR (1) KR101062075B1 (enExample)
TW (1) TWI411888B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009015393B3 (de) * 2009-03-20 2010-09-02 Carl Zeiss Smt Ag Messverfahren und Messsystem zur Messung der Doppelbrechung
US8960909B2 (en) * 2012-01-20 2015-02-24 Canon Kabushiki Kaisha Control apparatus and control method
KR102527672B1 (ko) * 2018-04-06 2023-04-28 에이에스엠엘 네델란즈 비.브이. 비선형 광학계를 갖는 검사 장치
CN111883408B (zh) * 2020-08-13 2025-03-14 深圳市奥谱太赫兹技术研究院 多电子束聚焦装置和控制方法
JP7750648B2 (ja) * 2020-10-23 2025-10-07 レーザーテック株式会社 測定装置、及び測定方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001296206A (ja) * 2000-04-13 2001-10-26 Nikon Corp 複屈折測定装置及び複屈折測定方法
JP2002071515A (ja) * 2000-08-31 2002-03-08 Canon Inc 測定装置及び測定方法
KR100379521B1 (ko) 2000-11-27 2003-04-10 주식회사 하이닉스반도체 반도체 소자의 제조방법
JP2004061515A (ja) * 2002-07-29 2004-02-26 Cark Zeiss Smt Ag 光学系による偏光状態への影響を決定する方法及び装置と、分析装置
JP3971363B2 (ja) * 2003-10-07 2007-09-05 株式会社東芝 露光装置及び露光装置の光学系のミュラー行列を測定する方法
JP2006214856A (ja) * 2005-02-03 2006-08-17 Canon Inc 測定装置及び方法
JP4976670B2 (ja) * 2005-08-24 2012-07-18 キヤノン株式会社 露光装置及びデバイス製造方法
US7605914B2 (en) * 2005-09-29 2009-10-20 Carl Zeiss Smt Ag Optical system and method for improving imaging properties thereof
JP2008277632A (ja) * 2007-05-01 2008-11-13 Canon Inc 測定方法、測定装置、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
TW201001085A (en) 2010-01-01
TWI411888B (zh) 2013-10-11
JP2009194238A (ja) 2009-08-27
US7889319B2 (en) 2011-02-15
KR101062075B1 (ko) 2011-09-02
KR20090088825A (ko) 2009-08-20
US20090207400A1 (en) 2009-08-20

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