KR101062075B1 - 노광 장치 및 디바이스 제조 방법 - Google Patents

노광 장치 및 디바이스 제조 방법 Download PDF

Info

Publication number
KR101062075B1
KR101062075B1 KR1020090012032A KR20090012032A KR101062075B1 KR 101062075 B1 KR101062075 B1 KR 101062075B1 KR 1020090012032 A KR1020090012032 A KR 1020090012032A KR 20090012032 A KR20090012032 A KR 20090012032A KR 101062075 B1 KR101062075 B1 KR 101062075B1
Authority
KR
South Korea
Prior art keywords
optical system
projection optical
birefringence
imaging
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020090012032A
Other languages
English (en)
Korean (ko)
Other versions
KR20090088825A (ko
Inventor
나오또 하야시
신이찌로 히라이
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20090088825A publication Critical patent/KR20090088825A/ko
Application granted granted Critical
Publication of KR101062075B1 publication Critical patent/KR101062075B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020090012032A 2008-02-15 2009-02-13 노광 장치 및 디바이스 제조 방법 Expired - Fee Related KR101062075B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-035084 2008-02-15
JP2008035084A JP5033015B2 (ja) 2008-02-15 2008-02-15 露光装置、露光方法及びデバイス製造方法

Publications (2)

Publication Number Publication Date
KR20090088825A KR20090088825A (ko) 2009-08-20
KR101062075B1 true KR101062075B1 (ko) 2011-09-02

Family

ID=40954831

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090012032A Expired - Fee Related KR101062075B1 (ko) 2008-02-15 2009-02-13 노광 장치 및 디바이스 제조 방법

Country Status (4)

Country Link
US (1) US7889319B2 (enExample)
JP (1) JP5033015B2 (enExample)
KR (1) KR101062075B1 (enExample)
TW (1) TWI411888B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009015393B3 (de) * 2009-03-20 2010-09-02 Carl Zeiss Smt Ag Messverfahren und Messsystem zur Messung der Doppelbrechung
US8960909B2 (en) * 2012-01-20 2015-02-24 Canon Kabushiki Kaisha Control apparatus and control method
IL277639B2 (en) * 2018-04-06 2023-10-01 Asml Netherlands Bv Inspection apparatus having non-linear optics
CN111883408B (zh) * 2020-08-13 2025-03-14 深圳市奥谱太赫兹技术研究院 多电子束聚焦装置和控制方法
JP7750648B2 (ja) * 2020-10-23 2025-10-07 レーザーテック株式会社 測定装置、及び測定方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100379521B1 (ko) 2000-11-27 2003-04-10 주식회사 하이닉스반도체 반도체 소자의 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001296206A (ja) * 2000-04-13 2001-10-26 Nikon Corp 複屈折測定装置及び複屈折測定方法
JP2002071515A (ja) * 2000-08-31 2002-03-08 Canon Inc 測定装置及び測定方法
JP2004061515A (ja) * 2002-07-29 2004-02-26 Cark Zeiss Smt Ag 光学系による偏光状態への影響を決定する方法及び装置と、分析装置
JP3971363B2 (ja) * 2003-10-07 2007-09-05 株式会社東芝 露光装置及び露光装置の光学系のミュラー行列を測定する方法
JP2006214856A (ja) * 2005-02-03 2006-08-17 Canon Inc 測定装置及び方法
JP4976670B2 (ja) 2005-08-24 2012-07-18 キヤノン株式会社 露光装置及びデバイス製造方法
US7605914B2 (en) * 2005-09-29 2009-10-20 Carl Zeiss Smt Ag Optical system and method for improving imaging properties thereof
JP2008277632A (ja) * 2007-05-01 2008-11-13 Canon Inc 測定方法、測定装置、露光装置及びデバイス製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100379521B1 (ko) 2000-11-27 2003-04-10 주식회사 하이닉스반도체 반도체 소자의 제조방법

Also Published As

Publication number Publication date
US20090207400A1 (en) 2009-08-20
TW201001085A (en) 2010-01-01
TWI411888B (zh) 2013-10-11
KR20090088825A (ko) 2009-08-20
US7889319B2 (en) 2011-02-15
JP5033015B2 (ja) 2012-09-26
JP2009194238A (ja) 2009-08-27

Similar Documents

Publication Publication Date Title
KR100856976B1 (ko) 노광장치 및 디바이스 제조방법
KR100991067B1 (ko) 위치검출장치의 조정방법, 노광장치 및 디바이스 제조방법
KR20090034784A (ko) 측정 장치, 노광 장치 및 디바이스 제조 방법
JP2005005521A (ja) 露光装置、露光方法、および偏光状態測定装置
JP2009068922A (ja) 測定装置、露光装置及びデバイス製造方法
US7619748B2 (en) Exposure apparatus mounted with measuring apparatus
KR102195269B1 (ko) 마이크로리소그라피용 마스크의 특징을 구하는 방법 및 디바이스
US7955765B2 (en) Adjustment method, exposure method, device manufacturing method, and exposure apparatus
TW200921282A (en) Measurement apparatus, exposure apparatus, and semiconductor device manufacturing method
US6961132B2 (en) Interference system and semiconductor exposure apparatus having the same
KR101062075B1 (ko) 노광 장치 및 디바이스 제조 방법
CN101609266A (zh) 一种光刻机投影物镜波像差的现场测量装置
US7276717B2 (en) Measuring apparatus, exposure apparatus and device manufacturing method
KR20080036927A (ko) 투영노광장치, 광학부품 및 디바이스의 제조방법
JP5448494B2 (ja) 偏光計測装置、露光装置、及びデバイス製造方法
US6963408B2 (en) Method and apparatus for point diffraction interferometry
JP4976670B2 (ja) 露光装置及びデバイス製造方法
US7573563B2 (en) Exposure apparatus and device manufacturing method
US7602504B2 (en) Exposure apparatus and device manufacturing method
JP5346985B2 (ja) 計測装置、露光装置、デバイスの製造方法及び計測方法
JP2007263897A (ja) 偏光計測装置の校正方法及び装置、偏光計測装置及び該装置を備えた露光装置、並びに位相遅れ量の計測方法及び波長板
US20060055915A1 (en) Measuring apparatus, test reticle, exposure apparatus and device manufacturing method
JPH01181520A (ja) 露光装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140728

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150727

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160725

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170725

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180830

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180830

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000