TWI411888B - 曝光設備及裝置製造方法 - Google Patents
曝光設備及裝置製造方法 Download PDFInfo
- Publication number
- TWI411888B TWI411888B TW098104359A TW98104359A TWI411888B TW I411888 B TWI411888 B TW I411888B TW 098104359 A TW098104359 A TW 098104359A TW 98104359 A TW98104359 A TW 98104359A TW I411888 B TWI411888 B TW I411888B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- birefringence
- projection optical
- unit
- measuring unit
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 247
- 238000003384 imaging method Methods 0.000 claims abstract description 56
- 238000005259 measurement Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims 1
- 230000000644 propagated effect Effects 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 description 24
- 230000010287 polarization Effects 0.000 description 23
- 230000009897 systematic effect Effects 0.000 description 11
- 230000004075 alteration Effects 0.000 description 10
- 238000005452 bending Methods 0.000 description 8
- 210000001747 pupil Anatomy 0.000 description 7
- 239000000835 fiber Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000012634 optical imaging Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008035084A JP5033015B2 (ja) | 2008-02-15 | 2008-02-15 | 露光装置、露光方法及びデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201001085A TW201001085A (en) | 2010-01-01 |
| TWI411888B true TWI411888B (zh) | 2013-10-11 |
Family
ID=40954831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098104359A TWI411888B (zh) | 2008-02-15 | 2009-02-11 | 曝光設備及裝置製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7889319B2 (enExample) |
| JP (1) | JP5033015B2 (enExample) |
| KR (1) | KR101062075B1 (enExample) |
| TW (1) | TWI411888B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009015393B3 (de) * | 2009-03-20 | 2010-09-02 | Carl Zeiss Smt Ag | Messverfahren und Messsystem zur Messung der Doppelbrechung |
| US8960909B2 (en) * | 2012-01-20 | 2015-02-24 | Canon Kabushiki Kaisha | Control apparatus and control method |
| KR102527672B1 (ko) * | 2018-04-06 | 2023-04-28 | 에이에스엠엘 네델란즈 비.브이. | 비선형 광학계를 갖는 검사 장치 |
| CN111883408B (zh) * | 2020-08-13 | 2025-03-14 | 深圳市奥谱太赫兹技术研究院 | 多电子束聚焦装置和控制方法 |
| JP7750648B2 (ja) * | 2020-10-23 | 2025-10-07 | レーザーテック株式会社 | 測定装置、及び測定方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100379521B1 (ko) * | 2000-11-27 | 2003-04-10 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| US7106452B2 (en) * | 2000-08-31 | 2006-09-12 | Canon Kabushiki Kaisha | Measuring device and measuring method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001296206A (ja) * | 2000-04-13 | 2001-10-26 | Nikon Corp | 複屈折測定装置及び複屈折測定方法 |
| JP2004061515A (ja) * | 2002-07-29 | 2004-02-26 | Cark Zeiss Smt Ag | 光学系による偏光状態への影響を決定する方法及び装置と、分析装置 |
| JP3971363B2 (ja) * | 2003-10-07 | 2007-09-05 | 株式会社東芝 | 露光装置及び露光装置の光学系のミュラー行列を測定する方法 |
| JP2006214856A (ja) * | 2005-02-03 | 2006-08-17 | Canon Inc | 測定装置及び方法 |
| JP4976670B2 (ja) * | 2005-08-24 | 2012-07-18 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| US7605914B2 (en) * | 2005-09-29 | 2009-10-20 | Carl Zeiss Smt Ag | Optical system and method for improving imaging properties thereof |
| JP2008277632A (ja) * | 2007-05-01 | 2008-11-13 | Canon Inc | 測定方法、測定装置、露光装置及びデバイス製造方法 |
-
2008
- 2008-02-15 JP JP2008035084A patent/JP5033015B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-11 US US12/369,581 patent/US7889319B2/en not_active Expired - Fee Related
- 2009-02-11 TW TW098104359A patent/TWI411888B/zh not_active IP Right Cessation
- 2009-02-13 KR KR1020090012032A patent/KR101062075B1/ko not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7106452B2 (en) * | 2000-08-31 | 2006-09-12 | Canon Kabushiki Kaisha | Measuring device and measuring method |
| KR100379521B1 (ko) * | 2000-11-27 | 2003-04-10 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201001085A (en) | 2010-01-01 |
| JP5033015B2 (ja) | 2012-09-26 |
| JP2009194238A (ja) | 2009-08-27 |
| US7889319B2 (en) | 2011-02-15 |
| KR101062075B1 (ko) | 2011-09-02 |
| KR20090088825A (ko) | 2009-08-20 |
| US20090207400A1 (en) | 2009-08-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |