JP5020079B2 - 均一なエッチング特性を有する層を提供する方法及び組成物 - Google Patents

均一なエッチング特性を有する層を提供する方法及び組成物 Download PDF

Info

Publication number
JP5020079B2
JP5020079B2 JP2007527859A JP2007527859A JP5020079B2 JP 5020079 B2 JP5020079 B2 JP 5020079B2 JP 2007527859 A JP2007527859 A JP 2007527859A JP 2007527859 A JP2007527859 A JP 2007527859A JP 5020079 B2 JP5020079 B2 JP 5020079B2
Authority
JP
Japan
Prior art keywords
composition
silicon
component
acrylic acid
trimethylsiloxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2007527859A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008509815A (ja
JP2008509815A5 (enExample
Inventor
シュ,フランク・ワイ
ステイシー,ニコラス・エイ
Original Assignee
モレキュラー・インプリンツ・インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/919,062 external-priority patent/US7282550B2/en
Priority claimed from US10/919,224 external-priority patent/US7939131B2/en
Application filed by モレキュラー・インプリンツ・インコーポレーテッド filed Critical モレキュラー・インプリンツ・インコーポレーテッド
Publication of JP2008509815A publication Critical patent/JP2008509815A/ja
Publication of JP2008509815A5 publication Critical patent/JP2008509815A5/ja
Application granted granted Critical
Publication of JP5020079B2 publication Critical patent/JP5020079B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
JP2007527859A 2004-08-16 2005-08-05 均一なエッチング特性を有する層を提供する方法及び組成物 Expired - Lifetime JP5020079B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/919,062 2004-08-16
US10/919,062 US7282550B2 (en) 2004-08-16 2004-08-16 Composition to provide a layer with uniform etch characteristics
US10/919,224 2004-08-16
US10/919,224 US7939131B2 (en) 2004-08-16 2004-08-16 Method to provide a layer with uniform etch characteristics
PCT/US2005/027933 WO2006023297A1 (en) 2004-08-16 2005-08-05 Method and composition to provide a layer with uniform etch characteristics

Publications (3)

Publication Number Publication Date
JP2008509815A JP2008509815A (ja) 2008-04-03
JP2008509815A5 JP2008509815A5 (enExample) 2011-03-03
JP5020079B2 true JP5020079B2 (ja) 2012-09-05

Family

ID=35967849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007527859A Expired - Lifetime JP5020079B2 (ja) 2004-08-16 2005-08-05 均一なエッチング特性を有する層を提供する方法及び組成物

Country Status (3)

Country Link
JP (1) JP5020079B2 (enExample)
TW (1) TWI291204B (enExample)
WO (1) WO2006023297A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8142850B2 (en) * 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US8707890B2 (en) * 2006-07-18 2014-04-29 Asml Netherlands B.V. Imprint lithography
WO2008154059A2 (en) 2007-04-02 2008-12-18 Regents Of The University Of California Rotating frame gradient fields for mri and nmr in low polarizing magnetic fields
JP4908369B2 (ja) * 2007-10-02 2012-04-04 株式会社東芝 インプリント方法及びインプリントシステム
US20090212012A1 (en) * 2008-02-27 2009-08-27 Molecular Imprints, Inc. Critical dimension control during template formation
NL2003875A (en) * 2009-02-04 2010-08-05 Asml Netherlands Bv Imprint lithography method and apparatus.
JP5887871B2 (ja) * 2011-11-24 2016-03-16 富士通株式会社 被膜形成材料及びパターン形成方法
JP6071255B2 (ja) * 2012-06-04 2017-02-01 キヤノン株式会社 光硬化物
US10892167B2 (en) * 2019-03-05 2021-01-12 Canon Kabushiki Kaisha Gas permeable superstrate and methods of using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5170192A (en) * 1990-11-29 1992-12-08 Pilkington Visioncare, Inc. Oxygen permeable bifocal contact lenses and their manufacture
US6143433A (en) * 1994-09-14 2000-11-07 Mitsui Chemicals, Inc. Organic electroluminescent device and process for producing the same
US20030124853A1 (en) * 1998-06-25 2003-07-03 Mitsubishi Materials Silicon Corporation Anisotropic etching method and apparatus
JP4551620B2 (ja) * 2001-05-29 2010-09-29 エシロール アテルナジオナール カンパニー ジェネラーレ デ オプティック 現場で被覆された光学物品を形成させる方法
MY144124A (en) * 2002-07-11 2011-08-15 Molecular Imprints Inc Step and repeat imprint lithography systems

Also Published As

Publication number Publication date
TW200612492A (en) 2006-04-16
TWI291204B (en) 2007-12-11
JP2008509815A (ja) 2008-04-03
WO2006023297A1 (en) 2006-03-02

Similar Documents

Publication Publication Date Title
US7939131B2 (en) Method to provide a layer with uniform etch characteristics
US7282550B2 (en) Composition to provide a layer with uniform etch characteristics
KR101121015B1 (ko) 모세관 임프린트 기술
US7365103B2 (en) Compositions for dark-field polymerization and method of using the same for imprint lithography processes
CN100572032C (zh) 减少贴合区与模具图案之间的粘合的方法
US8066930B2 (en) Forming a layer on a substrate
US7179396B2 (en) Positive tone bi-layer imprint lithography method
US8349241B2 (en) Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7179079B2 (en) Conforming template for patterning liquids disposed on substrates
JP4942657B2 (ja) 液体凝固の酸素阻害を減衰させる重合技術及びそのための組成物
US7858528B2 (en) Positive tone bi-layer method
US7452574B2 (en) Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US20050156357A1 (en) Planarization method of patterning a substrate
US20030235787A1 (en) Low viscosity high resolution patterning material
JP5020079B2 (ja) 均一なエッチング特性を有する層を提供する方法及び組成物

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080716

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110111

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20110111

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110126

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20110324

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110412

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110712

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110720

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110812

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120216

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120522

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120612

R150 Certificate of patent or registration of utility model

Ref document number: 5020079

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150622

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250