TW200612492A - Method and composition to provide a layer with uniform etch characteristics - Google Patents
Method and composition to provide a layer with uniform etch characteristicsInfo
- Publication number
- TW200612492A TW200612492A TW094127323A TW94127323A TW200612492A TW 200612492 A TW200612492 A TW 200612492A TW 094127323 A TW094127323 A TW 094127323A TW 94127323 A TW94127323 A TW 94127323A TW 200612492 A TW200612492 A TW 200612492A
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- layer
- components
- evaporation
- rate
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
The present invention includes a method and a composition to form a layer on a substrate having uniform etch characteristics. To that end, the method includes depositing a polymerizable liquid on the substrate as a composition of a plurality of components. Each of the components has a rate of evaporation associated therewith. The polymerizable composition is then solidified. A relative rate of evaporation associated with a subset of the plurality of components is established to be within a predetermined range. Specifically, the present invention is based upon the discovery that etch non-uniformity in a layer that is formed by solidification of a deposited liquid is a function of the relative rates of evaporation of the components that form the layer. As a result, the composition is formed of a plurality of components, a subset of which has a substantially identical rate of evaporation for an interval of time.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/919,062 US7282550B2 (en) | 2004-08-16 | 2004-08-16 | Composition to provide a layer with uniform etch characteristics |
US10/919,224 US7939131B2 (en) | 2004-08-16 | 2004-08-16 | Method to provide a layer with uniform etch characteristics |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200612492A true TW200612492A (en) | 2006-04-16 |
TWI291204B TWI291204B (en) | 2007-12-11 |
Family
ID=35967849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94127323A TWI291204B (en) | 2004-08-16 | 2005-08-11 | Method and composition to provide a layer with uniform etch characteristics |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5020079B2 (en) |
TW (1) | TWI291204B (en) |
WO (1) | WO2006023297A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8142850B2 (en) * | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
US8707890B2 (en) * | 2006-07-18 | 2014-04-29 | Asml Netherlands B.V. | Imprint lithography |
US8633693B2 (en) | 2007-04-02 | 2014-01-21 | The Regents Of The University Of California | Rotating-frame gradient fields for magnetic resonance imaging and nuclear magnetic resonance in low fields |
JP4908369B2 (en) * | 2007-10-02 | 2012-04-04 | 株式会社東芝 | Imprint method and imprint system |
US20090212012A1 (en) * | 2008-02-27 | 2009-08-27 | Molecular Imprints, Inc. | Critical dimension control during template formation |
NL2003875A (en) | 2009-02-04 | 2010-08-05 | Asml Netherlands Bv | Imprint lithography method and apparatus. |
JP5887871B2 (en) * | 2011-11-24 | 2016-03-16 | 富士通株式会社 | Film forming material and pattern forming method |
JP6071255B2 (en) * | 2012-06-04 | 2017-02-01 | キヤノン株式会社 | Photocured material |
US10892167B2 (en) * | 2019-03-05 | 2021-01-12 | Canon Kabushiki Kaisha | Gas permeable superstrate and methods of using the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5170192A (en) * | 1990-11-29 | 1992-12-08 | Pilkington Visioncare, Inc. | Oxygen permeable bifocal contact lenses and their manufacture |
US6143433A (en) * | 1994-09-14 | 2000-11-07 | Mitsui Chemicals, Inc. | Organic electroluminescent device and process for producing the same |
US20030124853A1 (en) * | 1998-06-25 | 2003-07-03 | Mitsubishi Materials Silicon Corporation | Anisotropic etching method and apparatus |
EP1395417B1 (en) * | 2001-05-29 | 2006-08-02 | Essilor International Compagnie Generale D'optique | Method for forming on-site a coated optical article |
MY164487A (en) * | 2002-07-11 | 2017-12-29 | Molecular Imprints Inc | Step and repeat imprint lithography processes |
-
2005
- 2005-08-05 JP JP2007527859A patent/JP5020079B2/en active Active
- 2005-08-05 WO PCT/US2005/027933 patent/WO2006023297A1/en active Application Filing
- 2005-08-11 TW TW94127323A patent/TWI291204B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI291204B (en) | 2007-12-11 |
JP2008509815A (en) | 2008-04-03 |
WO2006023297A1 (en) | 2006-03-02 |
JP5020079B2 (en) | 2012-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |