TWI291204B - Method and composition to provide a layer with uniform etch characteristics - Google Patents

Method and composition to provide a layer with uniform etch characteristics Download PDF

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Publication number
TWI291204B
TWI291204B TW94127323A TW94127323A TWI291204B TW I291204 B TWI291204 B TW I291204B TW 94127323 A TW94127323 A TW 94127323A TW 94127323 A TW94127323 A TW 94127323A TW I291204 B TWI291204 B TW I291204B
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composition
layer
polymerizable
substrate
ruthenium
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TW94127323A
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TW200612492A (en
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Frank Y Xu
Nicholas A Stacey
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Molecular Imprints Inc
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Priority claimed from US10/919,224 external-priority patent/US7939131B2/en
Priority claimed from US10/919,062 external-priority patent/US7282550B2/en
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

The present invention includes a method and a composition to form a layer on a substrate having uniform etch characteristics. To that end, the method includes depositing a polymerizable liquid on the substrate as a composition of a plurality of components. Each of the components has a rate of evaporation associated therewith. The polymerizable composition is then solidified. A relative rate of evaporation associated with a subset of the plurality of components is established to be within a predetermined range. Specifically, the present invention is based upon the discovery that etch non-uniformity in a layer that is formed by solidification of a deposited liquid is a function of the relative rates of evaporation of the components that form the layer. As a result, the composition is formed of a plurality of components, a subset of which has a substantially identical rate of evaporation for an interval of time.

Description

1291204 九、發明說明: 【發明所屬之技術領域】 本欹明之領域概略係有關結構之微製造。更特別,本 發明係針對形成具有均勻_特性之方法及壓印材料。 發明背景 微製造涉及製造極小型結構,例如具有微米級之結構 或更小。微製造有相當影響的—個領域是積體電路之製 • 程。半導體製程產業仍然努力追求更高製造良率,同時增 10加形成於基材上之每單位面積之電路,微製造的重要性逐 漸升高。微製造可提供較大製程控制,同時允許所形成之 結構之最小結構維度繼續縮小。其它採用微製造之發展領 域包括生物技術、光學技術、機械系統等。 微製造技術之一實例顯示willson等人之美國專利第 ^匕州溯號^此加等人揭示一種於一結構形成凸纹參像 之方法。該方法包括提供-具有一轉印層之基材。該轉印 • 層係以可聚合流體組成物覆蓋。壓印裝置與該可聚合流體 ‘ 作機械接觸。壓印裝置包括由陸地及溝槽形成之 構。該可聚合流體組成物填補該凸紋結構,可聚合流俨之 2〇厚度係重疊界定剩餘厚度之陸地。該可聚合流體組成物隨 後置於固化條件下,聚合之,形成固化聚合物層於轉印層 上,其含有與該壓印裝置之凸紋結構互補的凸紋結構。然 後壓印裝置與固化聚合物層分離,讓壓印裝置之凸紋結構 之複本形成於該固化聚合物層。轉印層及固化聚合物層置 5 1291204 於選擇性蝕刻環境下,該環境相對於固化聚合物層,選擇 性蝕刻轉印層,故形成凸紋影像於該轉印層。因此,習知 餘刻方法可用來轉印凸紋結構之圖案至基材。 白知蝕刻方法形成預定圖案於_採用適當遮罩如光阻 5遮罩之層。該遮罩典型係沉積於該層上,使用圖案化遮罩 來形成圖案。然後圖案化遮罩暴露於蝕刻劑,諸如於乾蝕 刻法之離子或濕蝕刻技術之液態酸,而去除經由圖案化遮 罩暴露出之該層部分。 任一種蝕刻方法之期望特性係於接受蝕刻之表面上獲 得均勻餘刻速率。為了達成該項目的,先前技術大量嘗試 於蝕刻程序期間控制蝕刻速率。舉例言之,Haney等人之美 國專利第6,132,632號揭示一種於一反應性離子餘刻器内達 成均勻蝕刻速率之方法之裝置。反應性離子蝕刻器於真空 至内產生電漿,用來蝕刻設置於真空室内反應器罐之陰極 之基材,其中該電漿係由反應器罐之頂板冒出,受侷限化 磁%的影響來局部控制跨該陰極之蝕刻速率,由於侷限化 磁場的結果來產生跨該陰極之均勻蝕刻速率分布。磁鐵陣 列可设置於頂板與真空室間用來產生侷限化磁場。磁鐵陣 列包括多個個別磁鐵及一將個別磁鐵固定定位之一格狀 20 板。1291204 IX. Description of the invention: [Technical field to which the invention pertains] The field of the present invention is schematically related to the microfabrication of the structure. More particularly, the present invention is directed to forming a method having uniform properties and an imprint material. BACKGROUND OF THE INVENTION Microfabrication involves the fabrication of very small structures, such as those having a micron scale or smaller. One area where microfabrication has a considerable impact is the process of integrated circuits. The semiconductor manufacturing industry is still striving to achieve higher manufacturing yields, while increasing the number of circuits per unit area formed on the substrate. The importance of micro-fabrication is increasing. Microfabrication provides greater process control while allowing the smallest structural dimension of the resulting structure to continue to shrink. Other areas of development using microfabrication include biotechnology, optical technology, and mechanical systems. An example of a microfabrication technique is shown in U.S. Patent No. 5, the entire disclosure of which is incorporated herein by reference. The method includes providing a substrate having a transfer layer. The transfer • layer is covered with a polymerizable fluid composition. The imprinting device is in mechanical contact with the polymerizable fluid. The imprint apparatus includes a structure formed by land and trenches. The polymerizable fluid composition fills the relief structure, and the thickness of the polymerizable flow is overlapped to define the remaining thickness of the land. The polymerizable fluid composition is then placed under curing conditions and polymerized to form a cured polymer layer on the transfer layer which contains a relief structure complementary to the relief structure of the imprint apparatus. The imprinting device is then separated from the cured polymer layer such that a replica of the relief structure of the imprinting device is formed on the cured polymer layer. The transfer layer and the cured polymer layer are placed in a selective etching environment in which the transfer layer is selectively etched with respect to the cured polymer layer to form a relief image on the transfer layer. Therefore, the conventional engraving method can be used to transfer the pattern of the relief structure to the substrate. The white etching method forms a predetermined pattern on a layer which is covered with a suitable mask such as a photoresist 5. The mask is typically deposited on the layer using a patterned mask to form a pattern. The patterned mask is then exposed to an etchant, such as a liquid acid of a dry etching ion or wet etch technique, to remove portions of the layer that are exposed through the patterned mask. The desired characteristic of any etching method is to achieve a uniform residual rate on the surface subjected to etching. In order to achieve this, prior art attempts have been made to control the etch rate during the etching process. For example, U.S. Patent No. 6,132,632 to Haney et al. discloses a device for achieving a uniform etch rate in a reactive ion regenerator. The reactive ion etcher generates a plasma in a vacuum to etch a substrate disposed in the cathode of the reactor tank in the vacuum chamber, wherein the plasma is ejected from the top plate of the reactor tank and is affected by the localized magnetic %. To locally control the etch rate across the cathode, a uniform etch rate profile across the cathode is produced as a result of localizing the magnetic field. A magnet array can be placed between the top plate and the vacuum chamber to create a localized magnetic field. The magnet array includes a plurality of individual magnets and a grid of 20 plates that are fixedly positioned by the individual magnets.

Daugherty等人之美國專利第6,344,1〇5號揭示一種於 包桌處理系統進行離子輔助之蝕刻處理之方法及裝置。根 據本發明之各方面,揭示一升高緣環,一凹槽緣環、及一 身ί頻(RF)M合緣環。本發明操作來改良跨—基材(晶圓)之一 1291204 #刻速率均勻度。本發明提供之餘刻速率均勻度之改良, 不僅可改進製造良率,同時也具有成本效益,且無微粒污 染及/或重金屬污染的風險。A method and apparatus for ion assisted etching processing in a table processing system is disclosed in U.S. Patent No. 6,344, issued to U.S. Pat. In accordance with aspects of the present invention, a raised edge ring, a groove edge ring, and a FF (RF) M rim ring are disclosed. The present invention operates to improve one of the cross-substrate (wafer) 1291204 #etch rate uniformity. The improvement in the uniformity of the remaining rate provided by the present invention not only improves the manufacturing yield, but is also cost effective and free from the risk of particulate contamination and/or heavy metal contamination.

Meador等人之美國專利第6,576 4〇8號揭示具有改良之 5蝕刻速率之抗反射塗層組成物。該組成物係由某種丙烯酸 糸?κ合物及共t物製備,諸如甲基丙稀酸縮水甘油g旨與非 多環羧酸染料及非多環酚系染料反應而製備組成物,全部 成分皆吸收於193奈米波長之光。 除 因此’品要k供具有對進行處理之壓印材料之餘刻速 10 率有改良控制之蝕刻技術。 L發明内容3 發明概要 本發明包括-種於-基材上形成具有均句餘刻特性之 一層之方法及組成物。為了達成該項目的,該方法包括沉 15積一種可聚合液體於該基材上作為多種成分組成之組成 物。各別成为具有與其相關聯之蒸鑛速率。然後該可聚人 • '组成物經固化。與該等多種成分之一子集相關聯二相對i 鍛速率’經確立係於-預定範圍内。特別本發明係基於發 現,於經由沉積液體固化所形成之一層之触刻非均句錢 20依形成該層之各成分之相對蒸鏟速率之函數而變化。結 果,該組成物係由多種成分形成,該等多種成分之一子隽 具有貝貝上相同之蒸鍵速率經歷一段時間;此等及其—^ 體例更完整討論如。 圖式簡單說明 7 1291204 第1圖為根據本發明之一種光刻術系統之透視圖; 第2圖為根據本發明之一具體例,採用來形成圖案化壓 印層之如第1圖所示之一種光刻術系統之簡化仰視圖; 第3圖為根據本發明經形成圖案後,於第1圖所示之圖 5 案化壓印層分開之一種壓印裝置之簡化仰視圖; 第4圖為第2圖所示之基材之一區,於該區採用可聚合 流體小滴圖案沉積於其上進行圖案化之俯視圖; 第5圖為由先前技術之可聚合壓印材料沉積於一基材 上所形成之一層之剖面圖; 10 第6圖為根據先前技術,第5圖所示該層接受RIE蝕刻程 序後之剖面圖; 第7圖為線圖,顯示根據本發明,含矽可聚合之壓印材 料中之不同成分之蒸鍍速率; 第8圖為剖面圖,顯示根據本發明可採用之一離型層及 15 一底塗層; 第9圖為剖面圖,顯示施用於第8圖所示之一平坦化模 具之凸紋層;以及 第10圖為剖面圖,顯示根據本發明之另一具體例,形 成一層於一基材上。 20 【實施方式】 較佳實施例之詳細說明 第1圖顯示根據本發明之一具體例之一種光刻術系統 10,其包括一對彼此隔開之橋支承件12,其具有一橋14及 一延伸於其間之平台支承件16。橋14及平台支持件16彼此 8 1291204 隔開。麵聯至橋Μ者為一壓印頭18,該壓印頭i8係由橋i4 朝向平台支承件16延伸。設置於平台支承件i6上而面對壓An anti-reflective coating composition having an improved 5 etch rate is disclosed in U.S. Patent No. 6,576, issued to U.S. Pat. Does the composition consist of some kind of acrylic acid? Preparation of κ compounds and co-t materials, such as methacrylic acid glycidol, which is prepared by reacting with non-polycyclic carboxylic acid dyes and non-polycyclic phenolic dyes, all of which are absorbed by light having a wavelength of 193 nm. . In addition to this, there is an etching technique that has improved control over the rate of the reticle of the imprinted material being processed. SUMMARY OF THE INVENTION 3 SUMMARY OF THE INVENTION The present invention comprises a method and composition for forming a layer having uniform remnant characteristics on a substrate. To achieve this, the method includes depositing a polymerizable liquid on the substrate as a constituent of a plurality of components. Each becomes a steaming rate associated therewith. Then the concentratable person's composition is cured. The relative i-forging rate associated with a subset of the plurality of components is established within a predetermined range. In particular, the present invention is based on the discovery that the tactile non-uniformity 20 of a layer formed by solidification of the deposition liquid varies as a function of the relative steaming rate of the components forming the layer. As a result, the composition is formed from a plurality of components, and one of the plurality of components has a similar steaming rate on the babe for a period of time; such a discussion is more fully discussed. BRIEF DESCRIPTION OF THE DRAWINGS 7 1291204 FIG. 1 is a perspective view of a lithography system according to the present invention; FIG. 2 is a view showing the formation of a patterned imprint layer as shown in FIG. 1 according to an embodiment of the present invention. A simplified bottom view of a lithography system; FIG. 3 is a simplified bottom view of an imprinting apparatus separated from the embossed layer of FIG. 5 after being patterned according to the present invention; Figure 2 is a top view of the substrate shown in Figure 2, in which the polymerized fluid droplet pattern is deposited thereon for patterning; Figure 5 is a deposition of the polymerizable imprint material from the prior art. A cross-sectional view of a layer formed on a substrate; 10 FIG. 6 is a cross-sectional view of the layer after receiving the RIE etching process according to the prior art; FIG. 7 is a line diagram showing the inclusion of germanium according to the present invention. The vapor deposition rate of the different components in the polymerizable imprint material; Fig. 8 is a cross-sectional view showing that one release layer and 15 primer layer can be used according to the present invention; and Fig. 9 is a cross-sectional view showing application to One of the relief layers of the flattening mold shown in Figure 8; 10 photo shows a cross-sectional view showing another embodiment according to the present invention, a layer formed on a substrate. 20 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A first embodiment of a lithography system 10 according to one embodiment of the present invention includes a pair of spaced apart bridge supports 12 having a bridge 14 and a A platform support 16 extends therebetween. The bridge 14 and platform support 16 are spaced apart from each other 8 1291204. The face to the bridge is an embossing head 18 which extends from the bridge i4 towards the platform support 16. Set on the platform support member i6 to face the pressure

印頭18者為一移動平台2〇。移動平台_組配來沿X軸及Y 軸相對於平台支承件16移動,也可提供沿冰之移動。一輕 5射源22耦接至系統1〇,來發射光化輕射於移動平台2〇上。 如圖所示,轄射源22係搞接至橋14,且包括一電源產生器 23連結至輻射源22。 參照第1圖及第2圖,連結至壓印頭18者為一具有圖案 • 化模具26於其上之模版24。圖案化模具26包括由多個彼此 H)隔開之凹部28與凸部30所界定之多個結構。凸部%具有寬 度1,凹口P28具有見度%,二者皆係於橫至冗轴之方向測 定。多個結構界定-原先圖案,該原先圖案形成欲轉印至 置於移動平台20上之基材32上之圖案的基礎。為了達成該 項目的’壓印頭18適合沿z軸移動,且變更圖案化模具% 15與基材32間之距离隹「u夕卜,或與壓印頭18結合,移動 平台20可沿Z軸移動模版24。藉此方式,於圖案化模具% • 上之特徵結構可被壓印至基材32之流動性區,容後詳述。 輻射源22係設置成圖案化模具26係位於輻射源22與基材32 間’輕射源22所產生之光化輻射係經由圖案化模具26而傳 2〇播。結果,希望圖案化模具26係由一種對光化輻射實質上 為透明之材料製成。可製造圖案化模具26之材料實例包括 融合矽氧、石英 '矽、有機聚合物、矽氧烷聚合物、硼矽 破璃、氟碳聚合物、金屬及前述之組合,該等材料係依據 採用之光化輻射決定。可用之一種系統實例可以商品名英 9 1291204 普力歐(IMPRIO) 100得自分子壓印公司(M〇iectQar ImpHnts,The print head 18 is a mobile platform 2〇. The mobile platform _ is configured to move relative to the platform support 16 along the X and Y axes and also provides movement along the ice. A light source 22 is coupled to the system 1A to emit an actinic light onto the mobile platform 2A. As shown, the source 22 is coupled to the bridge 14 and includes a power generator 23 coupled to the radiation source 22. Referring to Figures 1 and 2, the stencil 24 having the patterning mold 26 attached thereto is attached to the embossing head 18. The patterned mold 26 includes a plurality of structures defined by a plurality of recesses 28 and projections 30 spaced apart from one another. The convex portion % has a width of 1, and the notch P28 has a visibility %, both of which are measured in a direction transverse to the redundant axis. The plurality of structures define an original pattern that forms the basis for the pattern to be transferred to the substrate 32 placed on the moving platform 20. In order to achieve the project, the imprint head 18 is adapted to move along the z-axis, and the distance between the patterned mold % 15 and the substrate 32 is changed, or combined with the imprint head 18, the mobile platform 20 can be along the Z The shaft moves the stencil 24. In this way, the features on the patterned mold % can be embossed to the fluidity region of the substrate 32, as detailed later. The radiation source 22 is arranged such that the patterned mold 26 is located in the radiation The actinic radiation generated by the light source 22 between the source 22 and the substrate 32 is transmitted via the patterned mold 26. As a result, it is desirable that the patterned mold 26 be made of a material that is substantially transparent to actinic radiation. Examples of materials from which the patterned mold 26 can be fabricated include fused oxygen, quartz enthalpy, organic polymer, siloxane polymer, borosilicate glass, fluorocarbon polymer, metal, and combinations thereof. It is determined by the actinic radiation used. A system example available is available from Ml.

Inc·)營業地址 1807-C Braker Lane,Suite 1〇〇, Austin,Texas 78758)。英普力歐100之系統說明可得自 www.molecularimprints; rnm 〇 5Inc.) Business address 1807-C Braker Lane, Suite 1〇〇, Austin, Texas 78758). The system description of Inplio 100 is available from www.molecularimprints; rnm 〇 5

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參,¾弟2圖,流動性區諸如壓印層34形成於表面%之一 部分上,該表面36之一部分表示即使並非平坦,但為實質 上光滑之面對模版24之表面側繪圖。於本發明之一具體例 中,流動區係沉積成多個彼此隔開之壓印材料分開小滴% 於基材32上,容後料。壓特料可轉性經聚合及交聯 來記錄原先圖案之顛倒圖案’界記錄圖案。圖案化模 具26上之多個特徵結構顯示為沿凸部3〇之平行方向延伸之 凹部烈,其對®案化模具%讀面提供城堡之城牆形狀。 仁凹獅及凸部3G可與實質上任—種形成積體電路所需之 特徵結構相對應,且可小至_奈米之十分之幾。 ^茶照第2圖及第3圖,經由與圖案化模具%機械接觸而 部分製造-壓印層34記錄之圖案。為了達成該項目的,縮 】距離d」,允許壓印層34與圖案化模具%機械接觸,展 ^滴38,因而形成具有連續形成壓印材料於表面%上之 壓印層34。-具體射,距離「d」縮小來允許壓印層从之 小部分46進入凹部28且填補凹部28。 「本具體例中,於已經達成預定距離且通常為最小座離 L後,壓印層34之小部分48維持重疊凸部3〇,留下 Γ厂6具有厚私,及小部分48具有厚紅。厚度t爾為殘 餘厚度。依據應用用途而定,厚度「t]」A「t2」可為任一 20 1291204 種期望厚度。小滴38所含之總體積因而可最小化,或避免 定量壓印材料延伸超出表面36之重疊圖案化模具26該區, 同時獲得期望厚度⑷2,換言之經由使用圖案化模具%及 表面36對壓印材料之毛細吸引力以及壓印材料之表面黏著 5 性來達成期望厚度。 參照第2圖,於已經達到預定距離rd」後,輻射源^ 產生光化輻射,光化輻射聚合且膠聯壓印材料,形成固化 之壓印層134。壓印層34之組成由流體壓印材料轉成固化材 • 料。如此提供固化之壓印層134有一邊之形狀係吻合圖案化 10模具26之表面50之形狀,更清晰顯示於第5圖。結果,固化 之壓印層134成形有凹部52及凸部54。於形成固化之壓印層 134後,距離「d」加大,故圖案化模具加與固化之壓印層 134隔開。典型地,此種程序重複數次,來對基材32之不同 區形成圖案(圖中未顯示),稱作為一種步進與重複程序。步 15進與重複程序之一實例揭示於已公告之美國專利申請案第 2004/0008334號,申請日2002年7月11日,申請案號 _ 1〇/194,414,名稱「步進與重複壓印光刻術」,該案係讓與 本案之相同受讓人。 此種形成圖案之方法之優點有多項,舉例言之,凸部 2〇 54與凹部52間之厚度差異有助於於基材32形成與固化之壓 印層134之圖案相對應之圖案。特別,凸部54與凹部52間之 厚度差異,亦即^與。間之差異,結果導致比較重疊凹部52 之基材32區暴露所需時間,暴露與凸部%重疊之基材以區 所需餘刻時間較長。因此對一指定_程序而言,比較重 11 l29l2〇4 ®凸部54之基材32區,須較早開始蝕刻重疊凹部52之基材 32區。如此有助於形成基材32之圖案係與固化之壓印層134 之圖案相對應。經由適當選擇壓印材料及蝕刻化學,最終 轉印至基材32之圖案之不同特徵結構間之相關維度可控制 成如所期望之相關維度。為了達成該項目的,希望對一指 定餘刻化學而言,固化之壓印層134之姓刻特性實質為均 勻0 、纟。果鑑於所採用之獨特圖案化程序,壓印材料之特性 10 15 20 2基材32有效形成圖案而言相#重要。如前述,壓印㈣ 積於基材32上王多個離散且彼此隔開之小滴%。小滴% 之組合體積為壓印㈣適當分佈於表㈣之欲形成壓印層 34之-區上。藉此方式,小滴%之壓印材料總體積界定欲 獲仔之距離d」,讓-旦達到期望距離%時,圖案化模 ”基材32之重豐圖案化模具%部分間所界定之間隙 由[P材料所占有的總體積係等於小滴%之壓印材料 總體積。結果,壓印層34展 蕤美m t 展開且叫製作圖案,圖案隨後 :ΰ η胃射固化。為了輔助沉積程序,希望壓印材 供小滴38内部之壓印材料快速且均勻展開於表㈣ =部厚度'實質為均句,全部殘餘厚紅實質為均句。 堡印材料之組成物實例係由下列成分組成: 丙烯酸異冰片酿 丙稀酸氧基曱基武(三甲基石夕氧基)甲基魏 —丙烯酸乙二醇酯 玲基-2-甲基小笨基_丙小酮 12 25 1291204 組成物2 丙稀酸異冰片酯 丙烯醯氧基甲基參(三甲基矽氧基)矽烷 二丙烯酸乙二醇酯 2-羥基-2-曱基-1-苯基-丙-1-酮 組成物3 丙烯酸異冰片酯Referring to Fig. 2, a fluidity region such as embossed layer 34 is formed on one of the surface %, and a portion of the surface 36 indicates a surface side of the surface of the stencil 24 which is substantially smooth even if it is not flat. In one embodiment of the invention, the flow zone is deposited as a plurality of embossed materials spaced apart from each other to separate droplets from the substrate 32 for subsequent processing. The specific material transferability is polymerized and crosslinked to record the reverse pattern of the original pattern. The plurality of features on the patterned mold 26 are shown as recesses extending in the parallel direction of the projections 3, which provide the wall shape of the castle for the % mold face. The Renshi lion and the convex portion 3G can correspond to substantially any characteristic structure required for forming an integrated circuit, and can be as small as a few tenths of a nanometer. ^Tea Photo 2 and 3, the pattern recorded by the embossed layer 34 is partially produced via mechanical contact with the patterned mold. In order to achieve this, the distance d" allows the embossing layer 34 to be in mechanical contact with the patterned mold, thereby expanding the embossing layer 34 having a continuous formation of the embossed material on the surface %. - The specific shot, the distance "d" is reduced to allow the embossing layer to enter the recess 28 from the small portion 46 and fill the recess 28. "In this embodiment, the small portion 48 of the embossed layer 34 maintains the overlapping projections 3 after the predetermined distance has been reached and is typically the minimum seating distance L, leaving the enamel factory 6 to be thick and private, and the small portion 48 to be thick. Red. The thickness t is the residual thickness. Depending on the application, the thickness "t]"A"t2" can be any desired thickness of 20 1291204. The total volume contained in the droplets 38 can thus be minimized, or the quantitative imprinting material can be prevented from extending beyond the area of the overlapping patterned mold 26 of the surface 36 while achieving the desired thickness (4) 2, in other words via the use of the patterned mold % and surface 36. The capillary attraction of the printed material and the surface adhesion of the imprinted material are achieved to achieve the desired thickness. Referring to Fig. 2, after the predetermined distance rd has been reached, the radiation source generates actinic radiation, and the actinic radiation polymerizes and bonds the embossed material to form a cured imprint layer 134. The composition of the embossed layer 34 is converted from a fluid embossed material into a solidified material. The embossed layer 134 thus provided has a shape on one side that conforms to the shape of the surface 50 of the patterning mold 10, and is more clearly shown in Fig. 5. As a result, the cured imprint layer 134 is formed with the concave portion 52 and the convex portion 54. After the cured imprinting layer 134 is formed, the distance "d" is increased, so that the patterned mold is separated from the cured imprinting layer 134. Typically, such a procedure is repeated several times to pattern different regions of the substrate 32 (not shown), referred to as a step and repeat procedure. An example of a step-and-repeat embossing is disclosed in the published U.S. Patent Application Serial No. 2004/0008334, filed on Jul. 11, 2002, filed on s. Lithography, the case gives the same assignee as the case. There are a number of advantages to this method of patterning. For example, the difference in thickness between the projections 2 〇 54 and the recesses 52 helps the substrate 32 to form a pattern corresponding to the pattern of the cured embossed layer 134. In particular, the difference in thickness between the convex portion 54 and the concave portion 52 is also the same. The difference between the results results in a comparison of the time required for the substrate 32 region of the overlapping recess 52 to be exposed, and the exposure of the substrate overlapping the convex portion to the region takes a longer time. Therefore, for a given_program, the area of the substrate 32 of the convex portion 54 is relatively heavy, and the substrate 32 region of the overlapping recess 52 must be etched earlier. The pattern of the substrate 32 thus formed corresponds to the pattern of the cured imprint layer 134. By appropriate selection of the imprint material and etching chemistry, the relevant dimensions between the different features of the pattern ultimately transferred to the substrate 32 can be controlled to the desired dimensions as desired. In order to achieve this project, it is desirable that for a given residual chemistry, the surname characteristics of the cured imprint layer 134 are substantially uniform 0, 纟. In view of the unique patterning procedure employed, the characteristics of the imprinted material are important. As previously described, the embossing (4) accumulates on the substrate 32 a plurality of discrete and spaced apart droplets. The combined volume of droplet % is embossed (4) and is suitably distributed on the region of the embossed layer 34 to be formed in Table (4). In this way, the total volume of the embossed material of the droplet % defines the distance d" to be obtained, and when the desired distance % is reached, the patterned mold" is defined by the portion of the heavily patterned mold of the substrate 32. The gap is determined by the total volume occupied by the [P material is equal to the total volume of the embossed material of the droplet %. As a result, the embossed layer 34 is unfolded and called a pattern, and the pattern is subsequently: ΰ η gastric radiation cured. Procedure, it is hoped that the imprinting material for the embossing material inside the droplet 38 is quickly and evenly spread on the table (4) = part thickness 'substantially uniform sentence, all residual thick red is substantially uniform. The example of the composition of the forged printing material is composed of the following ingredients Composition: Acrylic isobornyl acrylate acetoxy oxycarbazide (trimethyl sulphate) methyl wei-ethylene glycol acrylate base-2-methyl small stupyl _ propyl ketone 12 25 1291204 composition 2 Isobornyl acrylate propylene methoxymethyl ginseng (trimethyl decyloxy) decane ethylene glycol dicarboxylate 2-hydroxy-2-mercapto-1-phenyl-propan-1-one composition 3 Isobornyl acrylate

3_丙烯醯氧基丙基貳(三曱基矽氧基)甲基矽烷 二丙烯酸乙二醇酯 2-羥基-2-甲基-1-苯基-丙-1-酮 組成物4 丙烯酸異冰片酯 15 3-丙烯醯氧基丙基參(三甲基矽氧基)矽烷 二丙烯酸乙二醇酯 2-羥基-2-甲基-1-苯基-丙-1-酮 組成物5 丙烯酸異冰片酯 20 丙烯醯氧基甲基貳(三曱基矽氧基)曱基矽烷 二丙烯酸乙二醇酯 2 -技基-2 -甲基-1 -本基-丙-1 -酉同 R1R2 組成物6 丙稀酸異冰片酯 丙烯醯氧基曱基參(三甲基矽氧基)矽烷 二丙烯酸乙二醇酯 2-羥基-2-曱基-1-苯基-丙-1-酮 R】R2 13 25 1291204 丙烯酸異冰片酉旨 3-丙烯醯氧基丙基貳(二甲基矽氧基)甲基矽烷 二丙烯酸乙二醇g旨 5 2-經基-2-甲基-1-笨基-丙-1一嗣3_Acryloxypropyl hydrazide (tridecyloxy)methyl decane ethylene glycol diacrylate 2-hydroxy-2-methyl-1-phenyl-propan-1-one composition 4 acrylate Borne ester 15 3-propenyloxypropyl ginseng (trimethyl decyloxy) decane ethylene glycol dicarboxylate 2-hydroxy-2-methyl-1-phenyl-propan-1-one composition 5 acrylic acid Isobornyl ester 20 propylene methoxymethyl hydrazide (tridecyl decyloxy) decyl decane ethylene glycol diacrylate 2 - Technic-2 -Methyl-1 -benyl-propan-1 -酉R1R2 Composition 6 Isobornyl acrylate propylene oxime oxime (trimethyl decyloxy) decane ethylene glycol dicarboxylate 2-hydroxy-2-mercapto-1-phenyl-propan-1-one R] R2 13 25 1291204 Isobornyl acrylate - 3-propenyloxypropyl hydrazine (dimethyl methoxy) methyl decane diethylene glycol glycol g 5 2- mercapto-2-methyl-1 - Stupid base - C-1

RiR2 丙烯酸異冰片酯 3-丙烯醯氧基丙基參(三甲基矽氧基)矽烷 φ 1〇 二丙烯酸乙二醇酯 2-經基-2-甲基-1-笨基-丙-1-酮RiR2 isobornyl acrylate 3-propenyloxypropyl ginseng (trimethyl decyloxy) decane φ 1 乙二醇 ethylene glycol diacrylate 2-yl-2-methyl-1-phenyl-propan-1 -ketone

RiR2 組成物1、2、3及4中,第一種不含矽之丙烯酸酯亦即 丙:^酸異冰片g旨係占組成物之約42%,但其存在量可於 15 20-60%之範圍。含矽丙烯酸酯係占組成物1、2、3及4之約 37%,但其存在量可於30-50%之範圍。第二種不含石夕之丙 烯酸酯亦即交聯劑二丙烯酸乙二醇酯係占組成物1、2、3及 φ 4之約18%,但其存在量係於10-40%之範圍。引發劑亦即2- 輕基-2-甲基-1-苯基-丙小酮係占〇·5%至5%,引發劑可回應 20 於紫外光輻射來辅助組成物1-4之交聯與聚合。若有改良離 型特性,除了組成物1-4之成分之外,組成物5、6、7及8各 自包括界面活性劑RiR2,含量占組成物之約0.5%。組成物 5、6、7及8之其餘各種成分之含量成比例地降低來補償界 面活性劑的添加。用於本發明之目的,,界面活性劑定義 25 為任一種一個尾端為疏水性之分子。界面活性劑可含氣, 例如包括氟鏈;或界面活性劑之分子結構可不含任何氣。 14 1291204 界面活性劑之一例可以商品名鐘尼爾(ZONYL) FSO-100得自杜邦公司,具有通式結構式R!R2,此處 R1=:F(CF2CF2),此處 y 為 1 至 7(含)及 R2=CH2CH20(CH2CH2〇)xH,此處X為0至 15(含)。但須瞭解 5 其它界面活性劑也可含括於組成物5、6、7及8來替代 F(CF2CF2)yCH2CH20(CH2CH20)xH界面活性劑或額外含有 其它界面活性劑。額外界面活性劑可包括以商品名氟拉德 (FLUORAD) FC4432及/或氟拉德FC4430得自3M公司之氟 ϋ 化聚合物界面活性劑。此外,其它紫外光光引發劑可用來 10 結合或替代2-經基-2-甲基-1-苯基-丙-1-酮。須瞭解非光引 發劑也可使用,諸如熱引發劑。結果,採用來輔助交聯與 聚合之光化輕射本質上須為熱,例如紅外光輕射。 參知、弟4圖,一種形成固化之壓印層134之方法實例包 括沉積呈圖案100之小滴來減少當壓印材料展開於表面36 15上時的夾帶氣體。為了達成該項目的,圖案100係由多個小 滴101-149循序沉積所形成,其號碼順序為小滴1〇1最先配 • 送,而小滴149最後配送。但發現固化之壓印層134之蝕刻 特性係依液滴配送順序中之小滴位置之函數變化而改變, 稱作為循序蝕刻差異(SED)。 2〇 判疋SED係歸因於形成固化之壓印層134之交聯與聚 合成分於固化之壓印層134該區上之變化。於固化之ϋ 134之成分變化係出現於騎材料呈流化㈣塞鑛所^ 之變化。特別,發現壓印材料之組成係於壓印材料聚合盘 交聯之前改變。於麼印程序中,於數段間隔期間可能出現 15 1291204 洛鍵。配送小滴101至圖案勘接觸模具26間之-段時間約 為2〇移。相信為出現最大蒸錢之一段時間。於此期間,出 現屡印材料蒸鍍,麼印材料的損耗係與麼印材料沉積至接 斤二八㈤之日卞間間隔長度成正比。接觸模具26後,需要 5 =二段_間隔來展開小細M49,及於基材32上形成連 、貝3矽層。於此第二時間間隔期間,典型約為卿,出現 壓印材料的額外蒸鍍。 經由確保特定可聚合成分以預定量存在於固化之壓印 _ ㉟134本發明克服SED。本例中,期望之可聚合成分為含 1〇石夕丙烯酸S旨成分及含有非%/不切之丙雜喊分,其包 括IBOA及交聯劑成分EDGA,全部皆為丙烯酸酯類。特別 須瞭解固化之壓印層134之姓刻特性之非均勻度係由於該 區之石夕含量變化所致。 先前技術之含矽組成物,其中含矽丙烯酸酯蒸鍍比組 15成物之其餘各成分更快速,發現會造成蝕刻不均問題。由 苐5圖及弟6圖可知。第5圖中,由前述先前技術之含石夕組成 儀| 物所形成之含石夕層150之表面地形顯然為實質光滑且均 勻。於含矽層150接受電漿蝕刻程序後,經由無數凹陷區152 出現於蝕刻層154,可觀察得非均勻。此點係來自於凹陷區 20 152之相關蝕刻速率比凸起區156之蝕刻速率更快之故。相 信凹陷區152之較快速蝕刻速率係來自於其中之矽存在量 係比較凸起區156之石夕含量更低之故。含石夕層150之;ε夕含量 不均,結果導致蝕刻層152之蝕刻不均,此乃非期望的現象。 本發明可減輕(即使無法避免)含矽層之蝕刻不均勻現 16 1291204 象,本發明經由組配壓印材料組成物,其中期望成分於一 段預定時間間隔具有預定蒸錢速率而減輕姓刻不均。雖然 可提供一種組成物,其中預定成分之蒸鍍速率實質上於一 段有限期間皆相等,但判定如此為不需要。反而,組成物 5 1-8之可聚合成分經選定具有於沉積與暴露於光化輻射間 之時間間隔具有預定之相對蒸鍵速率。基於各成分亦即組 成物1-4之其餘成分亦即光引發劑2-羥基-2-甲基苯基一丙 -1-酮不被視為可聚合成分,但可變成聚合結構之一部分。 因此光引發劑2-羥基-2-甲基-1-苯基-丙-1-酮實質上不會促 10 成所得壓印層之特徵結構,如此減少蒸鍍速率匹配丙稀酸 酯成分之蒸鍍速率的需求。同樣地,組成物5-8之其餘成分 亦即光引發劑2-經基-2-甲基-1 -苯基-丙-1 -_及界面活性劑 RfCH2CH2〇(CH2CH2〇)xH不被視為可聚合成分。此外,希 望組成物1 -8之非可聚合成分係以比丙烯酸醋成分之蒸鍍 15 速率更慢之速率蒸錢。 參照第7圖,顯示各曲線驗證於400微微升組成物丨小滴 之規定成分之相對蒸鍍速率,規定成分如後:二丙烯酸乙 二醇酯(EDGA)、丙烯醯氧基甲基貳(三甲基矽氧基)曱基石夕 烷(AMBMS)、及丙烯酸異冰片酯(IBOA)。400微微升小滴 20 係經由將各別體積80微微升之多個小滴沉積於一共通區 上,來提供具有直徑約82微米之400微微升小滴獲得。組成 物1各成分間之相對蒸鍍速率顯示為小於0.1%/秒,換算成 經歷20秒間隔時間小於2%,經歷60秒間隔時間約為5%。也 發現組成物2、8之可聚合成分具有類似之蒸鍍速率。結果, 17 1291204 組成物μ各自具有期望特性,其可聚合成分具有實 之蒸鍵速率’可於第3圖所w冰卩和*體積上提 供實質均勻之抑度。特別,固化之壓印層134係以於 之壓印層134之指定區上具有獅含量不低纖重量比 而提供。於固化之騎層134之任三間域^含量重田 大變化須不大於5%。 | ^Among the RiR2 compositions 1, 2, 3 and 4, the first yttrium-free acrylate, ie, C:isosorbate g, is about 42% of the composition, but it can be present in 15 20-60 The range of %. The ruthenium containing acrylates comprise about 37% of the compositions 1, 2, 3 and 4, but may be present in an amount ranging from 30 to 50%. The second non-stone acrylate, ie, the cross-linking agent, ethylene glycol diacrylate accounts for about 18% of the compositions 1, 2, 3 and φ 4 , but the amount is in the range of 10-40%. . The initiator, 2-chromo-2-methyl-1-phenyl-propanone, is 5% to 5%, and the initiator can respond to 20 UV radiation to aid the composition of the composition 1-4. Union and aggregation. If modified release characteristics are present, in addition to the components of Compositions 1-4, Compositions 5, 6, 7, and 8 each comprise a surfactant, RiR2, in an amount of about 0.5% of the composition. The content of the remaining components of compositions 5, 6, 7 and 8 is proportionally reduced to compensate for the addition of the surfactant. For the purposes of the present invention, the surfactant definition 25 is any molecule having a hydrophobic end. The surfactant may contain gas, for example including a fluorine chain; or the molecular structure of the surfactant may be free of any gas. 14 1291204 An example of a surfactant can be obtained from DuPont under the trade name ZONYL FSO-100, having the general structural formula R!R2, where R1=:F(CF2CF2), where y is 1 to 7 (inclusive) and R2=CH2CH20(CH2CH2〇)xH, where X is from 0 to 15 (inclusive). However, it should be understood that 5 other surfactants may also be included in compositions 5, 6, 7 and 8 in place of F(CF2CF2)yCH2CH20(CH2CH20)xH surfactant or additionally with other surfactants. Additional surfactants may include fluorochemical polymer surfactants available from 3M Company under the tradename FLUORAD FC4432 and/or Florad FC4430. In addition, other ultraviolet photoinitiators can be used to bind or replace 2-yl-2-methyl-1-phenyl-propan-1-one. It is to be understood that non-photoinitiators can also be used, such as thermal initiators. As a result, actinic light shots used to aid cross-linking and polymerization must essentially be hot, such as infrared light. An example of a method of forming a cured imprinting layer 134 includes depositing droplets in pattern 100 to reduce entrained gas as the imprinting material unfolds on surface 3615. In order to achieve this project, the pattern 100 is formed by sequential deposition of a plurality of droplets 101-149 in the order of droplets 1〇1 being first dispensed and droplets 149 being finally dispensed. However, it has been found that the etch characteristics of the cured embossed layer 134 vary as a function of the position of the droplets in the droplet delivery sequence, referred to as a sequential etch difference (SED). 2〇 The SED is judged to be due to the change in the cross-linking and the formation of the cured imprint layer 134 on the region of the cured imprint layer 134. The compositional change of 134 after curing occurs in the fluidized (four) plugging of the riding material. In particular, it has been found that the composition of the embossed material is changed prior to cross-linking of the embossed material polymeric disk. In the printer program, the 15 1291204 key may appear during several intervals. The time between the delivery of the droplet 101 to the patterning contact mold 26 is about 2 shifts. I believe that for the time when the biggest steaming money appears. During this period, the evaporation of the printed material appeared, and the loss of the printed material was proportional to the length of the interval between the deposition of the printed material and the day after the 28th (five). After contacting the mold 26, it is necessary to form a small fine M49 by 5 = two stages _ spacing, and form a continuous layer of bismuth and bismuth on the substrate 32. During this second time interval, typically about qing, additional evaporation of the embossed material occurs. The present invention overcomes the SED by ensuring that a particular polymerizable component is present in a predetermined amount on the cured stamp. In this example, the desired polymerizable component is a composition containing a fluorene-based acrylic acid S-containing component and a non-%/uninterrupted acryl-containing component, which includes IBOA and a crosslinking agent component EDGA, all of which are acrylates. It is particularly important to understand that the non-uniformity of the surname characteristics of the cured embossed layer 134 is due to the change in the content of the slate. The prior art ruthenium-containing composition in which ruthenium-containing acrylate vapor deposition is faster than the remaining components of the group of 15 components, and is found to cause etching unevenness. It can be seen from Figure 5 and Figure 6. In Fig. 5, the surface topography of the tarpaulin-containing layer 150 formed by the above-described prior art smectite composition is apparently substantially smooth and uniform. After receiving the plasma etching process on the germanium containing layer 150, it appears on the etching layer 154 via the innumerable recessed regions 152, which is non-uniform. This is due to the fact that the associated etch rate from recessed regions 20 152 is faster than the etch rate of raised regions 156. The faster etch rate of the associated recessed regions 152 is derived from the fact that the amount of germanium present is lower than that of the raised regions 156. The inclusion of the lithium layer 150; the ε 含量 content is uneven, resulting in uneven etching of the etch layer 152, which is an undesirable phenomenon. The present invention alleviates (even if unavoidable) the etching unevenness of the ruthenium containing layer. The present invention combines the embossed material composition, wherein the desired component has a predetermined steaming rate at a predetermined time interval to alleviate the surname. All. Although it is possible to provide a composition in which the evaporation rate of the predetermined component is substantially equal for a limited period of time, the judgment is not required. Instead, the polymerizable component of composition 5 1-8 is selected to have a predetermined relative steaming rate at a time interval between deposition and exposure to actinic radiation. The remaining component, i.e., the photoinitiator 2-hydroxy-2-methylphenyl-propan-1-one, based on the respective components, i.e., the composition 1-4, is not considered to be a polymerizable component, but may become a part of the polymer structure. Therefore, the photoinitiator 2-hydroxy-2-methyl-1-phenyl-propan-1-one does not substantially promote the characteristic structure of the resulting imprint layer, thus reducing the evaporation rate to match the acrylate component. The need for evaporation rate. Similarly, the remaining components of the composition 5-8, that is, the photoinitiator 2-yl-2-methyl-1-phenyl-propan-1 - and the surfactant RfCH2CH2 〇 (CH2CH2 〇) xH are not regarded. It is a polymerizable component. Further, it is desirable that the non-polymerizable component of the composition 1-8 be steamed at a slower rate than the evaporation of the acrylic vinegar component. Referring to Figure 7, each curve is shown to verify the relative vaporization rate of the specified components of the 400 microliter liters of the composition, such as the following: ethylene glycol diacrylate (EDGA), propylene methoxymethyl hydrazine ( Trimethyl decyloxy) fluorenyl oxalate (AMBMS), and isobornyl acrylate (IBOA). The 400 picoliter droplets 20 were obtained by depositing 400 microliter droplets having a diameter of about 82 microns by depositing a plurality of droplets of 80 microliters each in a common volume on a common zone. The relative vaporization rate between the components of Composition 1 was shown to be less than 0.1%/second, converted to less than 2% over a 20 second interval, and about 60% over a 60 second interval. The polymerizable components of Compositions 2 and 8 were also found to have similar evaporation rates. As a result, 17 1291204 compositions μ each have a desired characteristic, and the polymerizable component has a solid vapor bond rate' which provides a substantially uniform degree of inhibition on the hail and * volume of Fig. 3. In particular, the cured embossed layer 134 is provided with a lion content not low fiber weight ratio on a designated area of the embossed layer 134. The three-zone content of the solidified riding layer 134 must be no more than 5%. | ^

㈣預疋黏度㈣度係於1至20厘 泊(⑽tipoises)之範圍,以低於5厘泊為佳。如此輔助採用小 滴配送技術來沉積。此外,組成物Μ對固化之壓印層134 提供預定频,讓_應力敍料等於15咖曰。 15(4) The pre-adhesive viscosity (four) degree is in the range of 1 to 20 centipoise ((10) tipoises), preferably less than 5 centipoise. This assists in the deposition using droplet dispensing techniques. In addition, the composition 提供 provides a predetermined frequency to the cured imprint 134 such that the _stress is equal to 15 curries. 15

20 參照第2圖及第8圖,希望對基材32提供光滑面(即使並 非平坦面),於該表面上來形成壓印層34。為了達項目 的,基材32可包括-底塗層96。當基收之表面%比較欲 形成於壓印層34之特徵結狀雜誠更轉時,證實底 塗層96為有利。底塗層%也可用來提供與壓印料之標準 界面’如此減少須對形成基材32之壓印材料之各項處理程 序依據客戶需求量身訂製的m外,底塗㈣可由具 有與壓印層34相同或相異之#刻特性之有機壓印材料製 成。結果’底塗層%係製造成具有連續光滑㈣無瑕疫之 表面’該表面對壓印層34具有絕佳黏著性1來形成底塗 層96之-材料實例可以商品名Duv遍_6得自密蘇里州羅 市之布爾科學公司(Brewer Science, Inc.)。底塗層96典型 之提供厚度為該厚度可獅提供預定之表面騎,而不會 •寸用來h測基材32表自之圖案(諸如校準記號)之光學感測 18 !2912〇4 設備為不透明。 參照第8圖及第9圖,發現當壓印層34係存在於先前已 經經過製作圖案之基材32表面136上時,沉積底塗層為 較佳。為了達成該項目的,底塗層196如同底塗層%可採用 任一種已知之沉積方法沉積,包括小滴配送技術、旋塗技 術等。此外,為了提升底塗層96及196任一者之表面光、、骨 度’希望讓底塗層接觸具有實質光滑(即使並非平坦)接觸面 之平坦化模具80。20 Referring to Figures 2 and 8, it is desirable to provide a smooth surface (even if it is not a flat surface) to the substrate 32 on which the embossed layer 34 is formed. In order to achieve the item, the substrate 32 can include an undercoat layer 96. The undercoat layer 96 is confirmed to be advantageous when the surface % of the base is compared with the characteristic knot formed by the embossed layer 34. The base coat % can also be used to provide a standard interface with the imprinted material. [This reduction requires that the various processing procedures for the imprint material forming the substrate 32 be tailored to the customer's needs. The primer (4) can have The embossed layer 34 is made of the same or different organic imprinting material. The result '% of the base coat is made to have a continuous smooth (four) plague-free surface' which has excellent adhesion to the embossed layer 1 to form the undercoat layer 96 - a material example can be obtained from the trade name Duv _6 Brewer Science, Inc., of Rhode Island, Missouri. The undercoat layer 96 typically provides a thickness for which the lion can provide a predetermined surface ride, and does not use the optical sensing of the substrate 32 to be self-patterned (such as a calibration mark) 18 ! 2912 〇 4 device It is opaque. Referring to Figures 8 and 9, it is found that when the embossed layer 34 is present on the surface 136 of the previously patterned substrate 32, it is preferred to deposit the undercoat layer. To achieve this, the undercoat layer 196 can be deposited as any of the underlying coatings by any of the known deposition methods, including droplet dispensing techniques, spin coating techniques, and the like. In addition, in order to enhance the surface light, boneness of either of the undercoat layers 96 and 196, it is desirable to have the undercoat layer contact the planarizing mold 80 having a substantially smooth (even if not flat) contact surface.

1515

20 為了減少固化後之底塗層96及196黏著至平坦化模具 80之機率’平坦化模獅可使用低表面能塗層98處理。、低 表面能塗層98可使用任—種已知方法施用。例如處理技術 包括化學氣相沉積方法、物理氣相沉積方法、原子層沉積 法、或多種其它技術、鑛銅法等。以類似方式,低:面能 塗層(圖中未顯不)可施用至模具26,如第2圖所示。 除了前述界面活性劑及低表面能塗層外,敗化添加劑 可用來改良壓印材料之離麵。氟化添加_似界面活性 劑具有相關表面能係、低於壓印材料之表面能。採用前魏 化添加劑之i财法係由班料人討論於「於基於紫外 光之奈米壓印光刻術之多重壓印:相關材料議題」,微電子 工程61-62頁(2〇辦)。添加社低表面訪提供預定離型 性質,來減少交聯後及聚合後壓印材料模具26謂之點 者。須瞭解界面活性劑可結合或替代包括界面活性劑之組 成物8個純弟5圖及第1〇圖,須瞭解經由本發明提 供之效果也同等適祕採料它技術其中於層形成過程中 19 1291204 出現蒸鍍之技術之各層。可用來形成固化層134之範例蒸鍍 技術包括旋塗技術、雷射輔助直接壓印仏八]31)技術等。 LADI技術之實例由Chou等人揭示於「矽中奈米結構之超快 速直接壓印」,自然417欄,835-837頁,2002年6月。例如, 5經由採用旋塗技術,組成物卜8中之任一者皆可沉積於基材 32上作為層234。隨後層234可藉採用模具26來製作圖案。 當層234係採用步進與重複技術來製作圖案時,本發明之效 果變顯著,於該步進與重複技術期間,層234之不同區須被 循序製作圖案且隨後固化。 10 前述本發明之具體例僅供舉例說明之用。可對前文揭 不作出多項變化及修改,但仍然屬於本發明之範圍。例如 前述組成物各別之成分比可改變。此外,雖然已經就控制 —層之妙含量來改良_均勻度而討論本發明,但本發明 也同等適用於改良-層之其它特性,例如黏著性(無論是否 5 2好)、應力、厚度均勻度、粗度、強度、密度等。因此本 發明之範圍並非受前文說明所限,反而須參照隨附之申請 專利範圍連同其完整相當範圍測定。 【圖式簡單説明】 第1圖為根據本發明之一種光刻術系統之透視圖; 0 第2圖為根據本發明之一具體例,採用來形成圖案化壓 P層之如第1圖所示之〆種光刻術系統之簡化仰視圖; 第3圖為根據本發明經形成圖案後,於第丨圖所示之圖 水化壓印層分開之一種壓印裝置之簡化仰視圖; 第4圖為第2圖所示之基材之_區,於該區採用可聚合 20 1291204 流體小滴圖案沉積於其上進行圖案化之俯視圖; 第5圖為由先前技術之可聚合壓印材料沉積於一基材 上所形成之一層之剖面圖; 第6圖為根據先前技術,第5圖所示該層接受RIE蝕刻程 5 序後之剖面圖; 第7圖為線圖,顯示根據本發明,含矽可聚合之壓印材 料中之不同成分之蒸鍍速率; 第8圖為剖面圖,顯示根據本發明可採用之一離型層及 一底塗層; 10 第9圖為剖面圖,顯示施用於第8圖所示之一平坦化模 具之凸紋層;以及 第10圖為剖面圖,顯示根據本發明之另一具體例,形 成一層於一基材上。 【主要元件符號說明】 10...光刻術糸統 26...圖案化模具 12…橋支承件 28…凹部 14…橋 30...凸部 16·.·平台支承件 32…基材 18···壓印頭 34···壓印層 20...移動平台 36…表面 22...輻射源 38…小滴 23…電源產生為 46…小部 24…模版 48…小部 21 1291204 50...表面 134...固化之壓印層 52…凹部 136...表面 54··凸部 150…含石夕層 80…平坦化模具 152...凹陷區 96...底塗層 154...蝕刻層 98…低表面能塗層 156...凸起區 100...圖案 196...底塗層 101-149...小滴 234…層 2220 To reduce the chance of the undercoats 96 and 196 adhering to the flattening mold 80 after curing, the flattened lion can be treated with a low surface energy coating 98. The low surface energy coating 98 can be applied using any of the known methods. For example, processing techniques include chemical vapor deposition methods, physical vapor deposition methods, atomic layer deposition methods, or various other techniques, ore methods, and the like. In a similar manner, a low: surface energy coating (not shown) can be applied to the mold 26, as shown in Figure 2. In addition to the aforementioned surfactants and low surface energy coatings, the defeating additive can be used to improve the exit of the imprinted material. Fluorinated addition-like surfactants have associated surface energy systems that are lower than the surface energy of the imprinted material. The i-Finance Method of Pre-Wei Chemical Additives was discussed by the class in "Multi-imprinting of Ultraviolet-based Nanoimprint Lithography: Related Materials Issues", Microelectronics Engineering, 61-62 (2) ). Adding a low surface visit provides a predetermined release property to reduce the embossed material mold 26 after cross-linking and post-polymerization. It should be understood that the surfactant can be combined with or substituted for the composition of the surfactant comprising 8 pure 5 and the first schematic. It should be understood that the effect provided by the present invention is equally suitable for the technique. 19 1291204 The layers of the evaporation technology appear. Exemplary evaporation techniques that can be used to form the cured layer 134 include spin coating techniques, laser assisted direct imprinting, and the like. An example of LADI technology is disclosed by Chou et al. in "Ultra-Fast Direct Imprinting of the Nanostructure of Suizhong", Natural 417, 835-837, June 2002. For example, 5 can be deposited on substrate 32 as layer 234 by using a spin coating technique. Subsequent layer 234 can be patterned using mold 26. The effect of the present invention becomes significant when layer 234 is patterned using step and repeat techniques, during which different regions of layer 234 must be sequentially patterned and subsequently cured. 10 The foregoing specific examples of the invention are for illustrative purposes only. Many changes and modifications may be made without departing from the scope of the invention. For example, the composition ratio of each of the foregoing compositions may vary. Furthermore, although the invention has been discussed in terms of improving the uniformity of the control layer, the invention is equally applicable to other properties of the modified layer, such as adhesion (whether or not 5 is good), stress, uniform thickness Degree, thickness, strength, density, etc. Therefore, the scope of the invention is not limited by the foregoing description, but rather the scope of the accompanying claims and the full scope thereof. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a lithography system according to the present invention; 0 Fig. 2 is a view showing a patterned P layer as shown in Fig. 1 according to an embodiment of the present invention. A simplified bottom view of the lithography system shown in FIG. 3; FIG. 3 is a simplified bottom view of an imprinting apparatus separated from the hydration embossed layer shown in FIG. 4 is a region of the substrate shown in FIG. 2, in which a plan view is formed by patterning a polymerizable 20 1291204 fluid droplet pattern thereon; FIG. 5 is a polymerizable imprint material from the prior art. A cross-sectional view of a layer formed on a substrate; FIG. 6 is a cross-sectional view of the layer after receiving the RIE etching process according to the prior art; FIG. 7 is a line diagram showing Invention, the evaporation rate of different components in the ruthenium-containing imprintable material; FIG. 8 is a cross-sectional view showing that one release layer and one undercoat layer can be used according to the present invention; 10 FIG. 9 is a cross-sectional view , showing the relief layer applied to one of the flattening molds shown in FIG. 8; The first picture shows the cross-section in FIG 10, shows another specific embodiment of the present invention, a layer formed on a substrate. [Major component symbol description] 10...lithography system 26...patterned mold 12...bridge support member 28...recess 14...bridge 30...projection portion 16·.·platform support member 32...substrate 18···imprint head 34···imprint layer 20...moving platform 36...surface 22...radiation source 38...droplet 23...power source is generated as 46...small portion 24...stencil 48...small portion 21 1291204 50...surface 134...cured imprinting layer 52...recessed portion 136...surface 54··convex portion 150...containing litmus layer 80...flattening mold 152...recessed area 96...bottom Coating 154...etching layer 98...low surface energy coating 156...raised area 100...pattern 196...primer layer 101-149...droplet 234...layer 22

Claims (1)

94127323號專利申請案申請專利範圍修丰·未一 汉年/^ //日织更m士y 、申請專利範圍: __ 一種由一與一基材關聯之可流動區形成一層於該基材 上之方法,該方法包含: 形成該可流動區呈一組成物,該組成物具有多種可 聚合成分,各個成分具有相關之蒸鍍速率;以及 以一在預定範圍内之與該等多數可聚合成分之一 子集相關聯之相對蒸鍍速率於一段間隔時間内固化該 可流動區。 如申請專利範圍第1項之方法,其中該預定範圍為低於 每秒0.1%。 如申請專利範圍第1項之方法,其中該時間間隔係結東 於固化前且係於0秒至20秒之範圍。 如申請專利範圍第1項之方法,其中固化進一步包括使 該可流動區液體與一模版表面接觸,該段時間間隔係止 於該可流動區接觸該表面之前。 如申請專利範圍第1項之方法,其中沉積進一步包括配 送該可流動區於該基材表面上成為多個小滴。 如申請專利範圍第1項之方法,其中沉積進一步包括旋 塗該可聚合材料於該基材上。 一種用於形成具有均勻蝕刻特性的層之組成物,包含: 多數可聚合成分,包括含矽可聚合成分及不含矽可 聚合成分;以及 一引發劑成分來輔助該等多數可聚合成分介於流 化相態與固化相態間之相態變化,該等多數可聚合成分 1291204 之一亞群具有一預定之相對蒸鍍速率。 8. 如申請專利範圍第7項之組成物,其中該亞群包括全部 該等多數可聚合成分。Patent application No. 94127323, the scope of application for patent application is not included in the Han Dynasty / ^ / / Japanese weaving more m y, patent application scope: __ a layer formed by a flowable area associated with a substrate on the substrate The method comprises: forming the flowable region as a composition having a plurality of polymerizable components, each component having an associated evaporation rate; and a plurality of polymerizable components within a predetermined range The relative vapor deposition rate associated with a subset cures the flowable region over a period of time. The method of claim 1, wherein the predetermined range is less than 0.1% per second. The method of claim 1, wherein the time interval is tied to the range before curing and is in the range of 0 seconds to 20 seconds. The method of claim 1, wherein the curing further comprises contacting the flowable zone liquid with a stencil surface for a time interval before the flowable zone contacts the surface. The method of claim 1, wherein the depositing further comprises dispensing the flowable region onto the surface of the substrate to form a plurality of droplets. The method of claim 1, wherein the depositing further comprises spin coating the polymerizable material on the substrate. A composition for forming a layer having uniform etching characteristics, comprising: a plurality of polymerizable components including a ruthenium-containing polymerizable component and a ruthenium-free polymerizable component; and an initiator component to assist the majority of the polymerizable component The phase transition between the fluidized phase and the solidified phase, one of the plurality of polymerizable components 1291204 has a predetermined relative evaporation rate. 8. The composition of claim 7, wherein the subgroup comprises all of the plurality of polymerizable components. 1010 9. 如申請專利範圍第7項之組成物,其中該預定之相對蒸 鑛速率係低於每秒0.1%。 10. 如申請專利範圍第7項之組成物,其中該等多數可聚合 成分之亞群於一預定時間間隔期間具有該預定之相對 蒸鍍速率。 11. 如申請專利範圍第10項之組成物,其中該預定之時間間 隔為0至20秒。 12.如申請專利範圍第7項之組成物,其中該含矽之可聚合 成分包括丙稀醢氧基甲基家(三曱基石夕氧基)曱基石夕烧’ 以及該不含矽之可聚合成包括丙烯酸異冰片酯。 13. 如申請專利範圍第7項之組成物,其中該含矽之可聚合 成分包括丙烯醯氧基甲基參(三甲基矽氧基)矽烷,以及 該不含矽之可聚合成包括丙烯酸異冰片酯。 14. 如申請專利範圍第7項之組成物,其中該含矽之可聚合 成分包括3-丙烯醯氧基丙基貳(三甲基矽氧基)甲基矽 烷,以及該不含矽之可聚合成包括丙烯酸異冰片酯。 20 15.如申請專利範圍第7項之組成物,其中該含矽之可聚合 成分包括3-丙烯醯氧基丙基參(三甲基矽氧基)矽烷,以 及該不含矽之可聚合成包括丙烯酸異冰片酯。 29. The composition of claim 7, wherein the predetermined relative vaporization rate is less than 0.1% per second. 10. The composition of claim 7, wherein the subset of the plurality of polymerizable components has the predetermined relative vaporization rate during a predetermined time interval. 11. The composition of claim 10, wherein the predetermined time interval is 0 to 20 seconds. 12. The composition of claim 7, wherein the cerium-containing polymerizable component comprises acryloxymethyl (trimethyl sulfoxide) sulfhydryl sulphate and the bismuth-free Polymerization to include isobornyl acrylate. 13. The composition of claim 7, wherein the ruthenium-containing polymerizable component comprises acryloxymethyl ginseng (trimethyl decyloxy) decane, and the ruthenium-free polymerizable polymer comprises acrylic acid Isoflavone ester. 14. The composition of claim 7, wherein the cerium-containing polymerizable component comprises 3-propenyloxypropyl hydrazone (trimethyl decyloxy) methyl decane, and the bismuth-free Polymerization to include isobornyl acrylate. 20. The composition of claim 7, wherein the ruthenium-containing polymerizable component comprises 3-propenyloxypropyl ginseng (trimethyldecyloxy) decane, and the ruthenium-free polymerizable The inclusion comprises isobornyl acrylate. 2
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