JP2008509815A5 - - Google Patents
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- Publication number
- JP2008509815A5 JP2008509815A5 JP2007527859A JP2007527859A JP2008509815A5 JP 2008509815 A5 JP2008509815 A5 JP 2008509815A5 JP 2007527859 A JP2007527859 A JP 2007527859A JP 2007527859 A JP2007527859 A JP 2007527859A JP 2008509815 A5 JP2008509815 A5 JP 2008509815A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- silicon
- component
- acrylate
- polymerizable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 18
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 claims 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 15
- 229910052710 silicon Inorganic materials 0.000 claims 15
- 239000010703 silicon Substances 0.000 claims 15
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 claims 12
- 230000008020 evaporation Effects 0.000 claims 7
- 238000001704 evaporation Methods 0.000 claims 7
- YQFQCQOGRMUSGZ-UHFFFAOYSA-N 3-[methyl-bis(trimethylsilyloxy)silyl]propyl prop-2-enoate Chemical compound C[Si](C)(C)O[Si](C)(O[Si](C)(C)C)CCCOC(=O)C=C YQFQCQOGRMUSGZ-UHFFFAOYSA-N 0.000 claims 4
- 239000003999 initiator Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000004094 surface-active agent Substances 0.000 claims 4
- 239000004971 Cross linker Substances 0.000 claims 3
- SRMWFQRVWLBUDS-UHFFFAOYSA-N [methyl-bis(trimethylsilyloxy)silyl]methyl prop-2-enoate Chemical compound C[Si](C)(C)O[Si](C)(O[Si](C)(C)C)COC(=O)C=C SRMWFQRVWLBUDS-UHFFFAOYSA-N 0.000 claims 3
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims 3
- -1 acryloxymethylbis (trimethylsiloxy) silane Chemical compound 0.000 claims 3
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 239000012530 fluid Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- PPBAWVJOPQUAMY-UHFFFAOYSA-N 3-tris(trimethylsilyloxy)silylpropyl prop-2-enoate Chemical compound C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)CCCOC(=O)C=C PPBAWVJOPQUAMY-UHFFFAOYSA-N 0.000 claims 1
- IPKKBADATZEGIQ-UHFFFAOYSA-N tris(trimethylsilyloxy)silylmethyl prop-2-enoate Chemical compound C[Si](C)(C)O[Si](O[Si](C)(C)C)(O[Si](C)(C)C)COC(=O)C=C IPKKBADATZEGIQ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/919,062 US7282550B2 (en) | 2004-08-16 | 2004-08-16 | Composition to provide a layer with uniform etch characteristics |
| US10/919,224 US7939131B2 (en) | 2004-08-16 | 2004-08-16 | Method to provide a layer with uniform etch characteristics |
| US10/919,224 | 2004-08-16 | ||
| US10/919,062 | 2004-08-16 | ||
| PCT/US2005/027933 WO2006023297A1 (en) | 2004-08-16 | 2005-08-05 | Method and composition to provide a layer with uniform etch characteristics |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008509815A JP2008509815A (ja) | 2008-04-03 |
| JP2008509815A5 true JP2008509815A5 (enExample) | 2011-03-03 |
| JP5020079B2 JP5020079B2 (ja) | 2012-09-05 |
Family
ID=35967849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007527859A Expired - Lifetime JP5020079B2 (ja) | 2004-08-16 | 2005-08-05 | 均一なエッチング特性を有する層を提供する方法及び組成物 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5020079B2 (enExample) |
| TW (1) | TWI291204B (enExample) |
| WO (1) | WO2006023297A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8142850B2 (en) * | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
| US8707890B2 (en) * | 2006-07-18 | 2014-04-29 | Asml Netherlands B.V. | Imprint lithography |
| WO2008154059A2 (en) | 2007-04-02 | 2008-12-18 | Regents Of The University Of California | Rotating frame gradient fields for mri and nmr in low polarizing magnetic fields |
| JP4908369B2 (ja) * | 2007-10-02 | 2012-04-04 | 株式会社東芝 | インプリント方法及びインプリントシステム |
| US20090212012A1 (en) * | 2008-02-27 | 2009-08-27 | Molecular Imprints, Inc. | Critical dimension control during template formation |
| NL2003875A (en) * | 2009-02-04 | 2010-08-05 | Asml Netherlands Bv | Imprint lithography method and apparatus. |
| JP5887871B2 (ja) * | 2011-11-24 | 2016-03-16 | 富士通株式会社 | 被膜形成材料及びパターン形成方法 |
| JP6071255B2 (ja) * | 2012-06-04 | 2017-02-01 | キヤノン株式会社 | 光硬化物 |
| US10892167B2 (en) * | 2019-03-05 | 2021-01-12 | Canon Kabushiki Kaisha | Gas permeable superstrate and methods of using the same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5170192A (en) * | 1990-11-29 | 1992-12-08 | Pilkington Visioncare, Inc. | Oxygen permeable bifocal contact lenses and their manufacture |
| US6143433A (en) * | 1994-09-14 | 2000-11-07 | Mitsui Chemicals, Inc. | Organic electroluminescent device and process for producing the same |
| US20030124853A1 (en) * | 1998-06-25 | 2003-07-03 | Mitsubishi Materials Silicon Corporation | Anisotropic etching method and apparatus |
| EP1395417B1 (en) * | 2001-05-29 | 2006-08-02 | Essilor International Compagnie Generale D'optique | Method for forming on-site a coated optical article |
| MY144124A (en) * | 2002-07-11 | 2011-08-15 | Molecular Imprints Inc | Step and repeat imprint lithography systems |
-
2005
- 2005-08-05 WO PCT/US2005/027933 patent/WO2006023297A1/en not_active Ceased
- 2005-08-05 JP JP2007527859A patent/JP5020079B2/ja not_active Expired - Lifetime
- 2005-08-11 TW TW94127323A patent/TWI291204B/zh not_active IP Right Cessation
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