JP5005571B2 - 液処理装置 - Google Patents
液処理装置 Download PDFInfo
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- JP5005571B2 JP5005571B2 JP2008033522A JP2008033522A JP5005571B2 JP 5005571 B2 JP5005571 B2 JP 5005571B2 JP 2008033522 A JP2008033522 A JP 2008033522A JP 2008033522 A JP2008033522 A JP 2008033522A JP 5005571 B2 JP5005571 B2 JP 5005571B2
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- JP
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- Prior art keywords
- lift pin
- cleaning liquid
- pin plate
- processing apparatus
- liquid processing
- Prior art date
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- 239000007788 liquid Substances 0.000 title claims description 183
- 238000004140 cleaning Methods 0.000 claims description 108
- 239000011261 inert gas Substances 0.000 claims description 47
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 230000003028 elevating effect Effects 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 58
- 239000000126 substance Substances 0.000 description 24
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000001035 drying Methods 0.000 description 8
- 230000001154 acute effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000004696 Poly ether ether ketone Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920002530 polyetherether ketone Polymers 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000011796 hollow space material Substances 0.000 description 2
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Description
被処理体を保持するとともに、中空になった保持プレートと、
前記保持プレートに固定連結され、中空になった回転軸と、
前記回転軸を所定の回転方向に回転駆動する回転駆動部と、
前記保持プレートの中空内に配置され、本体と前記被処理体を支持するリフトピンとを有するリフトピンプレートと、
前記回転軸の中空内で延在し、前記保持プレートに保持された前記被処理体に洗浄液を供給する洗浄液供給部と、
前記回転軸の中空内で延在し、前記保持プレートに保持された前記被処理体に不活性ガスを供給する不活性ガス供給部と、
前記リフトピンプレートを昇降させて、上方位置および下方位置に配置させる昇降部材と、
前記被処理体を洗浄した洗浄液を排出する排液管と、
を備え、
前記リフトピンプレートは傾斜面を有し、
前記不活性ガス供給部の先端が、前記洗浄液供給部の先端よりも高い位置に位置している。
前記被処理体を洗浄した洗浄液は、前記排液管を介して、その自重により排出されることが好ましい。
吸引装置をさらに備え、
前記被処理体を洗浄した洗浄液は、前記吸引装置による駆動力を受けて前記排液管を介して、排出されることが好ましい。
前記リフトピンプレートの傾斜面は、前記排液管の先端に向かって降下することが好ましい。
前記リフトピンプレートの傾斜面は、周縁外方に向かって降下することが好ましい。
前記リフトピンプレートの傾斜面は、前記排液管の先端に向かって降下する内周部分と、当該内周部分の周縁外方に位置して周縁外方に向かって降下する外周部分とを有することが好ましい。
前記リフトピンは、前記リフトピンプレートの本体の周縁外方に支持部を介して設けられ、
当該支持部の横断面は多角形からなり、当該多角形の頂角が上方に向かっていることが好ましい。
前記保持プレートの内周部分は、前記リフトピンプレートの傾斜面と略同一角度で傾斜するとともに、当該リフトピンプレートの傾斜面と同一平面内に位置する傾斜面を有することが好ましい。
以下、本発明に係る液処理装置および液処理方法の第1の実施の形態について、図面を参照して説明する。ここで、図1乃至図5は本発明の第1の実施の形態を示す図である。
次に、図6乃至図8により、本発明の第2の実施の形態について説明する。図6乃至図8に示す第2の実施の形態は、リフトピンプレート20の形態を変えたものであり、その他の構成は図1乃至図5に示す第1の実施の形態と略同一である。
次に、図9および図10により、本発明の第3の実施の形態について説明する。図9および図10に示す第3の実施の形態は、リフトピンプレート20の形態を変えたものであり、その他の構成は図1乃至図5に示す第1の実施の形態と略同一である。
2 回転軸
10 不活性ガス供給管(不活性ガス供給部)
11 裏面側洗浄液供給管(洗浄液供給部)
13 排液管
20 リフトピンプレート
21 リフトピン
22 支持部
25 本体
25a−25d 傾斜面
30 昇降部材
40 回転駆動部
50 不活性ガス供給源
51 薬液供給源
52 リンス液供給源
57 三方弁
58 吸引装置
81 上方位置づけ工程
82 支持工程
83 下方位置づけ工程
91 薬液供給工程
92 リンス工程
93 排出工程
95 乾燥工程
96 搬出工程
W ウエハ(被処理体)
Claims (10)
- 被処理体を保持するとともに、中心部が中空になった保持プレートと、
前記保持プレートに固定連結され、中心部が中空になった回転軸と、
前記回転軸を所定の回転方向に回転駆動する回転駆動部と、
前記保持プレートの中空内に配置されるとともに、中心部が中空形状になった本体と、該本体に設けられて前記被処理体を支持するリフトピンとを有するリフトピンプレートと、
前記回転軸の中空内および前記リフトピンプレートの前記本体の中空内で上下方向に延在し、前記保持プレートに保持された前記被処理体に洗浄液を供給する洗浄液供給部と、前記回転軸の中空内および前記リフトピンプレートの前記本体の中空内で上下方向に延在し、前記保持プレートに保持された前記被処理体に不活性ガスを供給する不活性ガス供給部と、
前記リフトピンプレートを昇降させて、上方位置および下方位置に配置させる昇降部材と、
前記被処理体を洗浄した洗浄液を排出する排液管と、
を備え、
前記リフトピンプレートの前記本体は傾斜面を有し、
前記リフトピンプレートが前記下方位置にあるときに、前記不活性ガス供給部の先端は、前記洗浄液供給部の先端よりも高い位置に位置するとともに、前記リフトピンプレートの前記本体の傾斜面の上端よりも高い位置に位置していることを特徴とする液処理装置。 - 前記被処理体を洗浄した洗浄液は、前記排液管を介して、その自重により排出されることを特徴とする請求項1に記載の液処理装置。
- 吸引装置をさらに備え、
前記被処理体を洗浄した洗浄液は、前記吸引装置による駆動力を受けて前記排液管を介して、排出されることを特徴とする請求項1に記載の液処理装置。 - 前記リフトピンプレートの前記本体の傾斜面は、前記排液管の先端に向かって降下することを特徴とする請求項1乃至3のいずれか1項に記載の液処理装置。
- 前記リフトピンプレートの前記本体の傾斜面は、周縁外方に向かって降下することを特徴とする請求項1乃至3のいずれか1項に記載の液処理装置。
- 前記リフトピンプレートの前記本体の傾斜面は、前記排液管の先端に向かって降下する内周部分と、当該内周部分の周縁外方に位置して周縁外方に向かって降下する外周部分とを有することを特徴とする請求項1乃至3のいずれか1項に記載の液処理装置。
- 前記リフトピンは、前記リフトピンプレートの本体の周縁外方に支持部を介して設けられ、
当該支持部の横断面は多角形からなり、当該多角形の頂角が上方に向かっていることを特徴とする請求項1乃至6のいずれか1項に記載の液処理装置。 - 前記保持プレートの内周部分は、前記リフトピンプレートの傾斜面と略同一角度で傾斜するとともに、当該リフトピンプレートの傾斜面と同一平面内に位置する傾斜面を有することを特徴とする請求項1乃至4のいずれか1項に記載の液処理装置。
- 前記不活性ガス供給管は、先端に向かって細くなる開口を有することを特徴とする請求項1乃至8のいずれか1項に記載の液処理装置。
- 前記洗浄液供給部は、前記排液管としても機能することを特徴とする請求項1乃至9のいずれか1項に記載の液処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008033522A JP5005571B2 (ja) | 2008-02-14 | 2008-02-14 | 液処理装置 |
KR1020090009813A KR101215254B1 (ko) | 2008-02-14 | 2009-02-06 | 액처리 장치 |
TW098104388A TWI404130B (zh) | 2008-02-14 | 2009-02-11 | 液體處理裝置 |
US12/371,126 US8444772B2 (en) | 2008-02-14 | 2009-02-13 | Liquid processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008033522A JP5005571B2 (ja) | 2008-02-14 | 2008-02-14 | 液処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009194167A JP2009194167A (ja) | 2009-08-27 |
JP5005571B2 true JP5005571B2 (ja) | 2012-08-22 |
Family
ID=40953745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008033522A Active JP5005571B2 (ja) | 2008-02-14 | 2008-02-14 | 液処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8444772B2 (ja) |
JP (1) | JP5005571B2 (ja) |
KR (1) | KR101215254B1 (ja) |
TW (1) | TWI404130B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10290518B2 (en) | 2014-08-27 | 2019-05-14 | Tokyo Electron Limited | Substrate liquid processing apparatus |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5156661B2 (ja) * | 2009-02-12 | 2013-03-06 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5642574B2 (ja) * | 2011-01-25 | 2014-12-17 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
KR102640172B1 (ko) | 2019-07-03 | 2024-02-23 | 삼성전자주식회사 | 기판 처리 장치 및 이의 구동 방법 |
CN110197805A (zh) * | 2019-07-05 | 2019-09-03 | 德淮半导体有限公司 | 半导体设备及作业方法 |
JP7287271B2 (ja) * | 2019-12-26 | 2023-06-06 | 株式会社Sumco | ワークの洗浄装置および洗浄方法 |
KR102535766B1 (ko) * | 2021-08-24 | 2023-05-26 | (주)디바이스이엔지 | 백 노즐 어셈블리를 포함하는 기판 처리장치 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62164347A (ja) | 1986-01-16 | 1987-07-21 | Csk Corp | 時分割多重通信入出力装置 |
JPH0334750Y2 (ja) * | 1986-04-09 | 1991-07-23 | ||
JP3638374B2 (ja) | 1996-04-25 | 2005-04-13 | 大日本スクリーン製造株式会社 | 回転式基板処理装置 |
JP4327304B2 (ja) * | 1999-07-27 | 2009-09-09 | 芝浦メカトロニクス株式会社 | スピン処理装置 |
TW430960B (en) * | 1999-11-09 | 2001-04-21 | Liu Yu Tsai | Rotary chuck for dual-sided processing |
JP4402226B2 (ja) | 1999-11-26 | 2010-01-20 | 芝浦メカトロニクス株式会社 | スピン処理装置 |
US6578853B1 (en) * | 2000-12-22 | 2003-06-17 | Lam Research Corporation | Chuck assembly for use in a spin, rinse, and dry module and methods for making and implementing the same |
US6742279B2 (en) * | 2002-01-16 | 2004-06-01 | Applied Materials Inc. | Apparatus and method for rinsing substrates |
JP4805003B2 (ja) * | 2006-04-18 | 2011-11-02 | 東京エレクトロン株式会社 | 液処理装置 |
-
2008
- 2008-02-14 JP JP2008033522A patent/JP5005571B2/ja active Active
-
2009
- 2009-02-06 KR KR1020090009813A patent/KR101215254B1/ko active IP Right Grant
- 2009-02-11 TW TW098104388A patent/TWI404130B/zh active
- 2009-02-13 US US12/371,126 patent/US8444772B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10290518B2 (en) | 2014-08-27 | 2019-05-14 | Tokyo Electron Limited | Substrate liquid processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
US8444772B2 (en) | 2013-05-21 |
TW200941567A (en) | 2009-10-01 |
US20090205155A1 (en) | 2009-08-20 |
KR101215254B1 (ko) | 2012-12-24 |
TWI404130B (zh) | 2013-08-01 |
JP2009194167A (ja) | 2009-08-27 |
KR20090088313A (ko) | 2009-08-19 |
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