JP5000329B2 - 不揮発性半導体記憶装置及びその制御方法 - Google Patents

不揮発性半導体記憶装置及びその制御方法 Download PDF

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JP5000329B2
JP5000329B2 JP2007046016A JP2007046016A JP5000329B2 JP 5000329 B2 JP5000329 B2 JP 5000329B2 JP 2007046016 A JP2007046016 A JP 2007046016A JP 2007046016 A JP2007046016 A JP 2007046016A JP 5000329 B2 JP5000329 B2 JP 5000329B2
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memory cell
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JP2007242217A (ja
JP2007242217A5 (https=
Inventor
夏夫 味香
章二 宿利
雅章 三原
良樹 川尻
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Genusion Inc
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Genusion Inc
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JP2007046016A 2007-02-26 2007-02-26 不揮発性半導体記憶装置及びその制御方法 Expired - Fee Related JP5000329B2 (ja)

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JP2007046016A JP5000329B2 (ja) 2007-02-26 2007-02-26 不揮発性半導体記憶装置及びその制御方法

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JP2007046016A JP5000329B2 (ja) 2007-02-26 2007-02-26 不揮発性半導体記憶装置及びその制御方法

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JP2006066627A Division JP3976774B1 (ja) 2006-03-10 2006-03-10 不揮発性半導体記憶装置およびその制御方法

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JP2007242217A JP2007242217A (ja) 2007-09-20
JP2007242217A5 JP2007242217A5 (https=) 2009-04-23
JP5000329B2 true JP5000329B2 (ja) 2012-08-15

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US9824738B2 (en) 2016-03-11 2017-11-21 Toshiba Memory Corporation Semiconductor storage device

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* Cited by examiner, † Cited by third party
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JPH10312694A (ja) * 1997-05-08 1998-11-24 Oki Electric Ind Co Ltd 半導体不揮発性メモリおよびそのための電源回路
US6069824A (en) * 1999-03-03 2000-05-30 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device

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