JP4996886B2 - フォトレジスト組成物を利用したパターンの形成方法、及びこれを利用した薄膜トランジスタ表示板の製造方法 - Google Patents

フォトレジスト組成物を利用したパターンの形成方法、及びこれを利用した薄膜トランジスタ表示板の製造方法 Download PDF

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Publication number
JP4996886B2
JP4996886B2 JP2006189573A JP2006189573A JP4996886B2 JP 4996886 B2 JP4996886 B2 JP 4996886B2 JP 2006189573 A JP2006189573 A JP 2006189573A JP 2006189573 A JP2006189573 A JP 2006189573A JP 4996886 B2 JP4996886 B2 JP 4996886B2
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JP
Japan
Prior art keywords
group
photoresist
photoresist pattern
film transistor
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006189573A
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English (en)
Japanese (ja)
Other versions
JP2007017987A5 (enExample
JP2007017987A (ja
Inventor
廷 敏 朴
羲 國 李
振 豪 周
祐 ▲せき▼ 全
斗 喜 鄭
東 敏 金
基 植 崔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Dongjin Semichem Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Samsung Electronics Co Ltd, Dongjin Semichem Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007017987A publication Critical patent/JP2007017987A/ja
Publication of JP2007017987A5 publication Critical patent/JP2007017987A5/ja
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Publication of JP4996886B2 publication Critical patent/JP4996886B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Crystal (AREA)
JP2006189573A 2005-07-08 2006-07-10 フォトレジスト組成物を利用したパターンの形成方法、及びこれを利用した薄膜トランジスタ表示板の製造方法 Expired - Fee Related JP4996886B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050061606A KR101240643B1 (ko) 2005-07-08 2005-07-08 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법
KR10-2005-0061606 2005-07-08

Publications (3)

Publication Number Publication Date
JP2007017987A JP2007017987A (ja) 2007-01-25
JP2007017987A5 JP2007017987A5 (enExample) 2009-08-27
JP4996886B2 true JP4996886B2 (ja) 2012-08-08

Family

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Family Applications (1)

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JP2006189573A Expired - Fee Related JP4996886B2 (ja) 2005-07-08 2006-07-10 フォトレジスト組成物を利用したパターンの形成方法、及びこれを利用した薄膜トランジスタ表示板の製造方法

Country Status (5)

Country Link
US (1) US7291439B2 (enExample)
JP (1) JP4996886B2 (enExample)
KR (1) KR101240643B1 (enExample)
CN (1) CN1892426B (enExample)
TW (1) TWI395056B (enExample)

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KR100495454B1 (ko) * 2002-03-27 2005-06-14 주식회사 코리아나화장품 피토라이트를 포함하는 미백 화장료 조성물
KR101157148B1 (ko) * 2005-08-08 2012-06-22 삼성전자주식회사 반도체 장치의 제조방법
KR101298940B1 (ko) * 2005-08-23 2013-08-22 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
KR101268424B1 (ko) * 2005-10-31 2013-05-28 에이지이엠코리아 주식회사 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
JP2007142388A (ja) * 2005-11-17 2007-06-07 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
KR101293155B1 (ko) * 2006-02-01 2013-08-12 주식회사 동진쎄미켐 패턴 형성용 포토레지스트 조성물 및 이를 이용한 표시장치 패턴 형성 방법
KR101392291B1 (ko) * 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
KR101430962B1 (ko) * 2008-03-04 2014-08-18 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법
WO2009125752A1 (ja) * 2008-04-10 2009-10-15 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及びそれを用いた感光性樹脂積層体
US8623231B2 (en) * 2008-06-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for etching an ultra thin film
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법
KR20130017615A (ko) * 2011-08-11 2013-02-20 삼성디스플레이 주식회사 포토레지스트 조성물, 이를 이용한 패턴의 형성 방법 및 표시 기판의 제조 방법
CN102610564B (zh) * 2012-02-07 2014-06-25 深圳市华星光电技术有限公司 Tft阵列基板的制作方法
JP7555759B2 (ja) * 2020-08-26 2024-09-25 東京応化工業株式会社 エッチング方法、及び感光性樹脂組成物

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Also Published As

Publication number Publication date
TW200707095A (en) 2007-02-16
TWI395056B (zh) 2013-05-01
US20070009833A1 (en) 2007-01-11
KR20070006346A (ko) 2007-01-11
CN1892426B (zh) 2011-12-21
KR101240643B1 (ko) 2013-03-08
US7291439B2 (en) 2007-11-06
JP2007017987A (ja) 2007-01-25
CN1892426A (zh) 2007-01-10

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