CN1892426B - 光刻胶组合物,薄膜图案形成方法、tft阵列面板制造方法 - Google Patents

光刻胶组合物,薄膜图案形成方法、tft阵列面板制造方法 Download PDF

Info

Publication number
CN1892426B
CN1892426B CN2006100987396A CN200610098739A CN1892426B CN 1892426 B CN1892426 B CN 1892426B CN 2006100987396 A CN2006100987396 A CN 2006100987396A CN 200610098739 A CN200610098739 A CN 200610098739A CN 1892426 B CN1892426 B CN 1892426B
Authority
CN
China
Prior art keywords
photoresist
film
film transistor
etching
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006100987396A
Other languages
English (en)
Chinese (zh)
Other versions
CN1892426A (zh
Inventor
朴廷敏
李羲国
周振豪
全祐奭
郑斗喜
金东敏
崔基植
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd, Dongjin Semichem Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1892426A publication Critical patent/CN1892426A/zh
Application granted granted Critical
Publication of CN1892426B publication Critical patent/CN1892426B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Crystal (AREA)
CN2006100987396A 2005-07-08 2006-07-10 光刻胶组合物,薄膜图案形成方法、tft阵列面板制造方法 Expired - Fee Related CN1892426B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020050061606 2005-07-08
KR10-2005-0061606 2005-07-08
KR1020050061606A KR101240643B1 (ko) 2005-07-08 2005-07-08 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법

Publications (2)

Publication Number Publication Date
CN1892426A CN1892426A (zh) 2007-01-10
CN1892426B true CN1892426B (zh) 2011-12-21

Family

ID=37597413

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006100987396A Expired - Fee Related CN1892426B (zh) 2005-07-08 2006-07-10 光刻胶组合物,薄膜图案形成方法、tft阵列面板制造方法

Country Status (5)

Country Link
US (1) US7291439B2 (enExample)
JP (1) JP4996886B2 (enExample)
KR (1) KR101240643B1 (enExample)
CN (1) CN1892426B (enExample)
TW (1) TWI395056B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100495454B1 (ko) * 2002-03-27 2005-06-14 주식회사 코리아나화장품 피토라이트를 포함하는 미백 화장료 조성물
KR101157148B1 (ko) * 2005-08-08 2012-06-22 삼성전자주식회사 반도체 장치의 제조방법
KR101298940B1 (ko) * 2005-08-23 2013-08-22 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
KR101268424B1 (ko) * 2005-10-31 2013-05-28 에이지이엠코리아 주식회사 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
JP2007142388A (ja) * 2005-11-17 2007-06-07 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
KR101293155B1 (ko) * 2006-02-01 2013-08-12 주식회사 동진쎄미켐 패턴 형성용 포토레지스트 조성물 및 이를 이용한 표시장치 패턴 형성 방법
KR101392291B1 (ko) * 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
KR101430962B1 (ko) * 2008-03-04 2014-08-18 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법
WO2009125752A1 (ja) * 2008-04-10 2009-10-15 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及びそれを用いた感光性樹脂積層体
US8623231B2 (en) * 2008-06-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for etching an ultra thin film
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법
KR20130017615A (ko) * 2011-08-11 2013-02-20 삼성디스플레이 주식회사 포토레지스트 조성물, 이를 이용한 패턴의 형성 방법 및 표시 기판의 제조 방법
CN102610564B (zh) * 2012-02-07 2014-06-25 深圳市华星光电技术有限公司 Tft阵列基板的制作方法
JP7555759B2 (ja) * 2020-08-26 2024-09-25 東京応化工業株式会社 エッチング方法、及び感光性樹脂組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1083938A (zh) * 1992-09-09 1994-03-16 三星电子株式会社 光抗蚀剂组合物及应用该组合物产生图形的方法
US5912102A (en) * 1994-12-28 1999-06-15 Nippon Zeon Co., Ltd. Positive resist composition
US6380006B2 (en) * 2000-06-12 2002-04-30 Nec Corporation Pattern formation method and method of manufacturing display using it
CN1606714A (zh) * 2001-10-19 2005-04-13 三星电子株式会社 具有高耐热性的光致抗蚀剂组合物

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731179A (en) * 1980-07-31 1982-02-19 Sharp Corp Formation of thin-film transistor
JP3052330B2 (ja) * 1990-04-17 2000-06-12 ジェイエスアール株式会社 半導体製造用感放射線性樹脂組成物
JP3466218B2 (ja) * 1992-06-04 2003-11-10 住友化学工業株式会社 ポジ型レジスト組成物
JP3209058B2 (ja) * 1995-10-18 2001-09-17 住友化学工業株式会社 ポジ型レジスト組成物
KR100209425B1 (ko) 1996-10-29 1999-07-15 전주범 오버행 구조 형성 방법
JP3105459B2 (ja) * 1996-10-31 2000-10-30 東京応化工業株式会社 ポジ型ホトレジスト組成物およびこれを用いた多層レジスト材料
US6177226B1 (en) * 1997-05-01 2001-01-23 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition and process for forming contact hole
KR100237684B1 (ko) 1997-01-28 2000-01-15 윤종용 박막 트랜지스터 기판 및 그 제조 방법
JPH10221846A (ja) * 1997-01-31 1998-08-21 Shin Etsu Chem Co Ltd 感光剤の製造方法およびこの感光剤を含有するポジ型フォトレジスト組成物
JPH1115151A (ja) * 1997-05-01 1999-01-22 Tokyo Ohka Kogyo Co Ltd コンタクトホール形成用ポジ型ホトレジスト組成物およびコンタクトホールの形成方法
JP3600713B2 (ja) * 1997-08-06 2004-12-15 東京応化工業株式会社 ポジ型ホトレジスト組成物
KR100341122B1 (ko) 1998-12-29 2002-10-25 주식회사 현대 디스플레이 테크놀로지 박막트랜지스터의게이트전극형성방법
US6461886B1 (en) 2000-05-13 2002-10-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP3616584B2 (ja) * 2000-06-12 2005-02-02 鹿児島日本電気株式会社 パターン形成方法及びそれを用いた表示装置の製造方法
JP3507771B2 (ja) * 2000-07-03 2004-03-15 鹿児島日本電気株式会社 パターン形成方法及び薄膜トランジスタの製造方法
KR100704510B1 (ko) 2001-02-12 2007-04-09 엘지.필립스 엘시디 주식회사 횡전계형 액정표시장치용 하부 기판 및 그의 제조방법
KR100769162B1 (ko) 2001-03-07 2007-10-23 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
JP4673513B2 (ja) * 2001-08-01 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3875544B2 (ja) 2001-11-29 2007-01-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 液晶表示装置の製造方法及び液晶表示装置
JP2004177683A (ja) 2002-11-27 2004-06-24 Clariant (Japan) Kk 超高耐熱ポジ型感光性組成物を用いたパターン形成方法
JP2005049667A (ja) 2003-07-30 2005-02-24 Quanta Display Japan Inc 液晶表示装置とその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1083938A (zh) * 1992-09-09 1994-03-16 三星电子株式会社 光抗蚀剂组合物及应用该组合物产生图形的方法
US5912102A (en) * 1994-12-28 1999-06-15 Nippon Zeon Co., Ltd. Positive resist composition
US6380006B2 (en) * 2000-06-12 2002-04-30 Nec Corporation Pattern formation method and method of manufacturing display using it
CN1606714A (zh) * 2001-10-19 2005-04-13 三星电子株式会社 具有高耐热性的光致抗蚀剂组合物

Also Published As

Publication number Publication date
JP4996886B2 (ja) 2012-08-08
KR20070006346A (ko) 2007-01-11
KR101240643B1 (ko) 2013-03-08
TW200707095A (en) 2007-02-16
US7291439B2 (en) 2007-11-06
TWI395056B (zh) 2013-05-01
CN1892426A (zh) 2007-01-10
US20070009833A1 (en) 2007-01-11
JP2007017987A (ja) 2007-01-25

Similar Documents

Publication Publication Date Title
CN1892426B (zh) 光刻胶组合物,薄膜图案形成方法、tft阵列面板制造方法
US20120237873A1 (en) Positive photosensitive resin composition, cured film formed from the same, and device having cured film
TWI468418B (zh) 光阻樹脂及使用此樹脂形成圖案的方法及製備顯示器面板的方法
CN104007617A (zh) 正型感光性树脂组合物及其图案形成方法
CN1752852B (zh) 用于剥离光刻胶的组合物及薄膜晶体管阵列面板制造方法
JP4730093B2 (ja) フォトレジスト組成物、及びこれを利用したパターンの形成方法、並びに薄膜トランジスタ表示板の製造方法
KR101268424B1 (ko) 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
KR101430962B1 (ko) 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법
US20140030881A1 (en) Photoresist composition, thin film transistor array panel, and method of manufacturing the same
US20070111412A1 (en) Thin film transistor array panel and method of manufacturing the same
CN102841504A (zh) 正型感光性树脂组成物及使用该组成物形成图案的方法
US20110236825A1 (en) Photoresist composition and method of forming photoresist pattern using the same
KR101316726B1 (ko) 감광성 수지 조성물 및 이를 사용한 표시판의 제조 방법
US20110287360A1 (en) Photoresist composition and method of forming pattern by using the same
CN104865793A (zh) 光致抗蚀剂组合物及使用其制造显示基板的方法
KR20060090519A (ko) 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한층상 부재 형성 방법 및 박막 트랜지스터 표시판의 제조방법
CN107544209A (zh) 正型感光性树脂组合物及其应用
KR20070056675A (ko) 박막 트랜지스터 표시판의 제조 방법
CN104076602A (zh) 正型感光性树脂组合物及其图案形成方法
KR101205471B1 (ko) 액정표시소자용 감광성 수지 조성물
KR20070066445A (ko) 표시 기판의 제조방법
KR20060070354A (ko) 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한패턴의 형성 방법 및 박막 트랜지스터 표시판의 제조 방법
KR20100012120A (ko) 에칭용 필름형 전사재료
KR20060086020A (ko) 감광성 수지 조성물, 상기 감광성 수지 조성물로 이루어진패턴을 포함하는 박막 표시판 및 그 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG DISPLAY CO., LTD.

Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD.

Effective date: 20130110

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20130110

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co.,Ltd.

Patentee after: Dongjin Semichem Co., Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co.,Ltd.

Patentee before: Dongjin Semichem Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111221

Termination date: 20210710

CF01 Termination of patent right due to non-payment of annual fee