KR101240643B1 - 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 - Google Patents

포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 Download PDF

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Publication number
KR101240643B1
KR101240643B1 KR1020050061606A KR20050061606A KR101240643B1 KR 101240643 B1 KR101240643 B1 KR 101240643B1 KR 1020050061606 A KR1020050061606 A KR 1020050061606A KR 20050061606 A KR20050061606 A KR 20050061606A KR 101240643 B1 KR101240643 B1 KR 101240643B1
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KR
South Korea
Prior art keywords
photoresist
group
photoresist pattern
thin film
film transistor
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Expired - Fee Related
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KR1020050061606A
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English (en)
Korean (ko)
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KR20070006346A (ko
Inventor
박정민
이희국
주진호
전우석
정두희
김동민
최기식
Original Assignee
삼성디스플레이 주식회사
주식회사 동진쎄미켐
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Priority to KR1020050061606A priority Critical patent/KR101240643B1/ko
Priority to US11/483,794 priority patent/US7291439B2/en
Priority to TW095124831A priority patent/TWI395056B/zh
Priority to CN2006100987396A priority patent/CN1892426B/zh
Priority to JP2006189573A priority patent/JP4996886B2/ja
Publication of KR20070006346A publication Critical patent/KR20070006346A/ko
Application granted granted Critical
Publication of KR101240643B1 publication Critical patent/KR101240643B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Crystal (AREA)
KR1020050061606A 2005-07-08 2005-07-08 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 Expired - Fee Related KR101240643B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020050061606A KR101240643B1 (ko) 2005-07-08 2005-07-08 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법
US11/483,794 US7291439B2 (en) 2005-07-08 2006-07-07 Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same
TW095124831A TWI395056B (zh) 2005-07-08 2006-07-07 光阻組成物，使用該光阻組成物形成薄膜圖案之方法以及使用該光阻組成物製造薄膜電晶體陣列面板之方法
CN2006100987396A CN1892426B (zh) 2005-07-08 2006-07-10 光刻胶组合物,薄膜图案形成方法、tft阵列面板制造方法
JP2006189573A JP4996886B2 (ja) 2005-07-08 2006-07-10 フォトレジスト組成物を利用したパターンの形成方法、及びこれを利用した薄膜トランジスタ表示板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050061606A KR101240643B1 (ko) 2005-07-08 2005-07-08 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법

Publications (2)

Publication Number Publication Date
KR20070006346A KR20070006346A (ko) 2007-01-11
KR101240643B1 true KR101240643B1 (ko) 2013-03-08

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KR1020050061606A Expired - Fee Related KR101240643B1 (ko) 2005-07-08 2005-07-08 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터표시판의 제조 방법

Country Status (5)

Country Link
US (1) US7291439B2 (enExample)
JP (1) JP4996886B2 (enExample)
KR (1) KR101240643B1 (enExample)
CN (1) CN1892426B (enExample)
TW (1) TWI395056B (enExample)

Cited By (1)

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KR100495454B1 (ko) * 2002-03-27 2005-06-14 주식회사 코리아나화장품 피토라이트를 포함하는 미백 화장료 조성물

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KR101157148B1 (ko) * 2005-08-08 2012-06-22 삼성전자주식회사 반도체 장치의 제조방법
KR101298940B1 (ko) * 2005-08-23 2013-08-22 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
KR101268424B1 (ko) * 2005-10-31 2013-05-28 에이지이엠코리아 주식회사 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
JP2007142388A (ja) * 2005-11-17 2007-06-07 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
KR101293155B1 (ko) * 2006-02-01 2013-08-12 주식회사 동진쎄미켐 패턴 형성용 포토레지스트 조성물 및 이를 이용한 표시장치 패턴 형성 방법
KR101392291B1 (ko) * 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
KR101430962B1 (ko) * 2008-03-04 2014-08-18 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 어레이 기판의 제조방법
WO2009125752A1 (ja) * 2008-04-10 2009-10-15 旭化成イーマテリアルズ株式会社 感光性樹脂組成物及びそれを用いた感光性樹脂積層体
US8623231B2 (en) * 2008-06-11 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for etching an ultra thin film
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법
KR20130017615A (ko) * 2011-08-11 2013-02-20 삼성디스플레이 주식회사 포토레지스트 조성물, 이를 이용한 패턴의 형성 방법 및 표시 기판의 제조 방법
CN102610564B (zh) * 2012-02-07 2014-06-25 深圳市华星光电技术有限公司 Tft阵列基板的制作方法
JP7555759B2 (ja) * 2020-08-26 2024-09-25 東京応化工業株式会社 エッチング方法、及び感光性樹脂組成物

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Also Published As

Publication number Publication date
TW200707095A (en) 2007-02-16
TWI395056B (zh) 2013-05-01
JP4996886B2 (ja) 2012-08-08
US20070009833A1 (en) 2007-01-11
KR20070006346A (ko) 2007-01-11
CN1892426B (zh) 2011-12-21
US7291439B2 (en) 2007-11-06
JP2007017987A (ja) 2007-01-25
CN1892426A (zh) 2007-01-10

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