JP4989571B2 - 多孔質膜の前駆体組成物の溶液 - Google Patents

多孔質膜の前駆体組成物の溶液 Download PDF

Info

Publication number
JP4989571B2
JP4989571B2 JP2008173910A JP2008173910A JP4989571B2 JP 4989571 B2 JP4989571 B2 JP 4989571B2 JP 2008173910 A JP2008173910 A JP 2008173910A JP 2008173910 A JP2008173910 A JP 2008173910A JP 4989571 B2 JP4989571 B2 JP 4989571B2
Authority
JP
Japan
Prior art keywords
film
acid
group
compound
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008173910A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010016130A (ja
JP2010016130A5 (enExample
Inventor
正明 平川
高博 中山
伸一 朝比奈
貴久 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2008173910A priority Critical patent/JP4989571B2/ja
Publication of JP2010016130A publication Critical patent/JP2010016130A/ja
Publication of JP2010016130A5 publication Critical patent/JP2010016130A5/ja
Application granted granted Critical
Publication of JP4989571B2 publication Critical patent/JP4989571B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Silicon Compounds (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
JP2008173910A 2008-07-02 2008-07-02 多孔質膜の前駆体組成物の溶液 Active JP4989571B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008173910A JP4989571B2 (ja) 2008-07-02 2008-07-02 多孔質膜の前駆体組成物の溶液

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008173910A JP4989571B2 (ja) 2008-07-02 2008-07-02 多孔質膜の前駆体組成物の溶液

Publications (3)

Publication Number Publication Date
JP2010016130A JP2010016130A (ja) 2010-01-21
JP2010016130A5 JP2010016130A5 (enExample) 2011-05-26
JP4989571B2 true JP4989571B2 (ja) 2012-08-01

Family

ID=41701979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008173910A Active JP4989571B2 (ja) 2008-07-02 2008-07-02 多孔質膜の前駆体組成物の溶液

Country Status (1)

Country Link
JP (1) JP4989571B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101977927B1 (ko) 2012-07-11 2019-05-13 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 광전소자 및 그 제조방법
JP6187115B2 (ja) * 2013-10-04 2017-08-30 三菱ケミカル株式会社 シリカ多孔質膜

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3403402B2 (ja) * 1990-01-25 2003-05-06 モービル・オイル・コーポレイション 合成多孔質結晶性物質、それの合成および用途
JP2002173641A (ja) * 2000-09-29 2002-06-21 Asahi Kasei Corp 絶縁薄膜用の多孔性シリカ薄膜
US7307343B2 (en) * 2002-05-30 2007-12-11 Air Products And Chemicals, Inc. Low dielectric materials and methods for making same
JP4447846B2 (ja) * 2003-02-28 2010-04-07 宇部日東化成株式会社 多孔質シリカ系薄膜の製造方法
JP4279064B2 (ja) * 2003-06-27 2009-06-17 三菱化学株式会社 多孔性シリカ膜、それを有する積層体
JP5030478B2 (ja) * 2006-06-02 2012-09-19 株式会社アルバック 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置

Also Published As

Publication number Publication date
JP2010016130A (ja) 2010-01-21

Similar Documents

Publication Publication Date Title
KR101105622B1 (ko) 다공질막의 전구체 조성물 및 그 조제 방법, 다공질막 및 그 제조 방법, 그리고 반도체 장치
US8212338B2 (en) Manufacturing method of semiconductor device and semiconductor device produced therewith
JP4598876B2 (ja) 組成物の製造方法、多孔質材料及びその形成方法、層間絶縁膜、半導体材料、半導体装置、並びに低屈折率表面保護膜
JP5172567B2 (ja) 膜形成用組成物、絶縁膜、半導体装置およびその製造方法
EP1547975B1 (en) Method for modifying porous film, modified porous film and use of same
JP2006229201A (ja) 低誘電率材料及びその製造方法
US8288295B2 (en) Manufacturing method of semiconductor device and semiconductor device produced therewith
WO2005082976A1 (ja) ポリマーおよびその製造方法、絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法
JP4894153B2 (ja) 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置
CN101238556B (zh) 多孔质二氧化硅的制造方法及制造装置
JP4616154B2 (ja) 半導体装置の製造方法
JP2010267716A (ja) 低誘電率絶縁膜の作製方法、半導体装置およびその製造方法
JP4989571B2 (ja) 多孔質膜の前駆体組成物の溶液
WO2003099915A1 (en) Porous nanocomposite thin film and method of forming the same
JP2003115482A (ja) 絶縁膜形成用組成物
JP4422643B2 (ja) 多孔質フィルムの製造方法ならびに層間絶縁膜、半導体材料および半導体装置
JP2004067435A (ja) 絶縁性薄膜製造用塗布組成物
JP2005116830A (ja) 多孔質シリカの製造方法、多孔質シリカおよびその用途
JP2011040634A (ja) 多孔質膜の前駆体組成物、多孔質膜及びその作製方法、並びに半導体装置
HK1117187B (en) Precursor composition for porous membrane and process for preparation thereof, porous membrane and process for production thereof, and semiconductor device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110405

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110405

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120118

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120319

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120411

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120427

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4989571

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150511

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250