JP4986351B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4986351B2
JP4986351B2 JP2001265021A JP2001265021A JP4986351B2 JP 4986351 B2 JP4986351 B2 JP 4986351B2 JP 2001265021 A JP2001265021 A JP 2001265021A JP 2001265021 A JP2001265021 A JP 2001265021A JP 4986351 B2 JP4986351 B2 JP 4986351B2
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JP
Japan
Prior art keywords
film
insulating film
wiring
substrate
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001265021A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002189429A (ja
JP2002189429A5 (enrdf_load_stackoverflow
Inventor
達也 荒尾
敦生 磯部
徹 高山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001265021A priority Critical patent/JP4986351B2/ja
Publication of JP2002189429A publication Critical patent/JP2002189429A/ja
Publication of JP2002189429A5 publication Critical patent/JP2002189429A5/ja
Application granted granted Critical
Publication of JP4986351B2 publication Critical patent/JP4986351B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2001265021A 2000-09-06 2001-08-31 半導体装置 Expired - Fee Related JP4986351B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001265021A JP4986351B2 (ja) 2000-09-06 2001-08-31 半導体装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-269797 2000-09-06
JP2000269797 2000-09-06
JP2000269797 2000-09-06
JP2001265021A JP4986351B2 (ja) 2000-09-06 2001-08-31 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011223526A Division JP5542261B2 (ja) 2000-09-06 2011-10-10 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002189429A JP2002189429A (ja) 2002-07-05
JP2002189429A5 JP2002189429A5 (enrdf_load_stackoverflow) 2008-08-28
JP4986351B2 true JP4986351B2 (ja) 2012-07-25

Family

ID=26599332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001265021A Expired - Fee Related JP4986351B2 (ja) 2000-09-06 2001-08-31 半導体装置

Country Status (1)

Country Link
JP (1) JP4986351B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4182022B2 (ja) * 2004-04-01 2008-11-19 キヤノン株式会社 表示装置用パネル及び表示装置
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
JP4930704B2 (ja) 2006-03-14 2012-05-16 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置及び電子機器
US7435633B2 (en) 2006-03-14 2008-10-14 Seiko Epson Corporation Electroluminescence device, manufacturing method thereof, and electronic apparatus
KR101499233B1 (ko) 2008-09-03 2015-03-06 삼성디스플레이 주식회사 유기 발광 표시 장치
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0225A (ja) * 1989-04-28 1990-01-05 Canon Inc 駆動装置
JP2667304B2 (ja) * 1991-05-13 1997-10-27 シャープ株式会社 アクティブマトリクス基板
JPH0545640A (ja) * 1991-08-09 1993-02-26 Ricoh Co Ltd 液晶表示装置
JPH06347826A (ja) * 1993-06-07 1994-12-22 Sanyo Electric Co Ltd 液晶表示装置
JPH08152612A (ja) * 1994-11-30 1996-06-11 Sanyo Electric Co Ltd 液晶表示装置
JP3469663B2 (ja) * 1994-12-09 2003-11-25 三洋電機株式会社 液晶表示装置
JPH09179106A (ja) * 1995-12-21 1997-07-11 Dainippon Printing Co Ltd 薄型ディスプレイ用基板とこれを使用したフィルム液晶ディスプレイおよびフィールドエミッションディスプレイ
JPH09197437A (ja) * 1996-01-24 1997-07-31 Toshiba Corp 液晶表示装置及びその製造方法
KR100234376B1 (ko) * 1996-04-09 1999-12-15 윤종용 박막 트랜지스터의 제조방법 및 이를 이용한 액정 표시장치의 제조방법
JP3708637B2 (ja) * 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
JPH1096949A (ja) * 1996-09-24 1998-04-14 Toshiba Electron Eng Corp アクティブマトリクス型液晶表示装置
JPH1138439A (ja) * 1997-07-16 1999-02-12 Toshiba Corp アクティブマトリクス基板及びその製造方法並びにアクティブマトリクス型液晶表示装置
JP3127894B2 (ja) * 1998-07-24 2001-01-29 日本電気株式会社 アクティブマトリクス型液晶表示装置

Also Published As

Publication number Publication date
JP2002189429A (ja) 2002-07-05

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