JP4980568B2 - 放出電磁放射により基板の温度をその場でモニタリングする方法および装置 - Google Patents

放出電磁放射により基板の温度をその場でモニタリングする方法および装置

Info

Publication number
JP4980568B2
JP4980568B2 JP2004528142A JP2004528142A JP4980568B2 JP 4980568 B2 JP4980568 B2 JP 4980568B2 JP 2004528142 A JP2004528142 A JP 2004528142A JP 2004528142 A JP2004528142 A JP 2004528142A JP 4980568 B2 JP4980568 B2 JP 4980568B2
Authority
JP
Japan
Prior art keywords
substrate
plasma
temperature
radiation
electromagnetic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004528142A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005536049A (ja
Inventor
マグニ，エンリコ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2005536049A publication Critical patent/JP2005536049A/ja
Application granted granted Critical
Publication of JP4980568B2 publication Critical patent/JP4980568B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Radiation Pyrometers (AREA)
  • Plasma Technology (AREA)
JP2004528142A 2002-08-13 2003-08-13 放出電磁放射により基板の温度をその場でモニタリングする方法および装置 Expired - Fee Related JP4980568B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40297802P 2002-08-13 2002-08-13
US60/402,978 2002-08-13
PCT/US2003/025524 WO2004015157A2 (fr) 2002-08-13 2003-08-13 Procedes et appareil permettant un controle in situ de la temperature d'un substrat par l'emission d'un rayonnement electromagnetique

Publications (2)

Publication Number Publication Date
JP2005536049A JP2005536049A (ja) 2005-11-24
JP4980568B2 true JP4980568B2 (ja) 2012-07-18

Family

ID=31715916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004528142A Expired - Fee Related JP4980568B2 (ja) 2002-08-13 2003-08-13 放出電磁放射により基板の温度をその場でモニタリングする方法および装置

Country Status (6)

Country Link
JP (1) JP4980568B2 (fr)
KR (1) KR20050050079A (fr)
CN (1) CN1675406B (fr)
AU (1) AU2003262685A1 (fr)
TW (1) TWI320951B (fr)
WO (1) WO2004015157A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7341673B2 (en) 2003-08-12 2008-03-11 Lam Research Corporation Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission
JP2007134601A (ja) * 2005-11-11 2007-05-31 Horiba Ltd シリコンウエハの温度測定方法及び温度測定用放射温度計
DE102006009460A1 (de) * 2006-03-01 2007-09-06 Infineon Technologies Ag Prozessgerät und Verfahren zur Bestimmung der Temperatur eines Substrats in dem Prozessgerät
US7651269B2 (en) * 2007-07-19 2010-01-26 Lam Research Corporation Temperature probes having a thermally isolated tip
CN102313599B (zh) * 2010-06-29 2013-04-24 北京北方微电子基地设备工艺研究中心有限责任公司 耦合窗的温度测量装置、等离子体设备及温度测量方法
US10373794B2 (en) * 2015-10-29 2019-08-06 Lam Research Corporation Systems and methods for filtering radio frequencies from a signal of a thermocouple and controlling a temperature of an electrode in a plasma chamber
CN105841844B (zh) * 2016-03-24 2018-07-24 中国科学院上海微系统与信息技术研究所 一种分子束外延中标定衬底表面实际温度的方法
CN109280899A (zh) * 2018-11-27 2019-01-29 上海卫星装备研究所 一种真空镀膜过程中基体温升的表征方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959244A (en) * 1989-03-27 1990-09-25 General Electric Company Temperature measurement and control for photohermal processes
JPH03250642A (ja) * 1989-12-06 1991-11-08 Hitachi Ltd 赤外線温度計測装置
JP3093239B2 (ja) * 1990-05-22 2000-10-03 東京エレクトロン株式会社 半導体ウェハの熱処理装置及び熱処理方法
JPH0493730A (ja) * 1990-08-09 1992-03-26 Sharp Corp 温度測定装置
JPH0691144B2 (ja) * 1990-09-21 1994-11-14 株式会社日立製作所 ウエハ温度測定用の放射温度計およびウエハ温度測定方法
US5564830A (en) * 1993-06-03 1996-10-15 Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Method and arrangement for determining the layer-thickness and the substrate temperature during coating
US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
GB9411153D0 (en) * 1994-06-03 1994-07-27 Land Infrared Ltd Temperature monitoring
EP1124255A3 (fr) * 1999-04-05 2001-10-17 Applied Materials, Inc. Procédé de gravure dans la fabrication de dispositifs électroniques
US6328802B1 (en) * 1999-09-14 2001-12-11 Lsi Logic Corporation Method and apparatus for determining temperature of a semiconductor wafer during fabrication thereof
JP2001093882A (ja) * 1999-09-22 2001-04-06 Ulvac Japan Ltd 温度測定装置、及びその温度測定装置が設けられた真空処理装置
JP2001153728A (ja) * 1999-11-30 2001-06-08 Toppan Printing Co Ltd フィルムの温度測定方法及びその測定系を搭載した成膜装置及び成膜方法
US6352870B1 (en) * 2000-06-12 2002-03-05 Advanced Micro Devices, Inc. Method of endpointing plasma strip process by measuring wafer temperature

Also Published As

Publication number Publication date
WO2004015157A3 (fr) 2004-04-01
CN1675406B (zh) 2010-05-12
AU2003262685A1 (en) 2004-02-25
WO2004015157A2 (fr) 2004-02-19
CN1675406A (zh) 2005-09-28
KR20050050079A (ko) 2005-05-27
AU2003262685A8 (en) 2004-02-25
TW200407999A (en) 2004-05-16
JP2005536049A (ja) 2005-11-24
TWI320951B (en) 2010-02-21

Similar Documents

Publication Publication Date Title
US9945736B2 (en) Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission
US5200023A (en) Infrared thermographic method and apparatus for etch process monitoring and control
JP6033453B2 (ja) 多変量解析を用いたプラズマエンドポイント検出
US7989364B2 (en) Plasma oxidation processing method
US6976782B1 (en) Methods and apparatus for in situ substrate temperature monitoring
JPH1031039A (ja) 計測装置および計測方法
TW200842332A (en) Substrate temperature measurement by infrared transmission
JP4980568B2 (ja) 放出電磁放射により基板の温度をその場でモニタリングする方法および装置
US20190287825A1 (en) Plasma processing method and plasma processing apparatus
US20050127192A1 (en) Endpoint detector for a substrate manufacturing process
JP2013057660A (ja) 独立光源を用いたウェハ温度測定のための方法及び装置
US9412565B2 (en) Temperature measuring method and plasma processing system
US7445726B2 (en) Photoresist trimming process
JPS6358913B2 (fr)
JP7389938B1 (ja) 温度検出装置および半導体処理装置
JPH09181050A (ja) プラズマ処理装置およびプラズマ処理方法
JPH05251397A (ja) 基板温度の測定方法
JP2002110635A (ja) プラズマ処理装置
Patel et al. Application of thermal imaging methodology for plasma etching diagnosis
JP2001085489A (ja) 温度測定方法
JPH06208973A (ja) ドライエッチング装置及びその方法
JPWO2005029020A1 (ja) 基板処理装置およびデバイスの製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060719

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20091124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101005

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101224

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110614

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110912

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110920

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20111011

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20111018

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20111111

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20111118

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120327

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120419

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150427

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4980568

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees